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Class Information
Number: 257/E21.018
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Manufacture of two-terminal component for integrated circuit (epo) > Of capacitor (epo) > Formation of electrode (epo) > With increased surface area, e.g., by roughening, texturing (epo) > Having vertical extensions (epo)
Description: This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2V.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5937314 |
Diffusion-enhanced crystallization of amorphous materials to improve surface roughness |
Aug. 10, 1999 |
| 5900660 |
Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory calls |
May. 4, 1999 |
| 5882979 |
Method for forming controllable surface enhanced three dimensional objects |
Mar. 16, 1999 |
| 5849624 |
Method of fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor |
Dec. 15, 1998 |
| 5726085 |
Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback |
Mar. 10, 1998 |
| 5723379 |
Method for fabricating polycrystalline silicon having micro roughness on the surface |
Mar. 3, 1998 |
| 5457063 |
Method for fabricating a capacitor for a dynamic random access memory cell |
Oct. 10, 1995 |
| 5387533 |
Method of making dynamic random access memory |
Feb. 7, 1995 |
| 5234857 |
Method of making semiconductor device having a capacitor of large capacitance |
Aug. 10, 1993 |
| 5227651 |
Semiconductor device having a capacitor with an electrode grown through pinholes |
Jul. 13, 1993 |
| 5170233 |
Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor |
Dec. 8, 1992 |
| 5049517 |
Method for formation of a stacked capacitor |
Sep. 17, 1991 |
| 5021920 |
Multilevel integrated circuit capacitor and method of fabrication |
Jun. 4, 1991 |
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