| |
 |
|
Class Information
Number: 257/913
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to absorb or localize unwanted impurities or defects from semiconductors (e.g., heavy metal gettering)
Description: Subject matter including a semiconductor device having means to absorb or localize semiconductor impurities or defects which would adversely affect the performance of the device, e.g., phosphosilicate glass coating to absorb deep level impurities.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7564082 |
Gettering using voids formed by surface transformation |
Jul. 21, 2009 |
| 7459735 |
Solid-state image device |
Dec. 2, 2008 |
| 7397063 |
Semiconductor device |
Jul. 8, 2008 |
| 7342290 |
Semiconductor metal contamination reduction for ultra-thin gate dielectrics |
Mar. 11, 2008 |
| 7242037 |
Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices |
Jul. 10, 2007 |
| 7141822 |
Semiconductor device and method for manufacturing the same |
Nov. 28, 2006 |
| 7126194 |
Method for removing impurities of a semiconductor wafer, semiconductor wafer assembly, and semiconductor device |
Oct. 24, 2006 |
| 7045418 |
Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor |
May. 16, 2006 |
| 6998648 |
Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant |
Feb. 14, 2006 |
| 6967391 |
Electronic control device |
Nov. 22, 2005 |
| 6946711 |
Semiconductor device |
Sep. 20, 2005 |
| 6828690 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
Dec. 7, 2004 |
| 6709955 |
Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method |
Mar. 23, 2004 |
| 6635950 |
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof |
Oct. 21, 2003 |
| 6465873 |
Semiconductor gettering structures |
Oct. 15, 2002 |
| 6452271 |
Interconnect component for a semiconductor die including a ruthenium layer and a method for its fabrication |
Sep. 17, 2002 |
| 6452219 |
Insulated gate bipolar transistor and method of fabricating the same |
Sep. 17, 2002 |
| 6313507 |
SOI semiconductor device capable of preventing floating body effect |
Nov. 6, 2001 |
| 6300680 |
Semiconductor substrate and manufacturing method thereof |
Oct. 9, 2001 |
| 6284384 |
Epitaxial silicon wafer with intrinsic gettering |
Sep. 4, 2001 |
| 6271541 |
Semiconductor device with high gettering capability to impurity present in semiconductor layer of SOI substrate |
Aug. 7, 2001 |
| 6255719 |
Semiconductor device including thermal neutron absorption material |
Jul. 3, 2001 |
| 6252294 |
Semiconductor device and semiconductor storage device |
Jun. 26, 2001 |
| 6236104 |
Silicon on insulator structure from low defect density single crystal silicon |
May. 22, 2001 |
| 6232205 |
Method for producing a semiconductor device |
May. 15, 2001 |
| 6229196 |
Semiconductor device and fabrication method thereof |
May. 8, 2001 |
| 6222252 |
Semiconductor substrate and method for producing the same |
Apr. 24, 2001 |
| 6198157 |
Semiconductor device having buried boron and carbon regions |
Mar. 6, 2001 |
| 6180220 |
Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
Jan. 30, 2001 |
| 6120749 |
Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same |
Sep. 19, 2000 |
| 6066893 |
Contaminant resistant barriers to prevent outgassing |
May. 23, 2000 |
| 5993493 |
Method of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafers |
Nov. 30, 1999 |
| 5994761 |
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
Nov. 30, 1999 |
| 5973386 |
Semiconductor substrate having silicon oxide layers formed between polysilicon layers |
Oct. 26, 1999 |
| 5973370 |
Preventing boron penetration through thin gate oxide of P-channel devices in advanced CMOS technology |
Oct. 26, 1999 |
| 5949115 |
Semiconductor device including nickel formed on a crystalline silicon substrate |
Sep. 7, 1999 |
| 5939770 |
Semiconductor device and its manufacturing method |
Aug. 17, 1999 |
| 5929507 |
Gettering regions and methods of forming gettering regions within a semiconductor wafer |
Jul. 27, 1999 |
| 5883403 |
Power semiconductor device |
Mar. 16, 1999 |
| 5757063 |
Semiconductor device having an extrinsic gettering film |
May. 26, 1998 |
| 5753943 |
Insulated gate type field effect transistor and method of manufacturing the same |
May. 19, 1998 |
| 5734195 |
Semiconductor wafer for epitaxially grown devices having a sub-surface getter region |
Mar. 31, 1998 |
| 5698891 |
Semiconductor device and method for manufacturing the same |
Dec. 16, 1997 |
| 5652459 |
Moisture guard ring for integrated circuit applications |
Jul. 29, 1997 |
| 5561316 |
Epitaxial silicon starting material |
Oct. 1, 1996 |
| 5552607 |
Imager device with integral address line repair segments |
Sep. 3, 1996 |
| 5539245 |
Semiconductor substrate having a gettering layer |
Jul. 23, 1996 |
| 5498898 |
Semiconductor device using element isolation by field shield |
Mar. 12, 1996 |
| 5482869 |
Gettering of unwanted metal impurity introduced into semiconductor substrate during trench formation |
Jan. 9, 1996 |
| 5410162 |
Apparatus for and method of rapid testing of semiconductor components at elevated temperature |
Apr. 25, 1995 |
|
|
|
