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Class Information
Number: 257/912
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Charge transfer device using both electron and hole signal carriers
Description: Subject matter wherein a charge transfer device* uses both electron and hole carriers in the same transfer or storage regions of the charge transfer device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6815719 |
Field effect transistor and image display apparatus using the same |
Nov. 9, 2004 |
| 6566694 |
Heterojunction bipolar transferred electron tetrode |
May. 20, 2003 |
| 6437378 |
Charge coupled devices including charge signal amplifiers therein |
Aug. 20, 2002 |
| 6417531 |
Charge transfer device with final potential well close to floating diffusion region |
Jul. 9, 2002 |
| 5892292 |
Getterer for multi-layer wafers and method for making same |
Apr. 6, 1999 |
| 5627388 |
CCD-solid state image sensor using electron and hole signal charges and method for processing signal thereof |
May. 6, 1997 |
| 5479035 |
Ionic liquid-channel charge-coupled device |
Dec. 26, 1995 |
| 5374834 |
Ionic liquid-channel charge-coupled device |
Dec. 20, 1994 |
| 5338968 |
Method of forming isolated regions of oxide |
Aug. 16, 1994 |
| 5309004 |
Heterostructure acoustic charge transport device having electron and hole transport |
May. 3, 1994 |
| 5108843 |
Thin film semiconductor and process for producing the same |
Apr. 28, 1992 |
| 5086328 |
Photo-anodic oxide surface passivation for semiconductors |
Feb. 4, 1992 |
| 5012083 |
Long wavelength infrared detector with heterojunction |
Apr. 30, 1991 |
| 4962303 |
Infrared image detector utilizing Schottky barrier junctions |
Oct. 9, 1990 |
| 4860067 |
Semiconductor heterostructure adapted for low temperature operation |
Aug. 22, 1989 |
| 4814292 |
Process of fabricating a semiconductor device involving densification and recrystallization of amorphous silicon |
Mar. 21, 1989 |
| 4778776 |
Passivation with a low oxygen interface |
Oct. 18, 1988 |
| 4468684 |
High-density charge-coupled devices with complementary adjacent channels |
Aug. 28, 1984 |
| 4223329 |
Bipolar dual-channel charge-coupled device |
Sep. 16, 1980 |
| 4184171 |
Light emitting diodes which emit in the infrared |
Jan. 15, 1980 |
| 4075043 |
Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique |
Feb. 21, 1978 |
| 3996599 |
Image detector with background suppression |
Dec. 7, 1976 |
| 3975755 |
Stable non-crystalline material for switching devices |
Aug. 17, 1976 |
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