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Class Information
Number: 257/E21.04
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo)
Description: This subclass is indented under subclass E21.002. This subclass is substantially the same in scope as ECLA classification H01L21/04.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.041 Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (epo) 26
257/E21.054 Device having semiconductor body comprising silicon carbide (sic) (epo) 101
257/E21.068 Device having semiconductor body comprising selenium (se) or tellurium (te) (epo) 16
257/E21.078 Device having semiconductor body comprising cuprous oxide (cu 2 o) or cuprous iodide (cui) (epo) 3
257/E21.085 Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) 20
257/E21.459 Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) 8
257/E21.499 Assembling semiconductor devices, e.g., packaging , including mounting, encapsulating, or treatment of packaged semiconductor (epo) 582


Patents under this class:

Patent Number Title Of Patent Date Issued
7622351 Method of manufacturing semiconductor device and semiconductor device Nov. 24, 2009
7619265 Molecular single electron transistor (MSET) detector device Nov. 17, 2009
7588953 Method of fabricating porous aluminum oxide mold having sub-micron structure and methods of imprinting to make LEDS using the mold Sep. 15, 2009
7528047 Self-aligned split gate memory cell and method of forming May. 5, 2009
7510938 Semiconductor superjunction structure Mar. 31, 2009
7510900 Methods of forming a double pinned photodiode Mar. 31, 2009
7482068 Lightly doped silicon carbide wafer and use thereof in high power devices Jan. 27, 2009
7439175 Method for fabricating a thin film and metal line of semiconductor device Oct. 21, 2008
7432193 Method for fabricating a thin film and a metal line of a semiconductor device Oct. 7, 2008
7348226 Method of forming lattice-matched structure on silicon and structure formed thereby Mar. 25, 2008
7339249 Semiconductor device Mar. 4, 2008
7294526 Nano optical sensors via molecular self-assembly Nov. 13, 2007
7214575 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors May. 8, 2007
7205662 Dielectric barrier layer films Apr. 17, 2007
7190016 Capacitor structure Mar. 13, 2007
7179696 Phosphorus activated NMOS using SiC process Feb. 20, 2007
7161220 High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same Jan. 9, 2007
7129580 Methods and procedures for engineering of composite conductive films by atomic layer deposition Oct. 31, 2006
7026704 Semiconductor device for reducing plasma charging damage Apr. 11, 2006
6773976 Semiconductor device and method for manufacturing the same Aug. 10, 2004
5543335 Advanced power device process for low drop Aug. 6, 1996



 
 
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