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Class Information
Number: 257/917
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Plural dopants of same conductivity type in same region
Description: Subject matter wherein an active solid-state device has a region or portion which contains at least two different impurity elements which have the same electrical conductivity type (i.e., both p-type or both n-type).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 7002218 |
Low capacitance ESD-protection structure under a bond pad |
Feb. 21, 2006 |
| 7002210 |
Semiconductor device including a high-breakdown voltage MOS transistor |
Feb. 21, 2006 |
| 6597038 |
MOS transistor with double drain structure for suppressing short channel effect |
Jul. 22, 2003 |
| 6593638 |
Lightly donor doped electrodes for high-dielectric-constant materials |
Jul. 15, 2003 |
| 6479356 |
Method of manufacturing a semiconductive device with an enhanced junction breakdown strength |
Nov. 12, 2002 |
| 6459140 |
Indium-enhanced bipolar transistor |
Oct. 1, 2002 |
| 6400002 |
Methods of forming field effect transistors and related field effect transistor constructions |
Jun. 4, 2002 |
| 6081007 |
Semiconductor device comprising MIS transistor with high concentration channel injection region |
Jun. 27, 2000 |
| 5969398 |
Method for producing a semiconductor device and a semiconductor device |
Oct. 19, 1999 |
| 5956593 |
Semiconductor device comprising an MOS capacitance |
Sep. 21, 1999 |
| 5952693 |
CMOS semiconductor device comprising graded junctions with reduced junction capacitance |
Sep. 14, 1999 |
| 5719424 |
Graded LDD implant process for sub-half-micron MOS devices |
Feb. 17, 1998 |
| 5408125 |
Semiconductor process for manufacturing semiconductor device with increased operating voltages |
Apr. 18, 1995 |
| 5391909 |
Detection of electron-beam scanning of a substrate |
Feb. 21, 1995 |
| 5389809 |
Silicided MOS transistor |
Feb. 14, 1995 |
| 5150177 |
Schottky diode structure with localized diode well |
Sep. 22, 1992 |
| 5021851 |
NMOS source/drain doping with both P and As |
Jun. 4, 1991 |
| 4967089 |
Pulsed optical source |
Oct. 30, 1990 |
| 4851360 |
NMOS source/drain doping with both P and As |
Jul. 25, 1989 |
| 4658277 |
Two level charge imaging matrix design with stepped insulator |
Apr. 14, 1987 |
| 4566175 |
Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations |
Jan. 28, 1986 |
| 4532537 |
Photodetector with enhanced light absorption |
Jul. 30, 1985 |
| 4329702 |
Low cost reduced blooming device and method for making the same |
May. 11, 1982 |
| 4128897 |
Archival memory media and method for information recording thereon |
Dec. 5, 1978 |
| 4081794 |
Alloy junction archival memory plane and methods for writing data thereon |
Mar. 28, 1978 |
| RE29261 |
Gated silicon diode array camera tube |
Jun. 7, 1977 |
| 4021375 |
Method of fabricating polycrystalline selenium imaging devices |
May. 3, 1977 |
| 4021844 |
Photosensitive diode array storage target |
May. 3, 1977 |
| 4010487 |
Semiconductor arrangement |
Mar. 1, 1977 |
| 3988758 |
Semiconductor camera-tube target |
Oct. 26, 1976 |
| 3985918 |
Method for manufacturing a target for an image pickup tube |
Oct. 12, 1976 |
| 3983574 |
Semiconductor devices having surface state control |
Sep. 28, 1976 |
| 3973270 |
Charge storage target and method of manufacture |
Aug. 3, 1976 |
| 3969750 |
Diffused junction capacitor and process for producing the same |
Jul. 13, 1976 |
| 3966512 |
Method of manufacturing targets of pickup tubes |
Jun. 29, 1976 |
| 3956025 |
Semiconductor devices having surface state control and method of manufacture |
May. 11, 1976 |
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