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Class Information
Number: 257/E21.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Photolith ographic process (epo) > Using anti-reflective coating (epo)
Description: This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5753418 |
0.3 Micron aperture width patterning process |
May. 19, 1998 |
| 5750442 |
Germanium as an antireflective coating and method of use |
May. 12, 1998 |
| 5747388 |
Antireflection layer and process for lithographically structuring a layer |
May. 5, 1998 |
| 5741626 |
Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
Apr. 21, 1998 |
| 5733713 |
Method of manufacturing semiconductor device |
Mar. 31, 1998 |
| 5712194 |
Semiconductor device including interlayer dielectric film layers and conductive film layers |
Jan. 27, 1998 |
| 5710067 |
Silicon oxime film |
Jan. 20, 1998 |
| 5707883 |
Method for manufacturing a semiconductor device using antireflection coating |
Jan. 13, 1998 |
| 5700737 |
PECVD silicon nitride for etch stop mask and ozone TEOS pattern sensitivity elimination |
Dec. 23, 1997 |
| 5698352 |
Semiconductor device containing Si, O and N anti-reflective layer |
Dec. 16, 1997 |
| 5688365 |
Method of making semiconductor device |
Nov. 18, 1997 |
| 5677111 |
Process for production of micropattern utilizing antireflection film |
Oct. 14, 1997 |
| 5674356 |
Method for forming a semiconductor device in which an anti reflective layer is formed by varying the composition thereof |
Oct. 7, 1997 |
| 5672243 |
Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide |
Sep. 30, 1997 |
| 5670297 |
Process for the formation of a metal pattern |
Sep. 23, 1997 |
| 5670298 |
Method of forming a metal pattern in manufacturing a semiconductor device |
Sep. 23, 1997 |
| 5656128 |
Reduction of reflection by amorphous carbon |
Aug. 12, 1997 |
| 5648202 |
Method of forming a photoresist pattern using an anti-reflective |
Jul. 15, 1997 |
| 5641607 |
Anti-reflective layer used to form a semiconductor device |
Jun. 24, 1997 |
| 5639687 |
Method for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitride |
Jun. 17, 1997 |
| 5635335 |
Method for fabricating semiconductor device utilizing dual photoresist films imaged with same exposure mask |
Jun. 3, 1997 |
| 5626967 |
Structure and method for exposing photoresist |
May. 6, 1997 |
| 5604157 |
Reduced notching of polycide gates using silicon anti reflection layer |
Feb. 18, 1997 |
| 5600165 |
Semiconductor device with antireflection film |
Feb. 4, 1997 |
| 5595938 |
Method of manufacturing semiconductor device |
Jan. 21, 1997 |
| 5593725 |
Anti-reflective layer and method for manufacturing semiconductor device using the same |
Jan. 14, 1997 |
| 5591566 |
Method of forming a resist pattern by using a silicon carbide anti-reflective layer |
Jan. 7, 1997 |
| 5554489 |
Method of forming a fine resist pattern using an alkaline film covered photoresist |
Sep. 10, 1996 |
| 5539249 |
Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
Jul. 23, 1996 |
| 5527872 |
Electronic device with a spin-on glass dielectric layer |
Jun. 18, 1996 |
| 5525542 |
Method for making a semiconductor device having anti-reflective coating |
Jun. 11, 1996 |
| 5472827 |
Method of forming a resist pattern using an anti-reflective layer |
Dec. 5, 1995 |
| 5472829 |
Method of forming a resist pattern by using an anti-reflective layer |
Dec. 5, 1995 |
| 5472488 |
Coating solution for forming glassy layers |
Dec. 5, 1995 |
| 5459353 |
Semiconductor device including interlayer dielectric film layers and conductive film layers |
Oct. 17, 1995 |
| 5441914 |
Method of forming conductive interconnect structure |
Aug. 15, 1995 |
| 5441616 |
Integrated circuit fabrication method |
Aug. 15, 1995 |
| 5437961 |
Method of manufacturing semiconductor device |
Aug. 1, 1995 |
| 5403781 |
Method of forming multilayered wiring |
Apr. 4, 1995 |
| 5378659 |
Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
Jan. 3, 1995 |
| 5355020 |
Semiconductor device having a multi-layer metal contact |
Oct. 11, 1994 |
| 5326431 |
Dry etching method utilizing (SN).sub.x polymer mask |
Jul. 5, 1994 |
| 5312780 |
Integrated circuit fabrication method |
May. 17, 1994 |
| 5308742 |
Method of etching anti-reflection coating |
May. 3, 1994 |
| 5302198 |
Coating solution for forming glassy layers |
Apr. 12, 1994 |
| 5302538 |
Method of manufacturing field effect transistor |
Apr. 12, 1994 |
| 5286608 |
TiO.sub.x as an anti-reflection coating for metal lithography |
Feb. 15, 1994 |
| 5281850 |
Semiconductor device multilayer metal layer structure including conductive migration resistant layers |
Jan. 25, 1994 |
| 5139974 |
Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer |
Aug. 18, 1992 |
| 5126289 |
Semiconductor lithography methods using an ARC of organic material |
Jun. 30, 1992 |
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