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Class Information
Number: 257/E21.01
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Manufacture of two-terminal component for integrated circuit (epo) > Of capacitor (epo) > Dielectric having perovskite structure (epo) > Dielectric comprising two or more layers, e.g., buffer layers, seed layers, gradient layers (epo)
Description: This subclass is indented under subclass E21.009. This subclass is substantially the same in scope as ECLA classification H01L21/02B3B2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459731 |
Device containing isolation regions with threading dislocations |
Dec. 2, 2008 |
| 7452783 |
Capacitor for a semiconductor device and method of forming the same |
Nov. 18, 2008 |
| 7442983 |
Method for making a semiconductor device having a high-k gate dielectric |
Oct. 28, 2008 |
| 7416936 |
Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same |
Aug. 26, 2008 |
| 7417276 |
Thin film capacitor and fabrication method thereof |
Aug. 26, 2008 |
| 7413931 |
Semiconductor device manufacturing method |
Aug. 19, 2008 |
| 7393746 |
Post-silicide spacer removal |
Jul. 1, 2008 |
| 7393796 |
Composite dielectric forming methods and composite dielectrics |
Jul. 1, 2008 |
| 7371633 |
Dielectric layer for semiconductor device and method of manufacturing the same |
May. 13, 2008 |
| 7354849 |
Catalytically enhanced atomic layer deposition process |
Apr. 8, 2008 |
| 7341948 |
Method of making a semiconductor structure with a plating enhancement layer |
Mar. 11, 2008 |
| 7314806 |
Methods of forming metal-insulator-metal (MIM) capacitors with separate seed |
Jan. 1, 2008 |
| 7294544 |
Method of making a metal-insulator-metal capacitor in the CMOS process |
Nov. 13, 2007 |
| 7291530 |
Semiconductor storage device and method of manufacturing the same |
Nov. 6, 2007 |
| 7282380 |
Method for manufacturing semiconductor device |
Oct. 16, 2007 |
| 7276438 |
Method of manufacturing wiring substrate |
Oct. 2, 2007 |
| 7259071 |
Semiconductor device with dual gate oxides |
Aug. 21, 2007 |
| 7256144 |
Method for forming a metal oxide film |
Aug. 14, 2007 |
| 7223685 |
Damascene fabrication with electrochemical layer removal |
May. 29, 2007 |
| 7198999 |
Flash memory device having a graded composition, high dielectric constant gate insulator |
Apr. 3, 2007 |
| 7192828 |
Capacitor with high dielectric constant materials and method of making |
Mar. 20, 2007 |
| 7189626 |
Electroless plating of metal caps for chalcogenide-based memory devices |
Mar. 13, 2007 |
| 7176052 |
Capacitor, circuit board, method of formation of capacitor, and method of production of circuit board |
Feb. 13, 2007 |
| 7172947 |
High dielectric constant transition metal oxide materials |
Feb. 6, 2007 |
| 7160779 |
Method for making a semiconductor device having a high-k gate dielectric |
Jan. 9, 2007 |
| 7105461 |
Composite dielectric forming methods and composite dielectrics |
Sep. 12, 2006 |
| 7074680 |
Method for making a semiconductor device having a high-k gate dielectric |
Jul. 11, 2006 |
| 7053432 |
Enhanced surface area capacitor fabrication methods |
May. 30, 2006 |
| 7045855 |
Semiconductor device and corresponding fabrication method |
May. 16, 2006 |
| 7041546 |
Film forming method for depositing a plurality of high-k dielectric films |
May. 9, 2006 |
| 7038284 |
Methods for making a dielectric stack in an integrated circuit |
May. 2, 2006 |
| 7037730 |
Capacitor with high dielectric constant materials and method of making |
May. 2, 2006 |
| 7029945 |
Organic field effect transistor with an organic dielectric |
Apr. 18, 2006 |
| 7031138 |
Ferroelectric capacitor and process for its manufacture |
Apr. 18, 2006 |
| 7026693 |
Insulating film and electronic device |
Apr. 11, 2006 |
| 7023043 |
Top electrode in a strongly oxidizing environment |
Apr. 4, 2006 |
| 7015527 |
Metal oxynitride capacitor barrier layer |
Mar. 21, 2006 |
| 7012306 |
Electrochemical device |
Mar. 14, 2006 |
| 7008801 |
Method of forming ferroelectric thin films on a high-k layer |
Mar. 7, 2006 |
| 7002202 |
Metal oxynitride capacitor barrier layer |
Feb. 21, 2006 |
| 7002788 |
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same |
Feb. 21, 2006 |
| 7002199 |
Semiconductor device using high-dielectric-constant material and method of manufacturing the same |
Feb. 21, 2006 |
| 6998661 |
Integrated circuit structure including electrodes with PGO ferroelectric thin film thereon |
Feb. 14, 2006 |
| 6995419 |
Semiconductor constructions having crystalline dielectric layers |
Feb. 7, 2006 |
| 6987308 |
Ferroelectric capacitors with metal oxide for inhibiting fatigue |
Jan. 17, 2006 |
| 6984565 |
Method of manufacturing a semiconductor device |
Jan. 10, 2006 |
| 6982444 |
Ferroelectric memory device having a hydrogen barrier film |
Jan. 3, 2006 |
| 6958900 |
Multi-layered unit including electrode and dielectric layer |
Oct. 25, 2005 |
| 6955960 |
Decoupling capacitor for high frequency noise immunity |
Oct. 18, 2005 |
| 6955959 |
Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films |
Oct. 18, 2005 |
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