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Class Information
Number: 257/E21.006
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Manufacture of two-terminal component for integrated circuit (epo) > Of resistor (epo) > Active material comprising refractory, transition, or noble metal or metal compound, e.g., alloy, silicide, oxide, nitride (epo)
Description: This subclass is indented under subclass E21.004. This subclass is substantially the same in scope as ECLA classification H01L21/02B2M.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456076 |
Techniques for forming passive devices during semiconductor back-end processing |
Nov. 25, 2008 |
| 7442640 |
Semiconductor device manufacturing methods |
Oct. 28, 2008 |
| 7435674 |
Dielectric interconnect structures and methods for forming the same |
Oct. 14, 2008 |
| 7432208 |
Method of manufacturing suspension structure |
Oct. 7, 2008 |
| 7397107 |
Ferromagnetic capacitor |
Jul. 8, 2008 |
| 7391086 |
Conductive contacts and methods for fabricating conductive contacts for elctrochemical planarization of a work piece |
Jun. 24, 2008 |
| 7387956 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Jun. 17, 2008 |
| 7374964 |
Atomic layer deposition of CeO.sub.2/Al.sub.2O.sub.3 films as gate dielectrics |
May. 20, 2008 |
| 7372090 |
Magnetic random access memory device and method of forming the same |
May. 13, 2008 |
| 7368796 |
Metal gate engineering for surface P-channel devices |
May. 6, 2008 |
| 7341908 |
Semiconductor device and method of manufacturing the same |
Mar. 11, 2008 |
| 7335595 |
Silicide formation using a low temperature anneal process |
Feb. 26, 2008 |
| 7332442 |
Systems and methods for forming metal oxide layers |
Feb. 19, 2008 |
| 7326648 |
Semiconductor device and fabrication process of forming silicide layer on a polysilicon pattern by reducing thickness of metal layer before forming silicide layer on the polysilicon pattern |
Feb. 5, 2008 |
| 7321154 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Jan. 22, 2008 |
| 7314829 |
Method and apparatus for polysilicon resistor formation |
Jan. 1, 2008 |
| 7312151 |
System for ultraviolet atmospheric seed layer remediation |
Dec. 25, 2007 |
| 7300870 |
Systems and methods of forming refractory metal nitride layers using organic amines |
Nov. 27, 2007 |
| 7276444 |
Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device |
Oct. 2, 2007 |
| 7276796 |
Formation of oxidation-resistant seed layer for interconnect applications |
Oct. 2, 2007 |
| 7268077 |
Carbon nanotube reinforced metallic layer |
Sep. 11, 2007 |
| 7262504 |
Multiple stage electroless deposition of a metal layer |
Aug. 28, 2007 |
| 7259057 |
Method for forming capacitor of semiconductor device |
Aug. 21, 2007 |
| 7250379 |
Method of forming metal oxide using an atomic layer deposition process |
Jul. 31, 2007 |
| 7241632 |
MTJ read head with sidewall spacers |
Jul. 10, 2007 |
| 7229920 |
Method of fabricating metal silicide layer |
Jun. 12, 2007 |
| 7217981 |
Tunable temperature coefficient of resistance resistors and method of fabricating same |
May. 15, 2007 |
| 7215006 |
Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement |
May. 8, 2007 |
| 7214988 |
Metal oxide semiconductor transistor |
May. 8, 2007 |
| 7166518 |
System and method for providing a self heating adjustable TiSi.sub.2 resistor |
Jan. 23, 2007 |
| 7160754 |
P-type OFET with fluorinated channels |
Jan. 9, 2007 |
| 7148118 |
Methods of forming metal nitride, and methods of forming capacitor constructions |
Dec. 12, 2006 |
| 7132352 |
Method of eliminating source/drain junction spiking, and device produced thereby |
Nov. 7, 2006 |
| 7098516 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Aug. 29, 2006 |
| 7074683 |
Semiconductor devices and methods of fabricating the same |
Jul. 11, 2006 |
| 7067439 |
ALD metal oxide deposition process using direct oxidation |
Jun. 27, 2006 |
| 7022555 |
Methods of forming a semiconductor memory device |
Apr. 4, 2006 |
| 6993828 |
Method for manufacturing metal thin film resistor |
Feb. 7, 2006 |
| 6979612 |
Semiconductor devices and manufacturing methods |
Dec. 27, 2005 |
| 6943414 |
Method for fabricating a metal resistor in an IC chip and related structure |
Sep. 13, 2005 |
| 6933186 |
Method for BEOL resistor tolerance improvement using anodic oxidation |
Aug. 23, 2005 |
| 6884690 |
Thin-film resistor with high temperature coefficient for use as passive semiconductor component for integrated circuits, and method for producing the same |
Apr. 26, 2005 |
| 6872655 |
Method of forming an integrated circuit thin film resistor |
Mar. 29, 2005 |
| 6841084 |
Etching solution for forming an embedded resistor |
Jan. 11, 2005 |
| 6838380 |
Fabrication of high resistivity structures using focused ion beams |
Jan. 4, 2005 |
| 6809034 |
Method of etching metallic thin film on thin film resistor |
Oct. 26, 2004 |
| 6803636 |
Semiconductor device having silicide films |
Oct. 12, 2004 |
| 6794226 |
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication |
Sep. 21, 2004 |
| 6770564 |
Method of etching metallic thin film on thin film resistor |
Aug. 3, 2004 |
| 6759729 |
Temperature insensitive resistor in an IC chip |
Jul. 6, 2004 |
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