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Class Information
Number: 257/E21.037
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising inorganic layer (epo) > Characterized by their size, orientation, disposition, behavior, shape, in horizontal or vertical plane (epo) > Characterized by their behavior during process, e.g., soluble mask, re-deposited mask (epo)
Description: This subclass is indented under subclass E21.036. This subclass is substantially the same in scope as ECLA classification H01L21/033F2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7309659 |
Silicon-containing resist to pattern organic low k-dielectrics |
Dec. 18, 2007 |
| 7297559 |
Method of fabricating memory and memory |
Nov. 20, 2007 |
| 7033948 |
Method for reducing dimensions between patterns on a photoresist |
Apr. 25, 2006 |
| 7018931 |
Method of forming an isolation film in a semiconductor device |
Mar. 28, 2006 |
| 6919259 |
Method for STI etching using endpoint detection |
Jul. 19, 2005 |
| 6864188 |
Semiconductor configuration and process for etching a layer of the semiconductor configuration using a silicon-containing etching mask |
Mar. 8, 2005 |
| 6852637 |
Method of etching a mask layer and a protecting layer for metal contact windows |
Feb. 8, 2005 |
| 6750150 |
Method for reducing dimensions between patterns on a photoresist |
Jun. 15, 2004 |
| 6730609 |
Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device |
May. 4, 2004 |
| 6653058 |
Methods for reducing profile variation in photoresist trimming |
Nov. 25, 2003 |
| 6573188 |
End point detection method for forming a patterned silicon layer |
Jun. 3, 2003 |
| 6458494 |
Etching method |
Oct. 1, 2002 |
| 6426300 |
Method for fabricating semiconductor device by using etching polymer |
Jul. 30, 2002 |
| 6387774 |
Methods for forming patterned layers including notched etching masks |
May. 14, 2002 |
| 6319822 |
Process for forming an integrated contact or via |
Nov. 20, 2001 |
| 6316169 |
Methods for reducing profile variation in photoresist trimming |
Nov. 13, 2001 |
| 6265317 |
Top corner rounding for shallow trench isolation |
Jul. 24, 2001 |
| 6258732 |
Method of forming a patterned organic dielectric layer on a substrate |
Jul. 10, 2001 |
| 6210595 |
Method for producing structures having a high aspect ratio and structure having a high aspect ratio |
Apr. 3, 2001 |
| 6139647 |
Selective removal of vertical portions of a film |
Oct. 31, 2000 |
| 5877071 |
Masking methods during semiconductor device fabrication |
Mar. 2, 1999 |
| 5767017 |
Selective removal of vertical portions of a film |
Jun. 16, 1998 |
| 5759880 |
Resistless methods of fabricating FETs |
Jun. 2, 1998 |
| 5670062 |
Method for producing tapered lines |
Sep. 23, 1997 |
| 5472895 |
Method for manufacturing a transistor of a semiconductor device |
Dec. 5, 1995 |
| 5330617 |
Method for etching integrated-circuit layers to a fixed depth and corresponding integrated circuit |
Jul. 19, 1994 |
| 4889828 |
Process for the production of electrical isolation zones in a CMOS integrated circuit |
Dec. 26, 1989 |
| 4597826 |
Method for forming patterns |
Jul. 1, 1986 |
| 4577394 |
Reduction of field oxide encroachment in MOS fabrication |
Mar. 25, 1986 |
| 4352724 |
Method of manufacturing a semiconductor device |
Oct. 5, 1982 |
| 4092210 |
Process for the production of etched structures in a surface of a solid body by ionic etching |
May. 30, 1978 |
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