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Class Information
Number: 257/E21.041
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo)
Description: This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/04D.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.044 Changing their shape, e.g., forming recess (epo) 9
257/E21.045 Making electrode (epo) 10
257/E21.042 Making n- or p-doped regions (epo) 53
257/E21.049 Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (epo) 35

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8685843 Direct growth of graphene on substrates Apr. 1, 2014
8664642 Nonplanar graphite-based devices having multiple bandgaps Mar. 4, 2014
8648354 Electronic field effect devices and methods for their manufacture Feb. 11, 2014
8580658 Methods for fabricating graphene device topography and devices formed therefrom Nov. 12, 2013
8581262 Electronic devices comprising multi cyclic hydrocarbons Nov. 12, 2013
8487356 Graphene device and method of manufacturing the same Jul. 16, 2013
8481412 Method of and apparatus for active energy assist baking Jul. 9, 2013
8409366 Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof Apr. 2, 2013
8362492 Electronic field effect devices and methods for their manufacture Jan. 29, 2013
8338316 Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants Dec. 25, 2012
8299581 Passivation layer extension to chip edge Oct. 30, 2012
8273642 Method of fabricating an NMOS transistor Sep. 25, 2012
8193538 Electronic field effect devices Jun. 5, 2012
8158455 Boron-doped diamond semiconductor Apr. 17, 2012
8154084 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material Apr. 10, 2012
8119466 Self-aligned process for nanotube/nanowire FETs Feb. 21, 2012
8105861 CMOS image sensor with reduced dark current Jan. 31, 2012
8101980 Graphene device and method of manufacturing the same Jan. 24, 2012
8058085 Method of forming a waveguide in diamond Nov. 15, 2011
8039301 Gate after diamond transistor Oct. 18, 2011
8008669 Programmable anti-fuse structure with DLC dielectric layer Aug. 30, 2011
7968473 Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants Jun. 28, 2011
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7923377 Method for forming amorphous carbon film Apr. 12, 2011
7915617 Semiconductor device Mar. 29, 2011
7851288 Field effect transistor using carbon based stress liner Dec. 14, 2010
7846767 Semiconductor-on-diamond devices and associated methods Dec. 7, 2010
7795070 Semiconductor device including an amorphous nitrided silicon adhesion layer and method of manufacture therefor Sep. 14, 2010
7768091 Diamond ultraviolet sensor Aug. 3, 2010
7727838 Method to improve transistor Tox using high-angle implants with no additional masks Jun. 1, 2010
7727798 Method for production of diamond-like carbon film having semiconducting property Jun. 1, 2010
7723180 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same May. 25, 2010
7695564 Thermal management substrate Apr. 13, 2010
7635631 Semiconductor device and manufacturing method for the same Dec. 22, 2009
7608476 Electronic device Oct. 27, 2009
7557378 Boron aluminum nitride diamond heterostructure Jul. 7, 2009
7553693 Method for making a field effect transistor with diamond-like carbon channel and resulting transistor Jun. 30, 2009
7541234 Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas Jun. 2, 2009
7394103 All diamond self-aligned thin film transistor Jul. 1, 2008
7393707 Method for manufacturing an electro-optical device Jul. 1, 2008
7390695 Diamond substrate and manufacturing method thereof Jun. 24, 2008
7348620 Forming phase change memories Mar. 25, 2008
7327000 Patterned thin film graphite devices and method for making same Feb. 5, 2008
7300861 Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer Nov. 27, 2007
7288420 Method for manufacturing an electro-optical device Oct. 30, 2007
6913999 Semiconductor device with components embedded in backside diamond layer Jul. 5, 2005
6841485 Method of manufacturing semiconductor device and manufacturing line thereof Jan. 11, 2005
6815721 Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor Nov. 9, 2004
6676487 Method for polishing surface of vapor-phase synthesized thin diamond film Jan. 13, 2004
6649937 Semiconductor device with components embedded in backside diamond layer Nov. 18, 2003

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