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Class Information
Number: 257/906
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Dram with capacitor electrodes used for accessing (e.g., bit line is capacitor plate)
Description: Subject matter comprising a dynamic random access memory element having an electrode which forms one plate of a storage capacitor, which electrode is adapted to be supplied with varying electrical signals to get information into or out of the memory element.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449742 |
Memory device with active layer of dendrimeric material |
Nov. 11, 2008 |
| 7443032 |
Memory device with chemical vapor deposition of titanium for titanium silicide contacts |
Oct. 28, 2008 |
| 7425724 |
Memory device and method of production and method of use of same and semiconductor device and method of production of same |
Sep. 16, 2008 |
| 7378719 |
Low leakage MIM capacitor |
May. 27, 2008 |
| 7375376 |
Semiconductor display device and method of manufacturing the same |
May. 20, 2008 |
| 7348234 |
Methods of forming capacitor constructions |
Mar. 25, 2008 |
| 7288806 |
DRAM arrays |
Oct. 30, 2007 |
| 7282803 |
Integrated electronic circuit comprising a capacitor and a planar interference inhibiting metallic screen |
Oct. 16, 2007 |
| 7276725 |
Bit line barrier metal layer for semiconductor device and process for preparing the same |
Oct. 2, 2007 |
| 7276750 |
Semiconductor device having trench capacitor and fabrication method for the same |
Oct. 2, 2007 |
| 7268384 |
Semiconductor substrate having first and second pairs of word lines |
Sep. 11, 2007 |
| 7257043 |
Isolation device over field in a memory device |
Aug. 14, 2007 |
| 7247902 |
Semiconductor device and method of manufacturing the same |
Jul. 24, 2007 |
| 7226845 |
Semiconductor constructions, and methods of forming capacitor devices |
Jun. 5, 2007 |
| 7199415 |
Conductive container structures having a dielectric cap |
Apr. 3, 2007 |
| 7170125 |
Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or ruthenium |
Jan. 30, 2007 |
| 7135731 |
Vertical DRAM and fabrication method thereof |
Nov. 14, 2006 |
| 7041896 |
Housing for electronic apparatus |
May. 9, 2006 |
| 7034336 |
Capacitorless 1-transistor DRAM cell and fabrication method |
Apr. 25, 2006 |
| 7034408 |
Memory device and method of manufacturing a memory device |
Apr. 25, 2006 |
| 7022579 |
Method for filling via with metal |
Apr. 4, 2006 |
| 7020039 |
Isolation device over field in a memory device |
Mar. 28, 2006 |
| 6992343 |
Semiconductor memory device |
Jan. 31, 2006 |
| 6979849 |
Memory cell having improved interconnect |
Dec. 27, 2005 |
| 6967348 |
Signal sharing circuit with microelectric die isolation features |
Nov. 22, 2005 |
| 6930341 |
Integrated circuits including insulating spacers that extend beneath a conductive line |
Aug. 16, 2005 |
| 6924524 |
Integrated circuit memory devices |
Aug. 2, 2005 |
| 6903414 |
Semiconductor memory having channel regions at sides of a trench |
Jun. 7, 2005 |
| 6900486 |
Ferroelectric memory and method for manufacturing same |
May. 31, 2005 |
| 6872627 |
Selective formation of metal gate for dual gate oxide application |
Mar. 29, 2005 |
| 6853052 |
Semiconductor device having a buffer layer against stress |
Feb. 8, 2005 |
| 6849959 |
Method of fabricating semiconductor device |
Feb. 1, 2005 |
| 6849889 |
Semiconductor device having storage node contact plug of DRAM (dynamic random access memory) |
Feb. 1, 2005 |
| 6847075 |
Semiconductor integrated circuit apparatus and fabrication method thereof |
Jan. 25, 2005 |
| 6834019 |
Isolation device over field in a memory device |
Dec. 21, 2004 |
| 6797557 |
Methods and systems for forming embedded DRAM for an MIM capacitor |
Sep. 28, 2004 |
| 6794705 |
Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials |
Sep. 21, 2004 |
| 6791137 |
Semiconductor integrated circuit device and process for manufacturing the same |
Sep. 14, 2004 |
| 6777735 |
Semiconductor memory device having a metal plug or a landing pad |
Aug. 17, 2004 |
| 6744089 |
Self-aligned lateral-transistor DRAM cell structure |
Jun. 1, 2004 |
| 6740918 |
Semiconductor memory device |
May. 25, 2004 |
| 6737690 |
Ferroelectronic memory and electronic apparatus |
May. 18, 2004 |
| 6727541 |
Semiconductor memory device having a trench capacitor |
Apr. 27, 2004 |
| 6710425 |
Structure to increase density of MIM capacitors between adjacent metal layers in an integrated circuit |
Mar. 23, 2004 |
| 6707092 |
Semiconductor memory having longitudinal cell structure |
Mar. 16, 2004 |
| 6707090 |
DRAM cell constructions |
Mar. 16, 2004 |
| 6707088 |
Method of forming integrated circuitry, method of forming a capacitor, method of forming DRAM integrated circuitry and DRAM integrated category |
Mar. 16, 2004 |
| 6707079 |
Twin MONOS cell fabrication method and array organization |
Mar. 16, 2004 |
| 6700201 |
Reduction of sector connecting line capacitance using staggered metal lines |
Mar. 2, 2004 |
| 6661044 |
Method of manufacturing MOSEFT and structure thereof |
Dec. 9, 2003 |
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