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Class Information
Number: 257/E21.018
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Manufacture of two-terminal component for integrated circuit (epo) > Of capacitor (epo) > Formation of electrode (epo) > With increased surface area, e.g., by roughening, texturing (epo) > Having vertical extensions (epo)
Description: This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2V.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.019 Made by depositing layers, e.g., alternatingly conductive and insulating layers (epo) 757
257/E21.02 Made by patterning layers, e.g., etching conductive layers (epo) 184


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6313497 Semiconductor device and method for manufacturing the same Nov. 6, 2001
6312985 Method of fabricating a bottom electrode Nov. 6, 2001
6312988 Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions Nov. 6, 2001
6309941 Methods of forming capacitors Oct. 30, 2001
6306705 Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits Oct. 23, 2001
6307730 Capacitor formed by lower electrode having inner and outer uneven surfaces Oct. 23, 2001
6303456 Method for making a finger capacitor with tuneable dielectric constant Oct. 16, 2001
6303956 Conductive container structures having a dielectric cap Oct. 16, 2001
6294426 Method of fabricating a capacitor under bit line structure with increased capacitance without increasing the aspect ratio for a dry etched bit line contact hole Sep. 25, 2001
6288446 Semiconductor device with pillar-shaped capacitor storage node Sep. 11, 2001
6287910 Method for forming a capacitor using tantalum nitride as a capacitor dielectric Sep. 11, 2001
6268245 Method for forming a DRAM cell with a ragged polysilicon crown-shaped capacitor Jul. 31, 2001
6265280 Method for manufacturing a cylindrical semiconductor capacitor Jul. 24, 2001
6259127 Integrated circuit container having partially rugged surface Jul. 10, 2001
6258729 Oxide etching method and structures resulting from same Jul. 10, 2001
6258664 Methods of forming silicon-comprising materials having roughened outer surfaces, and methods of forming capacitor constructions Jul. 10, 2001
6255159 Method to form hemispherical grained polysilicon Jul. 3, 2001
6249019 Container capacitor with increased surface area and method for making same Jun. 19, 2001
6232168 Memory circuitry and method of forming memory circuitry May. 15, 2001
6232628 Semiconductor device having stacked capacitor structure May. 15, 2001
6225232 Semiconductor processing methods, and methods of forming capacitor constructions May. 1, 2001
6221714 Method of forming a contact hole in a semiconductor substrate using oxide spacers on the sidewalls of the contact hole Apr. 24, 2001
6222722 Storage capacitor having undulated lower electrode for a semiconductor device Apr. 24, 2001
6218296 Semiconductor device with pillar-shaped capacitor storage node and method of fabricating the same Apr. 17, 2001
6211033 Integrated capacitor bottom electrode for use with conformal dielectric Apr. 3, 2001
6207523 Methods of forming capacitors DRAM arrays, and monolithic integrated circuits Mar. 27, 2001
6207986 Semiconductor integrated circuit device Mar. 27, 2001
6204143 Method of forming high aspect ratio structures for semiconductor devices Mar. 20, 2001
6200905 Method to form sidewall polysilicon capacitors Mar. 13, 2001
6197652 Fabrication method of a twin-tub capacitor Mar. 6, 2001
6194263 Methods for forming capacitor structures including etching pits Feb. 27, 2001
6187629 Method of fabricating a DRAM capacitor Feb. 13, 2001
6180485 Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits Jan. 30, 2001
6180452 Shared length cell for improved capacitance Jan. 30, 2001
6175129 Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures Jan. 16, 2001
6159791 Fabrication method of capacitor Dec. 12, 2000
6146942 Method of manufacturing a semiconductor memory device Nov. 14, 2000
6143617 Composite capacitor electrode for a DRAM cell Nov. 7, 2000
6133090 Method of fabricating cylindrical capacitor Oct. 17, 2000
6121108 Method for fabricating a capacitor in a dynamic random access memory Sep. 19, 2000
6121081 Method to form hemi-spherical grain (HSG) silicon Sep. 19, 2000
6097052 Semiconductor device and a method of manufacturing thereof Aug. 1, 2000
RE36786 Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node Jul. 18, 2000
6080633 Method for manufacturing capacitor's lower electrode Jun. 27, 2000
6066529 Method for enlarging surface area of a plurality of hemi-spherical grains on the surface of a semiconductor chip May. 23, 2000
6051859 DRAM having a cup-shaped storage node electrode recessed within an insulating layer Apr. 18, 2000
6037205 Method of forming capacitor for semiconductor device using N.sub.2 O gas Mar. 14, 2000
6025624 Shared length cell for improved capacitance Feb. 15, 2000
5986300 Semiconductor memory device and method of manufacturing the same Nov. 16, 1999
5985732 Method of forming integrated stacked capacitors with rounded corners Nov. 16, 1999

1 2 3 4 5 6 7


 
 
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