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Class Information
Number: 257/910
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Diode arrays (e.g., diode read-only memory array)
Description: A repeating geometric arrangement of electronic devices which have two terminals and an asymmetrical or nonlinear voltage-current characteristic.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7443008 |
Lateral programmable polysilicon structure incorporating polysilicon blocking diode |
Oct. 28, 2008 |
| 7349248 |
Non-volatile memory |
Mar. 25, 2008 |
| 7339186 |
IC chip with nanowires |
Mar. 4, 2008 |
| 7321153 |
Semiconductor memory device and corresponding programming method |
Jan. 22, 2008 |
| 7279725 |
Vertical diode structures |
Oct. 9, 2007 |
| 7233024 |
Three-dimensional memory device incorporating segmented bit line memory array |
Jun. 19, 2007 |
| 7227238 |
Integrated fuse with regions of different doping within the fuse neck |
Jun. 5, 2007 |
| 7166875 |
Vertical diode structures |
Jan. 23, 2007 |
| 7145255 |
Lateral programmable polysilicon structure incorporating polysilicon blocking diode |
Dec. 5, 2006 |
| 7105858 |
Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density |
Sep. 12, 2006 |
| 7005727 |
Low cost programmable CPU package/substrate |
Feb. 28, 2006 |
| 6992365 |
Reducing leakage currents in memories with phase-change material |
Jan. 31, 2006 |
| 6972476 |
Diode and diode string structure |
Dec. 6, 2005 |
| 6956240 |
Light emitting device |
Oct. 18, 2005 |
| 6879020 |
Semiconductor device |
Apr. 12, 2005 |
| 6867478 |
Semiconductor device having improved alignment of an electrode terminal on a semiconductor chip and a conductor coupled to the electrode terminal |
Mar. 15, 2005 |
| 6797992 |
Apparatus and method for fabricating a high reverse voltage semiconductor device |
Sep. 28, 2004 |
| 6774456 |
Configuration of fuses in semiconductor structures with Cu metallization |
Aug. 10, 2004 |
| 6770948 |
Integrated fuse with regions of different doping within the fuse neck |
Aug. 3, 2004 |
| 6603153 |
Fast recovery diode and method for its manufacture |
Aug. 5, 2003 |
| 6552409 |
Techniques for addressing cross-point diode memory arrays |
Apr. 22, 2003 |
| 6531757 |
Semiconductor device fuse box with fuses of uniform depth |
Mar. 11, 2003 |
| 6515345 |
Transient voltage suppressor with diode overlaying another diode for conserving space |
Feb. 4, 2003 |
| 6496053 |
Corrosion insensitive fusible link using capacitance sensing for semiconductor devices |
Dec. 17, 2002 |
| 6384435 |
Data cell region and system region for a semiconductor memory |
May. 7, 2002 |
| 6380636 |
Nonvolatile semiconductor memory device having an array structure suitable to high-density integrationization |
Apr. 30, 2002 |
| 6362514 |
Semiconductor device |
Mar. 26, 2002 |
| 6329678 |
Semiconductor memory array |
Dec. 11, 2001 |
| 6303975 |
Low noise, high frequency solid state diode |
Oct. 16, 2001 |
| 6208012 |
Zener zap diode and method of manufacturing the same |
Mar. 27, 2001 |
| 6064100 |
Product for ROM components having a silicon controlled rectifier structure |
May. 16, 2000 |
| 6015995 |
ROM diode structure |
Jan. 18, 2000 |
| 6008522 |
Structure of buried bit line |
Dec. 28, 1999 |
| 5997152 |
Light emitting element module and printer head using the same |
Dec. 7, 1999 |
| 5898211 |
Laser diode package with heat sink |
Apr. 27, 1999 |
| 5854102 |
Vertical diode structures with low series resistance |
Dec. 29, 1998 |
| 5825069 |
High-density semiconductor read-only memory device |
Oct. 20, 1998 |
| 5663589 |
Current regulating semiconductor integrated circuit device and fabrication method of the same |
Sep. 2, 1997 |
| 5643816 |
High-density programmable read-only memory and the process for its fabrication |
Jul. 1, 1997 |
| 5616946 |
VLSI ROM programmed by selective diode formation |
Apr. 1, 1997 |
| 5593902 |
Method of making photodiodes for low dark current operation having geometric enhancement |
Jan. 14, 1997 |
| 5561315 |
Programmable semiconductor device with high breakdown voltage and high-density programmable semiconductor memory having such a semiconductor device |
Oct. 1, 1996 |
| 5502326 |
Semiconductor device provided having a programmable element with a high-conductivity buried contact region |
Mar. 26, 1996 |
| 5471087 |
Semi-monolithic memory with high-density cell configurations |
Nov. 28, 1995 |
| 5428232 |
Field effect transistor apparatus |
Jun. 27, 1995 |
| 5416343 |
Semiconductor device provided with a number of programmable elements |
May. 16, 1995 |
| 5319228 |
Semiconductor memory device with trench-type capacitor |
Jun. 7, 1994 |
| 5311039 |
PROM and ROM memory cells |
May. 10, 1994 |
| 5257224 |
Semiconductor device with multiple layers of memory cell arrays |
Oct. 26, 1993 |
| 5250831 |
DRAM device having a memory cell array of a divided bit line type |
Oct. 5, 1993 |
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