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Class Information
Number: 257/914
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Polysilicon containing oxygen, nitrogen, or carbon (e.g., sipos)
Description: Subject matter comprising polycrystalline silicon which contains oxygen, nitrogen, or carbon.

Patents under this class:
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Patent Number Title Of Patent Date Issued
7897517 Method of selectively depositing materials on a substrate using a supercritical fluid Mar. 1, 2011
7777302 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure Aug. 17, 2010
7646067 Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the same Jan. 12, 2010
7573061 Low-k SiC copper diffusion barrier films Aug. 11, 2009
7405482 High-k dielectric film, method of forming the same and related semiconductor device Jul. 29, 2008
7368823 Semiconductor device and method of manufacturing the same May. 6, 2008
7247924 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures Jul. 24, 2007
7235853 Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film Jun. 26, 2007
7042095 Semiconductor device including an interconnect having copper as a main component May. 9, 2006
7034409 Method of eliminating photoresist poisoning in damascene applications Apr. 25, 2006
6960790 Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film Nov. 1, 2005
6737168 Composite material and semiconductor device using the same May. 18, 2004
6730984 Increasing an electrical resistance of a resistor by oxidation or nitridization May. 4, 2004
6667523 Highly linear integrated resistive contact Dec. 23, 2003
6653719 Silicone polymer insulation film on semiconductor substrate Nov. 25, 2003
6635950 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof Oct. 21, 2003
6633082 Semiconductor device and method for manufacturing the semiconductor device Oct. 14, 2003
6525384 Conductor layer nitridation Feb. 25, 2003
6489654 Silicon-on-insulator (SOI) substrate Dec. 3, 2002
6297533 LDMOS structure with via grounded source Oct. 2, 2001
6271566 Semiconductor device having a carbon containing insulation layer formed under the source/drain Aug. 7, 2001
6235559 Thin film transistor with carbonaceous gate dielectric May. 22, 2001
6198157 Semiconductor device having buried boron and carbon regions Mar. 6, 2001
6188101 Flash EPROM cell with reduced short channel effect and method for providing same Feb. 13, 2001
6144094 Semiconductor device including an insulation film and electrode having nitrogen added thereto Nov. 7, 2000
6059553 Integrated circuit dielectrics May. 9, 2000
5959333 Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor Sep. 28, 1999
5936287 Nitrogenated gate structure for improved transistor performance and method for making same Aug. 10, 1999
5923071 Semiconductor device having a semiconductor film of low oxygen concentration Jul. 13, 1999
5874772 Semiconductor device Feb. 23, 1999
5801425 Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure Sep. 1, 1998
5648673 Semiconductor device having metal silicide film on impurity diffused layer or conductive layer Jul. 15, 1997
5635746 Semiconductor device comprising a salicide structure Jun. 3, 1997
5600154 Thin film transistor with particular nitrogen concentration Feb. 4, 1997
5594263 Semiconductor device containing a semiconducting crystalline nanoporous material Jan. 14, 1997
5581092 Gate insulated semiconductor device Dec. 3, 1996
5514902 Semiconductor device having MOS transistor May. 7, 1996
5479031 Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value Dec. 26, 1995
5338968 Method of forming isolated regions of oxide Aug. 16, 1994
5332919 Photodetector with surrounding region Jul. 26, 1994
5313077 Insulated gate field effect transistor and its manufacturing method May. 17, 1994
5309002 Semiconductor device with protruding portion May. 3, 1994
5302840 HEMT type semiconductor device having two semiconductor well layers Apr. 12, 1994
5266816 Polysilicon thin film semiconductor device containing nitrogen Nov. 30, 1993
5252847 Electrical erasable and programmable read-only memory and manufacturing method therefor Oct. 12, 1993
5189504 Semiconductor device of MOS structure having p-type gate electrode Feb. 23, 1993
5119388 Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays Jun. 2, 1992
5019878 Programmable interconnect or cell using silicided MOS transistors May. 28, 1991
4984052 Bonded substrate of semiconductor elements having a high withstand voltage Jan. 8, 1991
4979008 Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components Dec. 18, 1990

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