 |
|
 |
| |
 |
|
Class Information
Number: 257/E21.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Photolith ographic process (epo) > Using anti-reflective coating (epo)
Description: This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6316372 |
Methods of forming a layer of silicon nitride in a semiconductor fabrication process |
Nov. 13, 2001 |
| 6316167 |
Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
Nov. 13, 2001 |
| 6316168 |
Top layer imaging lithography for semiconductor processing |
Nov. 13, 2001 |
| 6316348 |
High selectivity Si-rich SiON etch-stop layer |
Nov. 13, 2001 |
| 6303477 |
Removal of organic anti-reflection coatings in integrated circuits |
Oct. 16, 2001 |
| 6300240 |
Method for forming bottom anti-reflective coating (BARC) |
Oct. 9, 2001 |
| 6297521 |
Graded anti-reflective coating for IC lithography |
Oct. 2, 2001 |
| 6294820 |
Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer |
Sep. 25, 2001 |
| 6294459 |
Anti-reflective coatings and methods for forming and using same |
Sep. 25, 2001 |
| 6291356 |
Method for etching silicon oxynitride and dielectric antireflection coatings |
Sep. 18, 2001 |
| 6291363 |
Surface treatment of DARC films to reduce defects in subsequent cap layers |
Sep. 18, 2001 |
| 6287959 |
Deep submicron metallization using deep UV photoresist |
Sep. 11, 2001 |
| 6281100 |
Semiconductor processing methods |
Aug. 28, 2001 |
| 6268294 |
Method of protecting a low-K dielectric material |
Jul. 31, 2001 |
| 6268282 |
Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
Jul. 31, 2001 |
| 6265294 |
Integrated circuit having double bottom anti-reflective coating layer |
Jul. 24, 2001 |
| 6261751 |
Low temperature anti-reflective coating for IC lithography |
Jul. 17, 2001 |
| 6258725 |
Method for forming metal line of semiconductor device by (TiA1)N anti-reflective coating layer |
Jul. 10, 2001 |
| 6245493 |
Method for reducing surface reflectivity by increasing surface roughness |
Jun. 12, 2001 |
| 6245669 |
High selectivity Si-rich SiON etch-stop layer |
Jun. 12, 2001 |
| 6242361 |
Plasma treatment to improve DUV photoresist process |
Jun. 5, 2001 |
| 6242344 |
Tri-layer resist method for dual damascene process |
Jun. 5, 2001 |
| 6228760 |
Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish |
May. 8, 2001 |
| 6225215 |
Method for enhancing anti-reflective coatings used in photolithography of electronic devices |
May. 1, 2001 |
| 6225671 |
Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
May. 1, 2001 |
| 6225219 |
Method of stabilizing anti-reflection coating layer |
May. 1, 2001 |
| 6221776 |
Anti-reflective coating used as a disposable etch stop |
Apr. 24, 2001 |
| 6221761 |
Method of stabilizing anti-reflection coating layer |
Apr. 24, 2001 |
| 6221558 |
Anti-reflection oxynitride film for polysilicon substrates |
Apr. 24, 2001 |
| 6218293 |
Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride |
Apr. 17, 2001 |
| 6218292 |
Dual layer bottom anti-reflective coating |
Apr. 17, 2001 |
| 6214637 |
Method of forming a photoresist pattern on a semiconductor substrate using an anti-reflective coating deposited using only a hydrocarbon based gas |
Apr. 10, 2001 |
| 6214526 |
Semiconductor processing using antireflective layer having high wet etch rate |
Apr. 10, 2001 |
| 6214721 |
Method and structure for suppressing light reflections during photolithography exposure steps in processing integrated circuit structures |
Apr. 10, 2001 |
| 6209484 |
Method and apparatus for depositing an etch stop layer |
Apr. 3, 2001 |
| 6200909 |
Method for selective etching of antireflective coatings |
Mar. 13, 2001 |
| 6200734 |
Method for fabricating semiconductor devices |
Mar. 13, 2001 |
| 6194321 |
Semiconductor processing methods utilizing boron and nitrogen, and semiconductor wafers comprising boron and nitrogen |
Feb. 27, 2001 |
| 6194308 |
Method of forming wire line |
Feb. 27, 2001 |
| 6191030 |
Anti-reflective coating layer for semiconductor device |
Feb. 20, 2001 |
| 6191046 |
Deposition of an oxide layer to facilitate photoresist rework on polygate layer |
Feb. 20, 2001 |
| 6187667 |
Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit |
Feb. 13, 2001 |
| 6183940 |
Method of retaining the integrity of a photoresist pattern |
Feb. 6, 2001 |
| 6177355 |
Pad etch process capable of thick titanium nitride arc removal |
Jan. 23, 2001 |
| 6177235 |
Antireflection treatment of reflective surfaces |
Jan. 23, 2001 |
| 6174818 |
Method of patterning narrow gate electrode |
Jan. 16, 2001 |
| 6174644 |
Anti-reflective silicon nitride film using in-situ deposition |
Jan. 16, 2001 |
| 6174590 |
Isolation using an antireflective coating |
Jan. 16, 2001 |
| 6174816 |
Treatment for film surface to reduce photo footing |
Jan. 16, 2001 |
| 6171973 |
Process for etching the gate in MOS technology using a SiON-based hard mask |
Jan. 9, 2001 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
