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Class Information
Number: 257/917
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Plural dopants of same conductivity type in same region
Description: Subject matter wherein an active solid-state device has a region or portion which contains at least two different impurity elements which have the same electrical conductivity type (i.e., both p-type or both n-type).










Patents under this class:

Patent Number Title Of Patent Date Issued
7777294 Semiconductor device including a high-breakdown voltage MOS transistor Aug. 17, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7030464 Semiconductor device and method of manufacturing the same Apr. 18, 2006
7002210 Semiconductor device including a high-breakdown voltage MOS transistor Feb. 21, 2006
7002218 Low capacitance ESD-protection structure under a bond pad Feb. 21, 2006
6597038 MOS transistor with double drain structure for suppressing short channel effect Jul. 22, 2003
6593638 Lightly donor doped electrodes for high-dielectric-constant materials Jul. 15, 2003
6479356 Method of manufacturing a semiconductive device with an enhanced junction breakdown strength Nov. 12, 2002
6459140 Indium-enhanced bipolar transistor Oct. 1, 2002
6400002 Methods of forming field effect transistors and related field effect transistor constructions Jun. 4, 2002
6081007 Semiconductor device comprising MIS transistor with high concentration channel injection region Jun. 27, 2000
5969398 Method for producing a semiconductor device and a semiconductor device Oct. 19, 1999
5956593 Semiconductor device comprising an MOS capacitance Sep. 21, 1999
5952693 CMOS semiconductor device comprising graded junctions with reduced junction capacitance Sep. 14, 1999
5719424 Graded LDD implant process for sub-half-micron MOS devices Feb. 17, 1998
5408125 Semiconductor process for manufacturing semiconductor device with increased operating voltages Apr. 18, 1995
5391909 Detection of electron-beam scanning of a substrate Feb. 21, 1995
5389809 Silicided MOS transistor Feb. 14, 1995
5150177 Schottky diode structure with localized diode well Sep. 22, 1992
5021851 NMOS source/drain doping with both P and As Jun. 4, 1991
4967089 Pulsed optical source Oct. 30, 1990
4851360 NMOS source/drain doping with both P and As Jul. 25, 1989
4658277 Two level charge imaging matrix design with stepped insulator Apr. 14, 1987
4566175 Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations Jan. 28, 1986
4532537 Photodetector with enhanced light absorption Jul. 30, 1985
4329702 Low cost reduced blooming device and method for making the same May. 11, 1982
4128897 Archival memory media and method for information recording thereon Dec. 5, 1978
4081794 Alloy junction archival memory plane and methods for writing data thereon Mar. 28, 1978
RE29261 Gated silicon diode array camera tube Jun. 7, 1977
4021844 Photosensitive diode array storage target May. 3, 1977
4021375 Method of fabricating polycrystalline selenium imaging devices May. 3, 1977
4010487 Semiconductor arrangement Mar. 1, 1977
3988758 Semiconductor camera-tube target Oct. 26, 1976
3985918 Method for manufacturing a target for an image pickup tube Oct. 12, 1976
3983574 Semiconductor devices having surface state control Sep. 28, 1976
3973270 Charge storage target and method of manufacture Aug. 3, 1976
3969750 Diffused junction capacitor and process for producing the same Jul. 13, 1976
3966512 Method of manufacturing targets of pickup tubes Jun. 29, 1976
3956025 Semiconductor devices having surface state control and method of manufacture May. 11, 1976











 
 
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