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Class Information
Number: 257/E21.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Photolith ographic process (epo) > Using anti-reflective coating (epo)
Description: This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6518206 |
Method for etching an anti-reflective coating |
Feb. 11, 2003 |
| 6514667 |
Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof |
Feb. 4, 2003 |
| 6509251 |
Method of forming a resist pattern for blocking implantation of an impurity into a semiconductor substrate |
Jan. 21, 2003 |
| 6506497 |
Spin-on-glass anti-reflective coatings for photolithography |
Jan. 14, 2003 |
| 6500774 |
Method and apparatus for an increased throughput furnace nitride BARC process |
Dec. 31, 2002 |
| 6500773 |
Method of depositing organosilicate layers |
Dec. 31, 2002 |
| 6498080 |
Transistor fabrication method |
Dec. 24, 2002 |
| 6495450 |
Isolation using an antireflective coating |
Dec. 17, 2002 |
| 6479879 |
Low defect organic BARC coating in a semiconductor structure |
Nov. 12, 2002 |
| 6475707 |
Method of reworking photoresist layer |
Nov. 5, 2002 |
| 6465366 |
Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
Oct. 15, 2002 |
| 6461950 |
Semiconductor processing methods, semiconductor circuitry, and gate stacks |
Oct. 8, 2002 |
| 6461970 |
Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
Oct. 8, 2002 |
| 6458689 |
Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish |
Oct. 1, 2002 |
| 6459155 |
Damascene processing employing low Si-SiON etch stop layer/arc |
Oct. 1, 2002 |
| 6448185 |
Method for making a semiconductor device that has a dual damascene interconnect |
Sep. 10, 2002 |
| 6444584 |
Plasma etch method for forming composite silicon/dielectric/silicon stack layer |
Sep. 3, 2002 |
| 6444588 |
Anti-reflective coatings and methods regarding same |
Sep. 3, 2002 |
| 6441452 |
Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
Aug. 27, 2002 |
| 6440640 |
Thin resist with transition metal hard mask for via etch application |
Aug. 27, 2002 |
| 6428894 |
Tunable and removable plasma deposited antireflective coatings |
Aug. 6, 2002 |
| 6423631 |
Isolation using an antireflective coating |
Jul. 23, 2002 |
| 6423384 |
HDP-CVD deposition of low dielectric constant amorphous carbon film |
Jul. 23, 2002 |
| 6423474 |
Use of DARC and BARC in flash memory processing |
Jul. 23, 2002 |
| 6417113 |
Material removal method using germanium |
Jul. 9, 2002 |
| 6416933 |
Method to produce small space pattern using plasma polymerization layer |
Jul. 9, 2002 |
| 6410461 |
Method of depositing sion with reduced defects |
Jun. 25, 2002 |
| 6410421 |
Semiconductor device with anti-reflective structure and methods of manufacture |
Jun. 25, 2002 |
| 6399481 |
Method for forming resist pattern |
Jun. 4, 2002 |
| 6399497 |
Semiconductor manufacturing process and semiconductor device |
Jun. 4, 2002 |
| 6387785 |
Lithography and etching process |
May. 14, 2002 |
| 6383941 |
Method of etching organic ARCs in patterns having variable spacings |
May. 7, 2002 |
| 6383947 |
Anti-reflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologies |
May. 7, 2002 |
| 6383939 |
Method for etching memory gate stack using thin resist layer |
May. 7, 2002 |
| 6383723 |
Method to clean substrate and improve photoresist profile |
May. 7, 2002 |
| 6380067 |
Method for creating partially UV transparent anti-reflective coating for semiconductors |
Apr. 30, 2002 |
| 6380611 |
Treatment for film surface to reduce photo footing |
Apr. 30, 2002 |
| 6376392 |
PECVD process for ULSI ARL |
Apr. 23, 2002 |
| 6372651 |
Method for trimming a photoresist pattern line for memory gate etching |
Apr. 16, 2002 |
| 6365519 |
Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride |
Apr. 2, 2002 |
| 6365333 |
Low temperature anti-reflective coating for IC lithography |
Apr. 2, 2002 |
| 6365320 |
Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithography |
Apr. 2, 2002 |
| 6352922 |
Method of fabrication of a semiconductor device having a double layer type anti-reflective layer |
Mar. 5, 2002 |
| 6348721 |
Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum |
Feb. 19, 2002 |
| 6348405 |
Interconnection forming method utilizing an inorganic antireflection layer |
Feb. 19, 2002 |
| 6340557 |
Pattern formation method |
Jan. 22, 2002 |
| 6331379 |
Photo-lithography process using multiple anti-reflective coatings |
Dec. 18, 2001 |
| 6326321 |
Methods of forming a layer of silicon nitride in semiconductor fabrication processes |
Dec. 4, 2001 |
| 6326231 |
Use of silicon oxynitride ARC for metal layers |
Dec. 4, 2001 |
| 6323141 |
Method for forming anti-reflective coating layer with enhanced film thickness uniformity |
Nov. 27, 2001 |
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