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Class Information
Number: 257/927
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Different doping levels in different parts of pn junction to produce shaped depletion layer
Description: Subject matter wherein a pn junction device contains impurity dopants with differing concentrations of dopant in different parts of the PN junction such that a depletion region associated with the PN junction has a controlled shape.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7304350 |
Threshold voltage control layer in a semiconductor device |
Dec. 4, 2007 |
| 7224003 |
Solid-state image pickup apparatus |
May. 29, 2007 |
| 7141833 |
Photodiode |
Nov. 28, 2006 |
| 6995448 |
Semiconductor package including passive elements and method of manufacture |
Feb. 7, 2006 |
| 6803298 |
Method of manufacturing a device with epitaxial base |
Oct. 12, 2004 |
| 6737731 |
Soft recovery power diode |
May. 18, 2004 |
| 6252282 |
Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
Jun. 26, 2001 |
| 6215077 |
Thin-film laminate type conductor |
Apr. 10, 2001 |
| 6066878 |
High voltage semiconductor structure |
May. 23, 2000 |
| 6011298 |
High voltage termination with buried field-shaping region |
Jan. 4, 2000 |
| 5930660 |
Method for fabricating diode with improved reverse energy characteristics |
Jul. 27, 1999 |
| 5498897 |
Transistor layout for semiconductor integrated circuit |
Mar. 12, 1996 |
| 5345101 |
High voltage semiconductor structure and method |
Sep. 6, 1994 |
| 5336926 |
Bipolar junction exhibiting suppressed kirk effect |
Aug. 9, 1994 |
| 5334860 |
Panel having thin film element formed thereon |
Aug. 2, 1994 |
| 5166760 |
Semiconductor Schottky barrier device with pn junctions |
Nov. 24, 1992 |
| 5164804 |
Semiconductor device having high breakdown voltage and low resistance and method of fabricating the same |
Nov. 17, 1992 |
| 4924293 |
Semiconductor integrated circuit device |
May. 8, 1990 |
| 4839768 |
Protection of integrated circuits from electrostatic discharges |
Jun. 13, 1989 |
| 4816889 |
Photoelectric conversion device |
Mar. 28, 1989 |
| 4809046 |
Semiconductor memory device |
Feb. 28, 1989 |
| 4707718 |
Read-only memory |
Nov. 17, 1987 |
| 4673969 |
Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device |
Jun. 16, 1987 |
| 4278989 |
Semiconductor device having cross wires |
Jul. 14, 1981 |
| 4222062 |
VMOS Floating gate memory device |
Sep. 9, 1980 |
| 4222063 |
VMOS Floating gate memory with breakdown voltage lowering region |
Sep. 9, 1980 |
| 3999217 |
Semiconductor device having parallel path for current flow |
Dec. 21, 1976 |
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