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Class Information
Number: 257/914
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Polysilicon containing oxygen, nitrogen, or carbon (e.g., sipos)
Description: Subject matter comprising polycrystalline silicon which contains oxygen, nitrogen, or carbon.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7405482 |
High-k dielectric film, method of forming the same and related semiconductor device |
Jul. 29, 2008 |
| 7368823 |
Semiconductor device and method of manufacturing the same |
May. 6, 2008 |
| 7247924 |
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures |
Jul. 24, 2007 |
| 7235853 |
Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film |
Jun. 26, 2007 |
| 7042095 |
Semiconductor device including an interconnect having copper as a main component |
May. 9, 2006 |
| 7034409 |
Method of eliminating photoresist poisoning in damascene applications |
Apr. 25, 2006 |
| 6960790 |
Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film |
Nov. 1, 2005 |
| 6737168 |
Composite material and semiconductor device using the same |
May. 18, 2004 |
| 6730984 |
Increasing an electrical resistance of a resistor by oxidation or nitridization |
May. 4, 2004 |
| 6667523 |
Highly linear integrated resistive contact |
Dec. 23, 2003 |
| 6653719 |
Silicone polymer insulation film on semiconductor substrate |
Nov. 25, 2003 |
| 6635950 |
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof |
Oct. 21, 2003 |
| 6633082 |
Semiconductor device and method for manufacturing the semiconductor device |
Oct. 14, 2003 |
| 6525384 |
Conductor layer nitridation |
Feb. 25, 2003 |
| 6489654 |
Silicon-on-insulator (SOI) substrate |
Dec. 3, 2002 |
| 6297533 |
LDMOS structure with via grounded source |
Oct. 2, 2001 |
| 6271566 |
Semiconductor device having a carbon containing insulation layer formed under the source/drain |
Aug. 7, 2001 |
| 6235559 |
Thin film transistor with carbonaceous gate dielectric |
May. 22, 2001 |
| 6198157 |
Semiconductor device having buried boron and carbon regions |
Mar. 6, 2001 |
| 6188101 |
Flash EPROM cell with reduced short channel effect and method for providing same |
Feb. 13, 2001 |
| 6144094 |
Semiconductor device including an insulation film and electrode having nitrogen added thereto |
Nov. 7, 2000 |
| 6059553 |
Integrated circuit dielectrics |
May. 9, 2000 |
| 5959333 |
Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor |
Sep. 28, 1999 |
| 5936287 |
Nitrogenated gate structure for improved transistor performance and method for making same |
Aug. 10, 1999 |
| 5923071 |
Semiconductor device having a semiconductor film of low oxygen concentration |
Jul. 13, 1999 |
| 5874772 |
Semiconductor device |
Feb. 23, 1999 |
| 5801425 |
Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure |
Sep. 1, 1998 |
| 5648673 |
Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
Jul. 15, 1997 |
| 5635746 |
Semiconductor device comprising a salicide structure |
Jun. 3, 1997 |
| 5600154 |
Thin film transistor with particular nitrogen concentration |
Feb. 4, 1997 |
| 5594263 |
Semiconductor device containing a semiconducting crystalline nanoporous material |
Jan. 14, 1997 |
| 5581092 |
Gate insulated semiconductor device |
Dec. 3, 1996 |
| 5514902 |
Semiconductor device having MOS transistor |
May. 7, 1996 |
| 5479031 |
Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
Dec. 26, 1995 |
| 5338968 |
Method of forming isolated regions of oxide |
Aug. 16, 1994 |
| 5332919 |
Photodetector with surrounding region |
Jul. 26, 1994 |
| 5313077 |
Insulated gate field effect transistor and its manufacturing method |
May. 17, 1994 |
| 5309002 |
Semiconductor device with protruding portion |
May. 3, 1994 |
| 5302840 |
HEMT type semiconductor device having two semiconductor well layers |
Apr. 12, 1994 |
| 5266816 |
Polysilicon thin film semiconductor device containing nitrogen |
Nov. 30, 1993 |
| 5252847 |
Electrical erasable and programmable read-only memory and manufacturing method therefor |
Oct. 12, 1993 |
| 5189504 |
Semiconductor device of MOS structure having p-type gate electrode |
Feb. 23, 1993 |
| 5119388 |
Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
Jun. 2, 1992 |
| 5019878 |
Programmable interconnect or cell using silicided MOS transistors |
May. 28, 1991 |
| 4984052 |
Bonded substrate of semiconductor elements having a high withstand voltage |
Jan. 8, 1991 |
| 4979008 |
Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components |
Dec. 18, 1990 |
| 4951101 |
Diamond shorting contact for semiconductors |
Aug. 21, 1990 |
| 4903112 |
Semiconductor component with contact hole |
Feb. 20, 1990 |
| 4890149 |
Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads |
Dec. 26, 1989 |
| 4875084 |
Optoelectric transducer |
Oct. 17, 1989 |
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