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Class Information
Number: 257/929
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Pn junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer (e.g., diffused from both surfaces of epitaxial layer)
Description: Subject matter comprising an integrated circuit with pn junction isolation and having boundary walls isolating the integrated circuit from its substrate, wherein the walls have a minimum concentration of dopant at an intermediate depth in an epitaxial layer substrate (e.g., diffused from both surfaces of an epitaxial layer).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6867438 |
Solid-state imaging device and manufacturing method thereof |
Mar. 15, 2005 |
| 6838715 |
CMOS image sensor arrangement with reduced pixel light shadowing |
Jan. 4, 2005 |
| 6809003 |
Bi-directional epitaxial doping technique |
Oct. 26, 2004 |
| 6787829 |
LCD panel |
Sep. 7, 2004 |
| 6781162 |
Light emitting device and method of manufacturing the same |
Aug. 24, 2004 |
| 6756617 |
Image sensing apparatus and reading apparatus |
Jun. 29, 2004 |
| 6611007 |
Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures |
Aug. 26, 2003 |
| 6608352 |
Determination of thermal resistance for field effect transistor formed in SOI technology |
Aug. 19, 2003 |
| 5719425 |
Multiple implant lightly doped drain (MILDD) field effect transistor |
Feb. 17, 1998 |
| 5701022 |
Semiconductor memory device with trench capacitor |
Dec. 23, 1997 |
| 5623159 |
Integrated circuit isolation structure for suppressing high-frequency cross-talk |
Apr. 22, 1997 |
| 5478761 |
Method of producing semiconductor device having first and second type field effect transistors |
Dec. 26, 1995 |
| 5408125 |
Semiconductor process for manufacturing semiconductor device with increased operating voltages |
Apr. 18, 1995 |
| 4962322 |
Nonvolatible capacitor random access memory |
Oct. 9, 1990 |
| 4961095 |
Semiconductor memory device with word lines adjacent and non-intersecting with capacitor grooves |
Oct. 2, 1990 |
| 4926224 |
Crosspoint dynamic ram cell for folded bitline array |
May. 15, 1990 |
| 4833518 |
Semiconductor memory device having improved interconnection structure of memory cell array |
May. 23, 1989 |
| 4825268 |
Semiconductor memory device |
Apr. 25, 1989 |
| 4131906 |
Dynamic random access memory using MOS FETs and method for manufacturing same |
Dec. 26, 1978 |
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