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Class Information
Number: 257/E21.03
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Electro-lithographic process (epo)
Description: This subclass is indented under subclass E21.026. This subclass is substantially the same in scope as ECLA classification H01L21/027B6C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7296245 |
Combined e-beam and optical exposure semiconductor lithography |
Nov. 13, 2007 |
| 7202095 |
Method for measuring silicide proportion, method for measuring annealing temperature, method for fabricating semiconductor device and x-ray photo receiver |
Apr. 10, 2007 |
| 7026099 |
Pattern forming method and method for manufacturing semiconductor device |
Apr. 11, 2006 |
| 6989333 |
Process for forming a pattern |
Jan. 24, 2006 |
| 6972165 |
Electron beam exposure mask and electron beam exposure method using the same |
Dec. 6, 2005 |
| 6897157 |
Method of repairing an opaque defect on a mask with electron beam-induced chemical etching |
May. 24, 2005 |
| 6875624 |
Combined E-beam and optical exposure semiconductor lithography |
Apr. 5, 2005 |
| 6861376 |
Photoresist scum free process for via first dual damascene process |
Mar. 1, 2005 |
| 6855646 |
Plasma polymerized electron beam resist |
Feb. 15, 2005 |
| 6727179 |
Method for creating an integrated circuit stage wherein fine and large patterns coexist |
Apr. 27, 2004 |
| 6436810 |
Bi-layer resist process for dual damascene |
Aug. 20, 2002 |
| 6319566 |
Method of molecular-scale pattern imprinting at surfaces |
Nov. 20, 2001 |
| 6239008 |
Method of making a density multiplier for semiconductor device manufacturing |
May. 29, 2001 |
| 6174801 |
E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal line |
Jan. 16, 2001 |
| 6156393 |
Method of molecular-scale pattern imprinting at surfaces |
Dec. 5, 2000 |
| 6153499 |
Method of manufacturing semiconductor device |
Nov. 28, 2000 |
| 6150070 |
Method of creating optimal profile in single layer photoresist |
Nov. 21, 2000 |
| 6127272 |
Method of electron beam lithography on very high resistivity substrates |
Oct. 3, 2000 |
| 5876901 |
Method for fabricating semiconductor device |
Mar. 2, 1999 |
| 5837423 |
Semiconductor IC device fabricating method |
Nov. 17, 1998 |
| 5776820 |
Method of forming a high-frequency transistor T gate electrode |
Jul. 7, 1998 |
| 5770336 |
Lithography mask and fabrication method thereof |
Jun. 23, 1998 |
| 5702620 |
Ultrafine pattern forming method and ultrafine etching method using calixarene derivative as negative resist |
Dec. 30, 1997 |
| 5693548 |
Method for making T-gate of field effect transistor |
Dec. 2, 1997 |
| 5641715 |
Semiconductor IC device fabricating method |
Jun. 24, 1997 |
| 5539222 |
High yield sub-micron gate FETs |
Jul. 23, 1996 |
| 5468595 |
Method for three-dimensional control of solubility properties of resist layers |
Nov. 21, 1995 |
| 5432119 |
High yield electron-beam gate fabrication method for sub-micron gate FETS |
Jul. 11, 1995 |
| 5350485 |
High-resolution lithography and semiconductor device manufacturing method |
Sep. 27, 1994 |
| 5166888 |
Fabrication of particle beam masks |
Nov. 24, 1992 |
| 5102688 |
Fine pattern forming process |
Apr. 7, 1992 |
| 5091047 |
Plasma etching using a bilayer mask |
Feb. 25, 1992 |
| 5045150 |
Plasma etching using a bilayer mask |
Sep. 3, 1991 |
| 4810617 |
Treatment of planarizing layer in multilayer electron beam resist |
Mar. 7, 1989 |
| 4748132 |
Micro fabrication process for semiconductor structure using coherent electron beams |
May. 31, 1988 |
| 4702993 |
Treatment of planarizing layer in multilayer electron beam resist |
Oct. 27, 1987 |
| 4642672 |
Semiconductor device having registration mark for electron beam exposure |
Feb. 10, 1987 |
| 4603473 |
Method of fabricating integrated semiconductor circuit |
Aug. 5, 1986 |
| 4595649 |
Glassy TiO.sub.2 polymer films as electron beam charge dissipation layers |
Jun. 17, 1986 |
| 4578343 |
Method for producing field effect type semiconductor device |
Mar. 25, 1986 |
| 4557995 |
Method of making submicron circuit structures |
Dec. 10, 1985 |
| 4489241 |
Exposure method with electron beam exposure apparatus |
Dec. 18, 1984 |
| 4487795 |
Method of forming patterned conductor lines |
Dec. 11, 1984 |
| 4458129 |
Discharge device and method for use in processing semiconductor devices |
Jul. 3, 1984 |
| 4451738 |
Microcircuit fabrication |
May. 29, 1984 |
| 4394182 |
Microelectronic shadow masking process for reducing punchthrough |
Jul. 19, 1983 |
| 4350866 |
Discharge device and method for use in processing semiconductor devices |
Sep. 21, 1982 |
| 4348804 |
Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation |
Sep. 14, 1982 |
| 4323638 |
Reducing charging effects in charged-particle-beam lithography |
Apr. 6, 1982 |
| 4322626 |
Method of electron beam exposure |
Mar. 30, 1982 |
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