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Class Information
Number: 257/928
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With shorted pn or schottky junction other than emitter junction
Description: Subject matter wherein a device has a pn or Schottky junction electrode which is electrically short circuited (i.e., there is a direct connection to both sides of the junction).

Patents under this class:

Patent Number Title Of Patent Date Issued
8487415 Rectifier and process for producing the rectifier Jul. 16, 2013
7982285 Antifuse structure having an integrated heating element Jul. 19, 2011
7671371 Semiconductor layer structure and method of making the same Mar. 2, 2010
7569911 Semiconductor device having an improved wiring or electrode structure Aug. 4, 2009
7358590 Semiconductor device and driving method thereof Apr. 15, 2008
7276771 Diode and method for manufacturing the same Oct. 2, 2007
7187054 Diode and method for manufacturing the same Mar. 6, 2007
7071534 Antifuse structure and method of use Jul. 4, 2006
6975013 Diode and method for manufacturing the same Dec. 13, 2005
6770950 Non-volatile semiconductor memory structure Aug. 3, 2004
6677612 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure Jan. 13, 2004
6320203 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure Nov. 20, 2001
6300661 Mutual implant region used for applying power/ground to a source of a transistor and a well of a substrate Oct. 9, 2001
6281563 Laser programming of CMOS semiconductor devices using make-link structure Aug. 28, 2001
6252282 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Jun. 26, 2001
6222202 System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation Apr. 24, 2001
6175143 Schottky barrier Jan. 16, 2001
6133617 High breakdown voltage semiconductor device Oct. 17, 2000
5982015 High breakdown voltage semiconductor device Nov. 9, 1999
5814832 Electron emitting semiconductor device Sep. 29, 1998
5574307 Semiconductor device and method of producing the same Nov. 12, 1996
5523610 Photodiode array and method for manufacturing the same Jun. 4, 1996
5502348 Ballistic charge transport device with integral active contaminant absorption means Mar. 26, 1996
5488247 MOS-type semiconductor clamping circuit Jan. 30, 1996
5436498 Gettering of impurities by forming a stable chemical compound Jul. 25, 1995
5341022 Bipolar transistor having a high ion concentration buried floating collector and method of fabricating the same Aug. 23, 1994
5317186 Ring crystallization of wafers to prevent thermal shock May. 31, 1994
5243213 MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate through an insulating layer Sep. 7, 1993
5185275 Snap-back preventing method for high voltage MOSFET Feb. 9, 1993
5166760 Semiconductor Schottky barrier device with pn junctions Nov. 24, 1992
5162876 Semiconductor device having high breakdown voltage Nov. 10, 1992
5130778 Semiconductor article and preparation thereof Jul. 14, 1992
5057880 Semiconductor device having a heteroepitaxial substrate Oct. 15, 1991
5055966 Via capacitors within multi-layer, 3 dimensional structures/substrates Oct. 8, 1991
5034795 Electrically insulating substrate Jul. 23, 1991
5016081 Mobile ion getterer for metal conductors May. 14, 1991
4851358 Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing Jul. 25, 1989
4781766 Fault tolerant thin-film photovoltaic cell and method Nov. 1, 1988
4559086 Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions Dec. 17, 1985
4433342 Amorphous switching device with residual crystallization retardation Feb. 21, 1984
4246590 Restoration of high infrared sensitivity in extrinsic silicon detectors Jan. 20, 1981
4187517 Semiconductor component Feb. 5, 1980
4094733 Method of neutralizing local defects in charge couple device structures Jun. 13, 1978
4053335 Method of gettering using backside polycrystalline silicon Oct. 11, 1977
4041519 Low transient effect switching device and method Aug. 9, 1977

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