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Class Information
Number: 257/E21.015
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Manufacture of two-terminal component for integrated circuit (epo) > Of capacitor (epo) > Formation of electrode (epo) > With increased surface area, e.g., by roughening, texturing (epo) > Having horizontal extensions (epo)
Description: This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2H.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.016 Made by depositing layers, e.g., alternatingly conductive and insulating layers (epo) 190
257/E21.017 Made by patterning layers, e.g., etching conductive layers (epo) 44


Patents under this class:

Patent Number Title Of Patent Date Issued
7071070 Method of fabricating capacitor Jul. 4, 2006
7049246 Method for selective fabrication of high capacitance density areas in a low dielectric constant material May. 23, 2006
7001780 Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method Feb. 21, 2006
6992344 Damascene integration scheme for developing metal-insulator-metal capacitors Jan. 31, 2006
6975500 Capacitor having improved electrodes Dec. 13, 2005
6927100 Method of fabricating semiconductor device having blocking layer and fuse Aug. 9, 2005
6838338 Integrated capacitor bottom electrode for use with conformal dielectric Jan. 4, 2005
6819542 Interdigitated capacitor structure for an integrated circuit Nov. 16, 2004
6794262 MIM capacitor structures and fabrication methods in dual-damascene structures Sep. 21, 2004
6784048 Method of fabricating a DRAM cell having a thin dielectric access transistor and a thick dielectric storage Aug. 31, 2004
6744676 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same Jun. 1, 2004
6704219 FeRAM memory and method for manufacturing it Mar. 9, 2004
6654295 Reduced topography DRAM cell fabricated using a modified logic process and method for operating same Nov. 25, 2003
6642098 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same Nov. 4, 2003
6573548 DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same Jun. 3, 2003
6563191 Interdigitated capacitor with dielectric overlay May. 13, 2003
6555432 Integrated capacitor bottom electrode for use with conformal dielectric Apr. 29, 2003
6525363 Integrated circuit configuration with at least one capacitor and method for producing the same Feb. 25, 2003
6507065 Doped silicon structure with impression image on opposing roughened surfaces Jan. 14, 2003
6468855 Reduced topography DRAM cell fabricated using a modified logic process and method for operating same Oct. 22, 2002
6461981 Method of forming a conformal oxide film Oct. 8, 2002
6403444 Method for forming storage capacitor having undulated lower electrode for a semiconductor device Jun. 11, 2002
6380581 DRAM technology compatible non volatile memory cells with capacitors connected to the gates of the transistors Apr. 30, 2002
6333545 Semiconductor device having blocking layer and fuses Dec. 25, 2001
6236080 Method of manufacturing a capacitor for high density DRAMs May. 22, 2001
6222722 Storage capacitor having undulated lower electrode for a semiconductor device Apr. 24, 2001
6211033 Integrated capacitor bottom electrode for use with conformal dielectric Apr. 3, 2001
6211036 Semiconductor device having an improved capacitor structure, and a method of manufacturing the same Apr. 3, 2001
6146942 Method of manufacturing a semiconductor memory device Nov. 14, 2000
6133085 Method for making a DRAM capacitor using a rotated photolithography mask Oct. 17, 2000
6121108 Method for fabricating a capacitor in a dynamic random access memory Sep. 19, 2000
6080633 Method for manufacturing capacitor's lower electrode Jun. 27, 2000
6022806 Method of forming a film in recess by vapor phase growth Feb. 8, 2000
5986300 Semiconductor memory device and method of manufacturing the same Nov. 16, 1999
5900660 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory calls May. 4, 1999
5849618 Method for fabricating capacitor of semiconductor device Dec. 15, 1998
5824593 Method for making a capacitor on a semiconductor device Oct. 20, 1998
5756388 Method for fabricating a rake-shaped capacitor May. 26, 1998
5726085 Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback Mar. 10, 1998
5521408 Hole capacitor for DRAM cell May. 28, 1996
5478769 Process for fabricating a stashed capacitor in a semiconductor device Dec. 26, 1995
5455204 Thin capacitor dielectric by rapid thermal processing Oct. 3, 1995
5422295 Method for forming a semiconductor memory device having a vertical multi-layered storage electrode Jun. 6, 1995
5387531 Hole capacitor for dram cell and a fabrication method thereof Feb. 7, 1995
5283204 Method of forming passivation oxidation for improving cell leakage and cell area Feb. 1, 1994
5049517 Method for formation of a stacked capacitor Sep. 17, 1991



 
 
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