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Class Information
Number: 257/E21.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Photolith ographic process (epo) > Using anti-reflective coating (epo)
Description: This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6030541 |
Process for defining a pattern using an anti-reflective coating and structure therefor |
Feb. 29, 2000 |
| 6027959 |
Methods for in-situ removal of an anti-reflective coating during a nitride resistor protect etching process |
Feb. 22, 2000 |
| 6022799 |
Methods for making a semiconductor device with improved hot carrier lifetime |
Feb. 8, 2000 |
| 6020267 |
Method for forming local interconnect metal structures via the addition of a titanium nitride anti-reflective coating |
Feb. 1, 2000 |
| 6017816 |
Method of fabricating A1N anti-reflection coating on metal layer |
Jan. 25, 2000 |
| 6017819 |
Method for forming a polysilicon/amorphous silicon composite gate electrode |
Jan. 25, 2000 |
| 6013582 |
Method for etching silicon oxynitride and inorganic antireflection coatings |
Jan. 11, 2000 |
| 6007732 |
Reduction of reflection by amorphous carbon |
Dec. 28, 1999 |
| 6004853 |
Method to improve uniformity and the critical dimensions of a DRAM gate structure |
Dec. 21, 1999 |
| 6004850 |
Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation |
Dec. 21, 1999 |
| 5998100 |
Fabrication process using a multi-layer antireflective layer |
Dec. 7, 1999 |
| 5998300 |
Method of manufacturing a semiconductor device using antireflection coating |
Dec. 7, 1999 |
| 5994217 |
Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
Nov. 30, 1999 |
| 5986344 |
Anti-reflective coating layer for semiconductor device |
Nov. 16, 1999 |
| 5981401 |
Method for selective etching of anitreflective coatings |
Nov. 9, 1999 |
| 5976395 |
Selective etching method for stacked organic film |
Nov. 2, 1999 |
| 5977601 |
Method for etching memory gate stack using thin resist layer |
Nov. 2, 1999 |
| 5976769 |
Intermediate layer lithography |
Nov. 2, 1999 |
| 5968711 |
Method of dry etching A1Cu using SiN hard mask |
Oct. 19, 1999 |
| 5962195 |
Method for controlling linewidth by etching bottom anti-reflective coating |
Oct. 5, 1999 |
| 5952156 |
Enhanced reflectivity coating (ERC) for narrow aperture width contact and interconnection lithography |
Sep. 14, 1999 |
| 5948598 |
Anti-reflective silicon nitride film using in-situ deposition |
Sep. 7, 1999 |
| 5926740 |
Graded anti-reflective coating for IC lithography |
Jul. 20, 1999 |
| 5920796 |
In-situ etch of BARC layer during formation of local interconnects |
Jul. 6, 1999 |
| 5918147 |
Process for forming a semiconductor device with an antireflective layer |
Jun. 29, 1999 |
| 5910453 |
Deep UV anti-reflection coating etch |
Jun. 8, 1999 |
| 5897376 |
Method of manufacturing a semiconductor device having a reflection reducing film |
Apr. 27, 1999 |
| 5891784 |
Transistor fabrication method |
Apr. 6, 1999 |
| 5888908 |
Method for reducing reflectivity of a metal layer |
Mar. 30, 1999 |
| 5885902 |
Integrated arc and polysilicon etching process |
Mar. 23, 1999 |
| 5883011 |
Method of removing an inorganic antireflective coating from a semiconductor substrate |
Mar. 16, 1999 |
| 5883006 |
Method for making a semiconductor device using a flowable oxide film |
Mar. 16, 1999 |
| 5876614 |
Method of wet etching aluminum oxide to minimize undercutting |
Mar. 2, 1999 |
| 5871886 |
Sandwiched middle antireflection coating (SMARC) process |
Feb. 16, 1999 |
| 5872054 |
Anti-reflection film and method of manufacturing |
Feb. 16, 1999 |
| 5869365 |
Method of forming T electrode in field effect transistor |
Feb. 9, 1999 |
| 5854132 |
Method for exposing photoresist |
Dec. 29, 1998 |
| 5851927 |
Method of forming a semiconductor device by DUV resist patterning |
Dec. 22, 1998 |
| 5846878 |
Method of manufacturing a wiring layer in a semiconductor device |
Dec. 8, 1998 |
| 5841179 |
Conductive layer with anti-reflective surface portion |
Nov. 24, 1998 |
| 5834125 |
Non-reactive anti-reflection coating |
Nov. 10, 1998 |
| 5831321 |
Semiconductor device in which an anti-reflective layer is formed by varying the composition thereof |
Nov. 3, 1998 |
| 5820926 |
Process for forming and using a non-reactive anti-reflection coating |
Oct. 13, 1998 |
| 5804088 |
Intermediate layer lithography |
Sep. 8, 1998 |
| 5773196 |
Prevention of anti-reflection coating damage |
Jun. 30, 1998 |
| 5763327 |
Integrated arc and polysilicon etching process |
Jun. 9, 1998 |
| 5759746 |
Fabrication process using a thin resist |
Jun. 2, 1998 |
| 5759747 |
Method of manufacturing a semiconductor device |
Jun. 2, 1998 |
| 5759916 |
Method for forming a void-free titanium nitride anti-reflective coating(ARC) layer upon an aluminum containing conductor layer |
Jun. 2, 1998 |
| 5759755 |
Semiconductor substrate containing anti-reflective layer |
Jun. 2, 1998 |
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