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Class Information
Number: 257/902
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Fet with metal source region
Description: Subject matter including a field effect transistor with a source region that comprises a metal material (e.g., a Schottky barrier or ohmic contact to the channel region).










Patents under this class:

Patent Number Title Of Patent Date Issued
8217386 Short channel vertical FETs Jul. 10, 2012
8183611 Spin transistor using N-type and P-type double carrier supply layer structure May. 22, 2012
8120072 JFET devices with increased barrier height and methods of making same Feb. 21, 2012
8035141 Bi-layer nFET embedded stressor element and integration to enhance drive current Oct. 11, 2011
7960734 FinFET field effect transistor insulated from the substrate Jun. 14, 2011
7608901 Spin transistor using stray magnetic field Oct. 27, 2009
7560758 MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same Jul. 14, 2009
7259432 Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device Aug. 21, 2007
7081646 Semiconductor device and method of fabricating same Jul. 25, 2006
6828610 Method for modifying switching field characteristics of magnetic tunnel junctions Dec. 7, 2004
6809379 Field effect transistor and method for producing a field effect transistor Oct. 26, 2004
6713820 Semiconductor device Mar. 30, 2004
6180987 Integrated circuit transistor with low-resistivity source/drain structures at least partially recessed within a dielectric base layer Jan. 30, 2001
6130462 Vertical poly load device in 4T SRAM technology Oct. 10, 2000
6057583 Transistor with low resistance metal source and drain vertically displaced from the channel May. 2, 2000
5994727 High performance gaas field effect transistor structure Nov. 30, 1999
5962893 Schottky tunneling device Oct. 5, 1999
5942790 Charge effect transistor and a method for manufacturing the same Aug. 24, 1999
5663584 Schottky barrier MOSFET systems and fabrication thereof Sep. 2, 1997
5428234 Semiconductor device Jun. 27, 1995
5319237 Power semiconductor component Jun. 7, 1994
5177568 Tunnel injection semiconductor devices with Schottky barriers Jan. 5, 1993
5049953 Schottky tunnel transistor device Sep. 17, 1991
5040034 Semiconductor device Aug. 13, 1991
4675713 MOS transistor Jun. 23, 1987
4665414 Schottky-barrier MOS devices May. 12, 1987
4631563 Metal oxide semiconductor field-effect transistor with metal source region Dec. 23, 1986
4622735 Method for manufacturing a semiconductor device utilizing self-aligned silicide regions Nov. 18, 1986
4432008 Gold-doped IC resistor region Feb. 14, 1984
4271424 Electrical contact connected with a semiconductor region which is short circuited with the substrate through said region Jun. 2, 1981











 
 
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