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Class Information
Number: 257/E21.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Making mask on semicond uctor body for further photolithographic processing (epo) > Comprising organic layer (epo) > Characterized by treatment of photoresist layer (epo) > Photolith ographic process (epo) > Using anti-reflective coating (epo)
Description: This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6890865 |
Low k film application for interlevel dielectric and method of cleaning etched features |
May. 10, 2005 |
| 6887796 |
Method of wet etching a silicon and nitrogen containing material |
May. 3, 2005 |
| 6878619 |
Method for fabricating semiconductor device |
Apr. 12, 2005 |
| 6878622 |
Method for forming SAC using a dielectric as a BARC and FICD enlarger |
Apr. 12, 2005 |
| 6875558 |
Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI) |
Apr. 5, 2005 |
| 6875559 |
Method of etching materials patterned with a single layer 193nm resist |
Apr. 5, 2005 |
| 6876065 |
Semiconductor device and a fabrication method thereof |
Apr. 5, 2005 |
| 6875664 |
Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material |
Apr. 5, 2005 |
| 6869888 |
E-beam flood exposure of spin-on material to eliminate voids in vias |
Mar. 22, 2005 |
| 6867063 |
Organic spin-on anti-reflective coating over inorganic anti-reflective coating |
Mar. 15, 2005 |
| 6867129 |
Method of improving the top plate electrode stress inducting voids for 1T-RAM process |
Mar. 15, 2005 |
| 6861367 |
Semiconductor processing method using photoresist and an antireflective coating |
Mar. 1, 2005 |
| 6855484 |
Method of depositing low dielectric constant silicon carbide layers |
Feb. 15, 2005 |
| 6852473 |
Anti-reflective coating conformality control |
Feb. 8, 2005 |
| 6852640 |
Method for fabricating a hard mask |
Feb. 8, 2005 |
| 6849538 |
Semiconductor device and a fabrication method thereof |
Feb. 1, 2005 |
| 6849556 |
Etching method, gate etching method, and method of manufacturing semiconductor devices |
Feb. 1, 2005 |
| 6849389 |
Method to prevent pattern collapse in features etched in sulfur dioxide-containing plasmas |
Feb. 1, 2005 |
| 6841491 |
In situ deposition of a nitride layer and of an anti-reflective layer |
Jan. 11, 2005 |
| 6841341 |
Method of depositing an amorphous carbon layer |
Jan. 11, 2005 |
| 6838340 |
Method of manufacturing semiconductor device having MIM capacitor element |
Jan. 4, 2005 |
| 6828251 |
Method for improved plasma etching control |
Dec. 7, 2004 |
| 6824879 |
Spin-on-glass anti-reflective coatings for photolithography |
Nov. 30, 2004 |
| 6818141 |
Application of the CVD bilayer ARC as a hard mask for definition of the subresolution trench features between polysilicon wordlines |
Nov. 16, 2004 |
| 6803661 |
Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography |
Oct. 12, 2004 |
| 6797637 |
Semiconductor device fabrication method |
Sep. 28, 2004 |
| 6794279 |
Passivating inorganic bottom anti-reflective coating (BARC) using rapid thermal anneal (RTA) with oxidizing gas |
Sep. 21, 2004 |
| 6794297 |
Method for etching an antireflective coating and for fabricating a semiconductor device |
Sep. 21, 2004 |
| 6787452 |
Use of amorphous carbon as a removable ARC material for dual damascene fabrication |
Sep. 7, 2004 |
| 6784094 |
Anti-reflective coatings and methods for forming and using same |
Aug. 31, 2004 |
| 6780727 |
Method for forming a MIM (metal-insulator-metal) capacitor |
Aug. 24, 2004 |
| 6773998 |
Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning |
Aug. 10, 2004 |
| 6764944 |
Method for forming metal wire interconnection in semiconductor devices using dual damascene process |
Jul. 20, 2004 |
| 6764964 |
Method for forming patterns of a semiconductor device |
Jul. 20, 2004 |
| 6743712 |
Method of making a semiconductor device by forming a masking layer with a tapered etch profile |
Jun. 1, 2004 |
| 6743726 |
Method for etching a trench through an anti-reflective coating |
Jun. 1, 2004 |
| 6733955 |
Methods for forming self-planarized dielectric layer for shallow trench isolation |
May. 11, 2004 |
| 6734518 |
Surface treatment of DARC films to reduce defects in subsequent cap layers |
May. 11, 2004 |
| 6727566 |
TRANSPARENT SUBSTRATE WITH CONDUCTIVE MULTILAYER ANTI REFLECTION FILM, TRANSPARENT TOUCH PANEL USING THE TRANSPARENT SUBSTRATE WITH MULTILAYER ANTI REFLECTION FILM AND ELECTRONIC APPARATUS USI |
Apr. 27, 2004 |
| 6727173 |
Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks |
Apr. 27, 2004 |
| 6727166 |
Removal of silicon oxynitride material using a wet chemical process after gate etch processing |
Apr. 27, 2004 |
| 6720251 |
Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing |
Apr. 13, 2004 |
| 6713404 |
Methods of forming semiconductor constructions |
Mar. 30, 2004 |
| 6713234 |
Fabrication of semiconductor devices using anti-reflective coatings |
Mar. 30, 2004 |
| 6703672 |
Polysilicon/amorphous silicon composite gate electrode |
Mar. 9, 2004 |
| 6703323 |
Method of inhibiting pattern collapse using a relacs material |
Mar. 9, 2004 |
| 6699641 |
Photosensitive bottom anti-reflective coating |
Mar. 2, 2004 |
| 6690077 |
Antireflective coating and field emission display device, semiconductor device and wiring line comprising same |
Feb. 10, 2004 |
| 6689682 |
Multilayer anti-reflective coating for semiconductor lithography |
Feb. 10, 2004 |
| 6686296 |
Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing |
Feb. 3, 2004 |
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