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Class Information
Number: 257/927
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Different doping levels in different parts of pn junction to produce shaped depletion layer
Description: Subject matter wherein a pn junction device contains impurity dopants with differing concentrations of dopant in different parts of the PN junction such that a depletion region associated with the PN junction has a controlled shape.










Patents under this class:

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5498897 Transistor layout for semiconductor integrated circuit Mar. 12, 1996
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5334860 Panel having thin film element formed thereon Aug. 2, 1994
5166760 Semiconductor Schottky barrier device with pn junctions Nov. 24, 1992
5164804 Semiconductor device having high breakdown voltage and low resistance and method of fabricating the same Nov. 17, 1992
4924293 Semiconductor integrated circuit device May. 8, 1990
4839768 Protection of integrated circuits from electrostatic discharges Jun. 13, 1989
4816889 Photoelectric conversion device Mar. 28, 1989
4809046 Semiconductor memory device Feb. 28, 1989
4707718 Read-only memory Nov. 17, 1987
4673969 Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device Jun. 16, 1987
4278989 Semiconductor device having cross wires Jul. 14, 1981
4222062 VMOS Floating gate memory device Sep. 9, 1980
4222063 VMOS Floating gate memory with breakdown voltage lowering region Sep. 9, 1980
3999217 Semiconductor device having parallel path for current flow Dec. 21, 1976











 
 
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