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Class Information
Number: 257/905
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Plural dram cells share common contact or common trench
Description: Subject matter comprising plural dynamic random access memory elements which share an electrical contact or trench.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449763 |
Method of fabricating cell of nonvolatile memory device with floating gate |
Nov. 11, 2008 |
| 7394156 |
Semiconductor integrated circuit device and method of producing the same |
Jul. 1, 2008 |
| 7355230 |
Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array |
Apr. 8, 2008 |
| 7348640 |
Memory device |
Mar. 25, 2008 |
| 7339222 |
Method for determining wordline critical dimension in a memory array and related structure |
Mar. 4, 2008 |
| 7326985 |
Method for fabricating metallic bit-line contacts |
Feb. 5, 2008 |
| 7298002 |
Hemispherical silicon grain capacitor with variable grain size |
Nov. 20, 2007 |
| 7268384 |
Semiconductor substrate having first and second pairs of word lines |
Sep. 11, 2007 |
| 7247902 |
Semiconductor device and method of manufacturing the same |
Jul. 24, 2007 |
| 7223992 |
Thermal conducting trench in a semiconductor structure |
May. 29, 2007 |
| 7208794 |
High-density NROM-FINFET |
Apr. 24, 2007 |
| 7199409 |
Device for subtracting or adding charge in a charge-coupled device |
Apr. 3, 2007 |
| 7189586 |
Test key for monitoring gate conductor to deep trench misalignment |
Mar. 13, 2007 |
| 7180121 |
Semiconductor device and method of manufacturing the same |
Feb. 20, 2007 |
| 7135731 |
Vertical DRAM and fabrication method thereof |
Nov. 14, 2006 |
| 7126154 |
Test structure for a single-sided buried strap DRAM memory cell array |
Oct. 24, 2006 |
| 7105881 |
DRAMS constructions and DRAM devices |
Sep. 12, 2006 |
| 7102184 |
Image device and photodiode structure |
Sep. 5, 2006 |
| 7091544 |
Trench capacitor dynamic random access memory featuring structurally independent symmetric active areas |
Aug. 15, 2006 |
| 7034408 |
Memory device and method of manufacturing a memory device |
Apr. 25, 2006 |
| 7022579 |
Method for filling via with metal |
Apr. 4, 2006 |
| 6992343 |
Semiconductor memory device |
Jan. 31, 2006 |
| 6974987 |
Semiconductor device |
Dec. 13, 2005 |
| 6967348 |
Signal sharing circuit with microelectric die isolation features |
Nov. 22, 2005 |
| 6936881 |
Capacitor that includes high permittivity capacitor dielectric |
Aug. 30, 2005 |
| 6921939 |
Power MOSFET and method for forming same using a self-aligned body implant |
Jul. 26, 2005 |
| 6911687 |
Buried bit line-field isolation defined active semiconductor areas |
Jun. 28, 2005 |
| 6885044 |
Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates |
Apr. 26, 2005 |
| 6872627 |
Selective formation of metal gate for dual gate oxide application |
Mar. 29, 2005 |
| 6861691 |
Selective polysilicon stud growth |
Mar. 1, 2005 |
| 6838722 |
Structures of and methods of fabricating trench-gated MIS devices |
Jan. 4, 2005 |
| 6794698 |
Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
Sep. 21, 2004 |
| 6791132 |
Memory semiconductor device with reduced sense amplifier area |
Sep. 14, 2004 |
| 6791200 |
Semiconductor memory device |
Sep. 14, 2004 |
| 6784474 |
Semiconductor memory device and method for fabricating the same |
Aug. 31, 2004 |
| 6744089 |
Self-aligned lateral-transistor DRAM cell structure |
Jun. 1, 2004 |
| 6740555 |
Semiconductor structures and manufacturing methods |
May. 25, 2004 |
| 6740918 |
Semiconductor memory device |
May. 25, 2004 |
| 6727541 |
Semiconductor memory device having a trench capacitor |
Apr. 27, 2004 |
| 6707092 |
Semiconductor memory having longitudinal cell structure |
Mar. 16, 2004 |
| 6700150 |
Self-aligned vertical transistor DRAM structure |
Mar. 2, 2004 |
| 6677630 |
Semiconductor device having ferroelectric film and manufacturing method thereof |
Jan. 13, 2004 |
| 6649959 |
Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby |
Nov. 18, 2003 |
| 6624460 |
Memory device with low resistance buried bit lines |
Sep. 23, 2003 |
| 6621129 |
MROM memory cell structure for storing multi level bit information |
Sep. 16, 2003 |
| 6608342 |
Container capacitor structure and method of formation thereof |
Aug. 19, 2003 |
| 6551846 |
Semiconductor memory device capable of correctly and surely effecting voltage stress acceleration |
Apr. 22, 2003 |
| 6545310 |
Non-volatile memory with a serial transistor structure with isolated well and method of operation |
Apr. 8, 2003 |
| 6518612 |
Semiconductor memory device using hemispherical grain silicon for bottom electrodes |
Feb. 11, 2003 |
| 6518589 |
Dual mode FET & logic circuit having negative differential resistance mode |
Feb. 11, 2003 |
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