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Class Information
Number: 257/919
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics
Description: Subject matter comprising devices wherein components or portions or regions of the devices having similar structure are electrically connected in series or parallel to average out manufacturing variations in their operational characteristics.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7042007 |
Semiconductor device and method for evaluating characteristics of the same |
May. 9, 2006 |
| 6975005 |
Current reference apparatus and systems |
Dec. 13, 2005 |
| 6949765 |
Padless structure design for easy identification of bridging defects in lines by passive voltage contrast |
Sep. 27, 2005 |
| 6590448 |
Operational amplifier topology and method |
Jul. 8, 2003 |
| 6320262 |
Semiconductor device and manufacturing method thereof |
Nov. 20, 2001 |
| 5965929 |
Bipolar Silicon transistor with arsenic and phosphorous ratio |
Oct. 12, 1999 |
| 5892266 |
Layout structure of capacitive element(s) and interconnections in a semiconductor |
Apr. 6, 1999 |
| 5677888 |
Redundancy circuit for programmable integrated circuits |
Oct. 14, 1997 |
| 5644159 |
Semiconductor device including a band gap reference power supply device |
Jul. 1, 1997 |
| 5625215 |
SRAM cell with balanced load resistors |
Apr. 29, 1997 |
| 5610429 |
Differential analog transistors constructed from digital transistors |
Mar. 11, 1997 |
| 5548143 |
Metal oxide semiconductor transistor and a method for manufacturing the same |
Aug. 20, 1996 |
| 5532509 |
Semiconductor inverter layout having improved electromigration characteristics in the output node |
Jul. 2, 1996 |
| 5488249 |
Differential analog transistors constructed from digital transistors |
Jan. 30, 1996 |
| 5298762 |
Quantum well switching device with stimulated emission capabilities |
Mar. 29, 1994 |
| 5289040 |
Compensating lead structure for distributed IC components |
Feb. 22, 1994 |
| 5189595 |
Edge shrinkage compensated devices |
Feb. 23, 1993 |
| 5175604 |
Field-effect transistor device |
Dec. 29, 1992 |
| 4928156 |
N-channel MOS transistors having source/drain regions with germanium |
May. 22, 1990 |
| 4864382 |
Semiconductor device |
Sep. 5, 1989 |
| 4803533 |
IGT and MOSFET devices having reduced channel width |
Feb. 7, 1989 |
| 4755479 |
Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers |
Jul. 5, 1988 |
| 4700209 |
Avalanche photodiode and a method of making same |
Oct. 13, 1987 |
| 4560582 |
Method of preparing a semiconductor device |
Dec. 24, 1985 |
| 4132573 |
Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion |
Jan. 2, 1979 |
| 4017887 |
Method and means for passivation and isolation in semiconductor devices |
Apr. 12, 1977 |
| 3972113 |
Process of producing semiconductor devices |
Aug. 3, 1976 |
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