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Class Information
Number: 257/E21.018
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Manufacture of two-terminal component for integrated circuit (epo) > Of capacitor (epo) > Formation of electrode (epo) > With increased surface area, e.g., by roughening, texturing (epo) > Having vertical extensions (epo)
Description: This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2V.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6916380 |
System for depositing a layered film |
Jul. 12, 2005 |
| 6902973 |
Hemi-spherical grain silicon enhancement |
Jun. 7, 2005 |
| 6893913 |
Method for forming capacitor of semiconductor device |
May. 17, 2005 |
| 6893963 |
Method for forming a titanium nitride layer |
May. 17, 2005 |
| 6893915 |
Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same |
May. 17, 2005 |
| 6881682 |
Method and structure for reducing leakage current in capacitors |
Apr. 19, 2005 |
| 6881643 |
Semiconductor device producing method and semiconductor device |
Apr. 19, 2005 |
| 6881642 |
Method of forming a MIM capacitor with metal nitride electrode |
Apr. 19, 2005 |
| 6869877 |
Integrated capacitors fabricated with conductive metal oxides |
Mar. 22, 2005 |
| 6864179 |
Semiconductor memory device having COB structure and method of fabricating the same |
Mar. 8, 2005 |
| 6861355 |
Metal plating using seed film |
Mar. 1, 2005 |
| 6861330 |
Structures and methods for enhancing capacitors in integrated circuits |
Mar. 1, 2005 |
| 6858536 |
Processes to form a metallic film stack |
Feb. 22, 2005 |
| 6852591 |
Method of forming CMOS imager with storage capacitor |
Feb. 8, 2005 |
| 6849387 |
Method for integrating copper process and MIM capacitor for embedded DRAM |
Feb. 1, 2005 |
| 6849894 |
Semiconductor device with transistor and capacitor and its manufacture method |
Feb. 1, 2005 |
| 6849497 |
Method of fabricating a semiconductor integrated circuit including a capacitor formed on a single insulating substrate layer having lower boron dose in the vicinity of the surface thereof |
Feb. 1, 2005 |
| 6846711 |
Method of making a metal oxide capacitor, including a barrier film |
Jan. 25, 2005 |
| 6838338 |
Integrated capacitor bottom electrode for use with conformal dielectric |
Jan. 4, 2005 |
| 6835617 |
Methods of forming hemispherical grained silicon on a template on a semiconductor work object |
Dec. 28, 2004 |
| 6833578 |
Method and structure improving isolation between memory cell passing gate and capacitor |
Dec. 21, 2004 |
| 6833579 |
Conductive container structures having a dielectric cap |
Dec. 21, 2004 |
| 6830971 |
High K artificial lattices for capacitor applications to use in CU or AL BEOL |
Dec. 14, 2004 |
| 6830972 |
Method of forming memory circuitry |
Dec. 14, 2004 |
| 6831319 |
Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors |
Dec. 14, 2004 |
| 6828617 |
Method for fabricating a capacitor of a semiconductor device and a capacitor made thereby |
Dec. 7, 2004 |
| 6829127 |
High performance capacitor structure |
Dec. 7, 2004 |
| 6828616 |
Integrated circuit devices that utilize doped Poly-Si1-xGex conductive plugs as interconnects |
Dec. 7, 2004 |
| 6828193 |
Methods of forming hemispherical grained silicon on a template on a semiconductor work object |
Dec. 7, 2004 |
| 6825081 |
Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors |
Nov. 30, 2004 |
| 6825095 |
Methods of forming capacitors |
Nov. 30, 2004 |
| 6825520 |
Capacitor with a roughened silicide layer |
Nov. 30, 2004 |
| 6822312 |
Interdigitated multilayer capacitor structure for deep sub-micron CMOS |
Nov. 23, 2004 |
| 6819543 |
Multilayer capacitor with multiple plates per layer |
Nov. 16, 2004 |
| 6815752 |
Semiconductor memory device for increasing access speed thereof |
Nov. 9, 2004 |
| 6812542 |
Electric fuse whose dielectric breakdown resistance is controlled by injecting impurities into an insulating film of a capacitor structure, and a method for manufacturing the same |
Nov. 2, 2004 |
| 6812109 |
Integrated decoupling capacitors |
Nov. 2, 2004 |
| 6803271 |
Method for manufacturing semiconductor integrated circuit device |
Oct. 12, 2004 |
| 6803621 |
Oxygen barrier for cell container process |
Oct. 12, 2004 |
| 6791135 |
Semiconductor device with improved capacitive element and method of forming the same |
Sep. 14, 2004 |
| 6791137 |
Semiconductor integrated circuit device and process for manufacturing the same |
Sep. 14, 2004 |
| 6787834 |
Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth |
Sep. 7, 2004 |
| 6783998 |
Conductive thin film, a capacitor using the same and a method of manufacturing thereof |
Aug. 31, 2004 |
| 6781183 |
Capacitor structure and method for fabricating the same |
Aug. 24, 2004 |
| 6780766 |
Methods of forming regions of differing composition over a substrate |
Aug. 24, 2004 |
| 6777735 |
Semiconductor memory device having a metal plug or a landing pad |
Aug. 17, 2004 |
| 6767806 |
METHOD OF FORMING A PATTERNED SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL, AND METHOD OF FORMING A CAPACITOR HAVING A CAPACITOR DIELECTRIC REGION COMPRISING SUBSTANTIALLY CRYSTALLINE T |
Jul. 27, 2004 |
| 6764863 |
Memory-storage node and the method of fabricating the same |
Jul. 20, 2004 |
| 6762482 |
Memory device with composite contact plug and method for manufacturing the same |
Jul. 13, 2004 |
| 6759293 |
Method for manufacturing a capacitor in a semiconductor device |
Jul. 6, 2004 |
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