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Class Information
Number: 257/915
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With titanium nitride portion or region
Description: Subject matter wherein an active solid-state device includes a portion or region of the device which contains titanium nitride.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7396765 |
Method of fabricating a liquid crystal display device |
Jul. 8, 2008 |
| RE39932 |
Semiconductor interconnect formed over an insulation and having moisture resistant material |
Dec. 4, 2007 |
| 7091085 |
Reduced cell-to-cell shorting for memory arrays |
Aug. 15, 2006 |
| 6812512 |
Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture |
Nov. 2, 2004 |
| 6806572 |
Structure for contact formation using a silicon-germanium alloy |
Oct. 19, 2004 |
| 6787914 |
Tungsten-based interconnect that utilizes thin titanium nitride layer |
Sep. 7, 2004 |
| 6737716 |
Semiconductor device and method of manufacturing the same |
May. 18, 2004 |
| 6703709 |
Structures formed using silicide cap as an etch stop in multilayer metal processes |
Mar. 9, 2004 |
| 6670267 |
Formation of tungstein-based interconnect using thin physically vapor deposited titanium nitride layer |
Dec. 30, 2003 |
| 6667537 |
Semiconductor devices including resistance elements and fuse elements |
Dec. 23, 2003 |
| 6597067 |
Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration |
Jul. 22, 2003 |
| 6555885 |
Semiconductor device and method of manufacturing the same |
Apr. 29, 2003 |
| 6525384 |
Conductor layer nitridation |
Feb. 25, 2003 |
| 6498378 |
Methods of forming field effect transistors and integrated circuitry |
Dec. 24, 2002 |
| 6483151 |
Semiconductor device and method of manufacturing the same |
Nov. 19, 2002 |
| 6469388 |
Structure for contact formation using a silicon-germanium alloy |
Oct. 22, 2002 |
| 6433387 |
Lateral bipolar transistor |
Aug. 13, 2002 |
| 6429538 |
Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing |
Aug. 6, 2002 |
| 6362526 |
Alloy barrier layers for semiconductors |
Mar. 26, 2002 |
| 6359296 |
Circuit arrangement with at least one capacitor |
Mar. 19, 2002 |
| 6348708 |
Semiconductor device utilizing a rugged tungsten film |
Feb. 19, 2002 |
| 6337151 |
Graded composition diffusion barriers for chip wiring applications |
Jan. 8, 2002 |
| 6323537 |
Capacitor for an integrated circuit |
Nov. 27, 2001 |
| 6319616 |
Scaled interconnect anodization for high frequency applications |
Nov. 20, 2001 |
| 6255734 |
Passivated copper line semiconductor device structure |
Jul. 3, 2001 |
| 6242809 |
Integrated circuit memory devices including titanium nitride bit lines |
Jun. 5, 2001 |
| 6239021 |
Dual barrier and conductor deposition in a dual damascene process for semiconductors |
May. 29, 2001 |
| 6232656 |
Semiconductor interconnect formed over an insulation and having moisture resistant material |
May. 15, 2001 |
| 6222240 |
Salicide and gate dielectric formed from a single layer of refractory metal |
Apr. 24, 2001 |
| 6204560 |
Titanium nitride diffusion barrier for use in non-silicon technologies and method |
Mar. 20, 2001 |
| 6184571 |
Method and apparatus for endpointing planarization of a microelectronic substrate |
Feb. 6, 2001 |
| 6157087 |
Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective layer |
Dec. 5, 2000 |
| 6150689 |
Semiconductor integrated circuit device and method for manufacturing the same |
Nov. 21, 2000 |
| 6150720 |
Semiconductor device having manufacturing wiring structure with buried plugs |
Nov. 21, 2000 |
| 6147404 |
Dual barrier and conductor deposition in a dual damascene process for semiconductors |
Nov. 14, 2000 |
| 6143657 |
Method of increasing the stability of a copper to copper interconnection process and structure manufactured thereby |
Nov. 7, 2000 |
| 6130481 |
Semiconductor integrated circuit interconnection structures and method of making the interconnection structures |
Oct. 10, 2000 |
| 6124621 |
Structure of a spacer |
Sep. 26, 2000 |
| 6121120 |
Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer |
Sep. 19, 2000 |
| 6120915 |
Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure |
Sep. 19, 2000 |
| 6114198 |
Method for forming a high surface area capacitor electrode for DRAM applications |
Sep. 5, 2000 |
| 6114764 |
Semiconductor device and process for fabricating the same |
Sep. 5, 2000 |
| 6093973 |
Hard mask for metal patterning |
Jul. 25, 2000 |
| 6091120 |
Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers |
Jul. 18, 2000 |
| 6083830 |
Process for manufacturing a semiconductor device |
Jul. 4, 2000 |
| 6075274 |
Semiconductor devices having gate stack with improved sidewall integrity |
Jun. 13, 2000 |
| 6075291 |
Structure for contact formation using a silicon-germanium alloy |
Jun. 13, 2000 |
| 6060784 |
Interconnection layer structure in a semiconductor integrated circuit device having macro cell regions |
May. 9, 2000 |
| 6034001 |
Method for etching of silicon carbide semiconductor using selective etching of different conductivity types |
Mar. 7, 2000 |
| 5998870 |
Wiring structure of semiconductor device and method for manufacturing the same |
Dec. 7, 1999 |
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