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Class Information
Number: 257/E21.035
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising inorganic layer (epo) > Characterized by their composition, e.g., multilayer masks, materials (epo)
Description: This subclass is indented under subclass E21.033. This subclass is substantially the same in scope as ECLA classification H01L21/033D.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7452825 |
Method of forming a mask structure and method of forming a minute pattern using the same |
Nov. 18, 2008 |
| 7439196 |
Method for manufacturing pattern formed structure |
Oct. 21, 2008 |
| 7381654 |
Method for fabricating right-angle holes in a substrate |
Jun. 3, 2008 |
| 7378738 |
Method for producing self-aligned mask, articles produced by same and composition for same |
May. 27, 2008 |
| 7368390 |
Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process |
May. 6, 2008 |
| 7364925 |
Organic light emitting device having a protective barrier |
Apr. 29, 2008 |
| 7309659 |
Silicon-containing resist to pattern organic low k-dielectrics |
Dec. 18, 2007 |
| 7138338 |
Method and composite hard mask for forming deep trenches in a semiconductor substrate |
Nov. 21, 2006 |
| 7138341 |
Process for making a memory structure |
Nov. 21, 2006 |
| 7064078 |
Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
Jun. 20, 2006 |
| 7060635 |
Method of manufacturing semiconductor device and method of forming pattern |
Jun. 13, 2006 |
| 7056446 |
Method of manufacturing nano-gap electrode |
Jun. 6, 2006 |
| 7056830 |
Method for plasma etching a dielectric layer |
Jun. 6, 2006 |
| 7052621 |
Bilayered metal hardmasks for use in Dual Damascene etch schemes |
May. 30, 2006 |
| 7049052 |
Method providing an improved bi-layer photoresist pattern |
May. 23, 2006 |
| 7033936 |
Process for making island arrays |
Apr. 25, 2006 |
| 7033948 |
Method for reducing dimensions between patterns on a photoresist |
Apr. 25, 2006 |
| 7029753 |
Multi-layer hard mask structure for etching deep trench in substrate |
Apr. 18, 2006 |
| 7026253 |
Method for fabricating semiconductor device using ArF photolithography capable of protecting tapered profile of hard mask |
Apr. 11, 2006 |
| 7026247 |
Nanocircuit and self-correcting etching method for fabricating same |
Apr. 11, 2006 |
| 7014959 |
CD uniformity of chrome etch to photomask process |
Mar. 21, 2006 |
| 7014958 |
Method for dry etching photomask material |
Mar. 21, 2006 |
| 7001692 |
Method of forming a mask having nitride film |
Feb. 21, 2006 |
| 6998348 |
Method for manufacturing electronic circuits integrated on a semiconductor substrate |
Feb. 14, 2006 |
| 6984436 |
Graded material and method for synthesis thereof and method for processing thereof |
Jan. 10, 2006 |
| 6967146 |
Isolation region forming methods |
Nov. 22, 2005 |
| 6964929 |
Method of forming a narrow gate, and product produced thereby |
Nov. 15, 2005 |
| 6958295 |
Method for using a hard mask for critical dimension growth containment |
Oct. 25, 2005 |
| 6951820 |
Method for using a hard mask for critical dimension growth containment |
Oct. 4, 2005 |
| 6939808 |
Undoped and fluorinated amorphous carbon film as pattern mask for metal etch |
Sep. 6, 2005 |
| 6939794 |
Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
Sep. 6, 2005 |
| 6936539 |
Antireflective coating for use during the manufacture of a semiconductor device |
Aug. 30, 2005 |
| 6913958 |
Method for patterning a feature using a trimmed hardmask |
Jul. 5, 2005 |
| 6902939 |
Integrated circuit and method |
Jun. 7, 2005 |
| 6903392 |
Semiconductor device and its manufacturing method |
Jun. 7, 2005 |
| 6900123 |
BARC etch comprising a selective etch chemistry and a high polymerizing gas for CD control |
May. 31, 2005 |
| 6897120 |
Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate |
May. 24, 2005 |
| 6893954 |
Method for patterning a semiconductor wafer |
May. 17, 2005 |
| 6884733 |
Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation |
Apr. 26, 2005 |
| 6878619 |
Method for fabricating semiconductor device |
Apr. 12, 2005 |
| 6878635 |
Dry etching |
Apr. 12, 2005 |
| 6875664 |
Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material |
Apr. 5, 2005 |
| 6872666 |
Method for making a dual damascene interconnect using a dual hard mask |
Mar. 29, 2005 |
| 6864556 |
CVD organic polymer film for advanced gate patterning |
Mar. 8, 2005 |
| 6864188 |
Semiconductor configuration and process for etching a layer of the semiconductor configuration using a silicon-containing etching mask |
Mar. 8, 2005 |
| 6855627 |
Method of using amorphous carbon to prevent resist poisoning |
Feb. 15, 2005 |
| 6838300 |
Chemical treatment of low-k dielectric films |
Jan. 4, 2005 |
| 6835663 |
Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity |
Dec. 28, 2004 |
| 6835670 |
Method of manufacturing semiconductor device |
Dec. 28, 2004 |
| 6831013 |
Method of forming a dual damascene via by using a metal hard mask layer |
Dec. 14, 2004 |
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