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Class Information
Number: 257/928
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With shorted pn or schottky junction other than emitter junction
Description: Subject matter wherein a device has a pn or Schottky junction electrode which is electrically short circuited (i.e., there is a direct connection to both sides of the junction).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7358590 |
Semiconductor device and driving method thereof |
Apr. 15, 2008 |
| 7276771 |
Diode and method for manufacturing the same |
Oct. 2, 2007 |
| 7187054 |
Diode and method for manufacturing the same |
Mar. 6, 2007 |
| 7071534 |
Antifuse structure and method of use |
Jul. 4, 2006 |
| 6975013 |
Diode and method for manufacturing the same |
Dec. 13, 2005 |
| 6770950 |
Non-volatile semiconductor memory structure |
Aug. 3, 2004 |
| 6677612 |
Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure |
Jan. 13, 2004 |
| 6320203 |
Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure |
Nov. 20, 2001 |
| 6300661 |
Mutual implant region used for applying power/ground to a source of a transistor and a well of a substrate |
Oct. 9, 2001 |
| 6281563 |
Laser programming of CMOS semiconductor devices using make-link structure |
Aug. 28, 2001 |
| 6252282 |
Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
Jun. 26, 2001 |
| 6222202 |
System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation |
Apr. 24, 2001 |
| 6175143 |
Schottky barrier |
Jan. 16, 2001 |
| 6133617 |
High breakdown voltage semiconductor device |
Oct. 17, 2000 |
| 5982015 |
High breakdown voltage semiconductor device |
Nov. 9, 1999 |
| 5814832 |
Electron emitting semiconductor device |
Sep. 29, 1998 |
| 5574307 |
Semiconductor device and method of producing the same |
Nov. 12, 1996 |
| 5523610 |
Photodiode array and method for manufacturing the same |
Jun. 4, 1996 |
| 5502348 |
Ballistic charge transport device with integral active contaminant absorption means |
Mar. 26, 1996 |
| 5488247 |
MOS-type semiconductor clamping circuit |
Jan. 30, 1996 |
| 5436498 |
Gettering of impurities by forming a stable chemical compound |
Jul. 25, 1995 |
| 5341022 |
Bipolar transistor having a high ion concentration buried floating collector and method of fabricating the same |
Aug. 23, 1994 |
| 5317186 |
Ring crystallization of wafers to prevent thermal shock |
May. 31, 1994 |
| 5243213 |
MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate through an insulating layer |
Sep. 7, 1993 |
| 5185275 |
Snap-back preventing method for high voltage MOSFET |
Feb. 9, 1993 |
| 5166760 |
Semiconductor Schottky barrier device with pn junctions |
Nov. 24, 1992 |
| 5162876 |
Semiconductor device having high breakdown voltage |
Nov. 10, 1992 |
| 5130778 |
Semiconductor article and preparation thereof |
Jul. 14, 1992 |
| 5057880 |
Semiconductor device having a heteroepitaxial substrate |
Oct. 15, 1991 |
| 5055966 |
Via capacitors within multi-layer, 3 dimensional structures/substrates |
Oct. 8, 1991 |
| 5034795 |
Electrically insulating substrate |
Jul. 23, 1991 |
| 5016081 |
Mobile ion getterer for metal conductors |
May. 14, 1991 |
| 4851358 |
Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
Jul. 25, 1989 |
| 4781766 |
Fault tolerant thin-film photovoltaic cell and method |
Nov. 1, 1988 |
| 4559086 |
Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions |
Dec. 17, 1985 |
| 4433342 |
Amorphous switching device with residual crystallization retardation |
Feb. 21, 1984 |
| 4246590 |
Restoration of high infrared sensitivity in extrinsic silicon detectors |
Jan. 20, 1981 |
| 4187517 |
Semiconductor component |
Feb. 5, 1980 |
| 4094733 |
Method of neutralizing local defects in charge couple device structures |
Jun. 13, 1978 |
| 4053335 |
Method of gettering using backside polycrystalline silicon |
Oct. 11, 1977 |
| 4041519 |
Low transient effect switching device and method |
Aug. 9, 1977 |
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