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Class Information
Number: 257/E21.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Photolith ographic process (epo) > Using anti-reflective coating (epo)
Description: This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5110697 |
Multifunctional photolithographic compositions |
May. 5, 1992 |
| 5106786 |
Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide |
Apr. 21, 1992 |
| 5102830 |
Integrated circuit fabrication process for preventing overprocessing during a laser scan |
Apr. 7, 1992 |
| 5100503 |
Silica-based anti-reflective planarizing layer |
Mar. 31, 1992 |
| 5066615 |
Photolithographic processes using thin coatings of refractory metal silicon nitrides as antireflection layers |
Nov. 19, 1991 |
| 5034348 |
Process for forming refractory metal silicide layers of different thicknesses in an integrated circuit |
Jul. 23, 1991 |
| 4970099 |
Perfluoropolymer coated pellicles |
Nov. 13, 1990 |
| 4948702 |
Photosensitive recording element |
Aug. 14, 1990 |
| 4942451 |
Semiconductor device having improved antireflection coating |
Jul. 17, 1990 |
| 4933294 |
Method of detecting truncated epidermal growth factor receptors |
Jun. 12, 1990 |
| 4933304 |
Method for reducing the surface reflectance of a metal layer during semiconductor processing |
Jun. 12, 1990 |
| 4910122 |
Anti-reflective coating |
Mar. 20, 1990 |
| 4876165 |
Light filters for microelectronics |
Oct. 24, 1989 |
| 4855199 |
Photopatterned product of silicone polyamic acid on a transparent substrate |
Aug. 8, 1989 |
| 4782009 |
Method of coating and imaging photopatternable silicone polyamic acid |
Nov. 1, 1988 |
| 4778739 |
Photoresist process for reactive ion etching of metal patterns for semiconductor devices |
Oct. 18, 1988 |
| 4745045 |
Method for improving resolution in microelectronic circuits using photoresist overlayer by using thermally processed polyimide underlayer formed from positive photoresist and polyamic acid |
May. 17, 1988 |
| 4719166 |
Positive-working photoresist elements containing anti-reflective butadienyl dyes which are thermally stable at temperatures of at least 200.degree. C. |
Jan. 12, 1988 |
| 4714668 |
Method for patterning layer having high reflectance using photosensitive material |
Dec. 22, 1987 |
| 4620986 |
MOS rear end processing |
Nov. 4, 1986 |
| 4587138 |
MOS rear end processing |
May. 6, 1986 |
| 4557797 |
Resist process using anti-reflective coating |
Dec. 10, 1985 |
| 4540688 |
.beta.-Lactam antibiotics |
Sep. 10, 1985 |
| 4529681 |
Light- and heat-sensitive recording material |
Jul. 16, 1985 |
| 4529685 |
Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating |
Jul. 16, 1985 |
| 4403827 |
Process for producing a diffraction grating |
Sep. 13, 1983 |
| 4321104 |
Photoetching method |
Mar. 23, 1982 |
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