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Class Information
Number: 257/915
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With titanium nitride portion or region
Description: Subject matter wherein an active solid-state device includes a portion or region of the device which contains titanium nitride.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
RE41980 Semiconductor interconnect formed over an insulation and having moisture resistant material Dec. 7, 2010
7732307 Method of forming amorphous TiN by thermal chemical vapor deposition (CVD) Jun. 8, 2010
7473637 ALD formed titanium nitride films Jan. 6, 2009
7396765 Method of fabricating a liquid crystal display device Jul. 8, 2008
RE39932 Semiconductor interconnect formed over an insulation and having moisture resistant material Dec. 4, 2007
7091085 Reduced cell-to-cell shorting for memory arrays Aug. 15, 2006
6812512 Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture Nov. 2, 2004
6806572 Structure for contact formation using a silicon-germanium alloy Oct. 19, 2004
6787914 Tungsten-based interconnect that utilizes thin titanium nitride layer Sep. 7, 2004
6737716 Semiconductor device and method of manufacturing the same May. 18, 2004
6703709 Structures formed using silicide cap as an etch stop in multilayer metal processes Mar. 9, 2004
6670267 Formation of tungstein-based interconnect using thin physically vapor deposited titanium nitride layer Dec. 30, 2003
6667537 Semiconductor devices including resistance elements and fuse elements Dec. 23, 2003
6597067 Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration Jul. 22, 2003
6555885 Semiconductor device and method of manufacturing the same Apr. 29, 2003
6525384 Conductor layer nitridation Feb. 25, 2003
6498378 Methods of forming field effect transistors and integrated circuitry Dec. 24, 2002
6483151 Semiconductor device and method of manufacturing the same Nov. 19, 2002
6469388 Structure for contact formation using a silicon-germanium alloy Oct. 22, 2002
6433387 Lateral bipolar transistor Aug. 13, 2002
6429538 Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing Aug. 6, 2002
6362526 Alloy barrier layers for semiconductors Mar. 26, 2002
6359296 Circuit arrangement with at least one capacitor Mar. 19, 2002
6348708 Semiconductor device utilizing a rugged tungsten film Feb. 19, 2002
6337151 Graded composition diffusion barriers for chip wiring applications Jan. 8, 2002
6323537 Capacitor for an integrated circuit Nov. 27, 2001
6319616 Scaled interconnect anodization for high frequency applications Nov. 20, 2001
6255734 Passivated copper line semiconductor device structure Jul. 3, 2001
6242809 Integrated circuit memory devices including titanium nitride bit lines Jun. 5, 2001
6239021 Dual barrier and conductor deposition in a dual damascene process for semiconductors May. 29, 2001
6232656 Semiconductor interconnect formed over an insulation and having moisture resistant material May. 15, 2001
6222240 Salicide and gate dielectric formed from a single layer of refractory metal Apr. 24, 2001
6204560 Titanium nitride diffusion barrier for use in non-silicon technologies and method Mar. 20, 2001
6184571 Method and apparatus for endpointing planarization of a microelectronic substrate Feb. 6, 2001
6157087 Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective layer Dec. 5, 2000
6150720 Semiconductor device having manufacturing wiring structure with buried plugs Nov. 21, 2000
6150689 Semiconductor integrated circuit device and method for manufacturing the same Nov. 21, 2000
6147404 Dual barrier and conductor deposition in a dual damascene process for semiconductors Nov. 14, 2000
6143657 Method of increasing the stability of a copper to copper interconnection process and structure manufactured thereby Nov. 7, 2000
6130481 Semiconductor integrated circuit interconnection structures and method of making the interconnection structures Oct. 10, 2000
6124621 Structure of a spacer Sep. 26, 2000
6120915 Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure Sep. 19, 2000
6121120 Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer Sep. 19, 2000
6114198 Method for forming a high surface area capacitor electrode for DRAM applications Sep. 5, 2000
6114764 Semiconductor device and process for fabricating the same Sep. 5, 2000
6093973 Hard mask for metal patterning Jul. 25, 2000
6091120 Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers Jul. 18, 2000
6083830 Process for manufacturing a semiconductor device Jul. 4, 2000
6075274 Semiconductor devices having gate stack with improved sidewall integrity Jun. 13, 2000
6075291 Structure for contact formation using a silicon-germanium alloy Jun. 13, 2000

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