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Class Information
Number: 257/900
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Mosfet type gate sidewall insulating spacer
Description: Subject matter wherein a metal oxide semiconductor field effect transistor with a gate electrode includes a relatively thick layer of electrically insulating material along the side wall of the gate electrode and wherein the source or drain region of the transistor has a distinct portion which is distant from the gate electrode and is aligned with the edge of the insulating material, so that the source or drain region is spaced from the gate electrode by the thickness of the insulating material.


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
7459758 Transistor structure and method for making same Dec. 2, 2008
7456508 Hosting structure of nanometric elements and corresponding manufacturing method Nov. 25, 2008
7446354 Power semiconductor device having improved performance and method Nov. 4, 2008
7439124 Method of manufacturing a semiconductor device and semiconductor device Oct. 21, 2008
7436029 High performance CMOS device structures and method of manufacture Oct. 14, 2008
7435683 Apparatus and method for selectively recessing spacers on multi-gate devices Oct. 14, 2008
RE40486 Self-aligned non-volatile memory cell Sep. 9, 2008
7405450 Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon Jul. 29, 2008
7378712 Gate stacks May. 27, 2008
7375392 Gate structures having sidewall spacers formed using selective deposition May. 20, 2008
7375394 Fringing field induced localized charge trapping memory May. 20, 2008
7358571 Isolation spacer for thin SOI devices Apr. 15, 2008
7345296 Nanotube transistor and rectifying devices Mar. 18, 2008
7339230 Structure and method for making high density mosfet circuits with different height contact lines Mar. 4, 2008
7321155 Offset spacer formation for strained channel CMOS transistor Jan. 22, 2008
7301219 Electrically erasable programmable read only memory (EEPROM) cell and method for making the same Nov. 27, 2007
7291895 Integrated circuitry Nov. 6, 2007
7279746 High performance CMOS device structures and method of manufacture Oct. 9, 2007
7279758 N-channel MOSFETs comprising dual stressors, and methods for forming the same Oct. 9, 2007
7271414 Semiconductor device and method for fabricating the same Sep. 18, 2007
7265419 Semiconductor memory device with cell transistors having electrically floating channel bodies to store data Sep. 4, 2007
7256081 Structure and method to induce strain in a semiconductor device channel with stressed film under the gate Aug. 14, 2007
7253481 High performance MOS device with graded silicide Aug. 7, 2007
7253525 Semiconductor device including contact holes between adjacent conductor patterns and method for fabricating the same Aug. 7, 2007
7242063 Symmetric non-intrusive and covert technique to render a transistor permanently non-operable Jul. 10, 2007
7227230 Low-K gate spacers by fluorine implantation Jun. 5, 2007
7211872 Device having recessed spacers for improved salicide resistance on polysilicon gates May. 1, 2007
7208803 Method of forming a raised source/drain and a semiconductor device employing the same Apr. 24, 2007
7205612 Fully silicided NMOS device for electrostatic discharge protection Apr. 17, 2007
7187031 Semiconductor device having a low dielectric constant film and manufacturing method thereof Mar. 6, 2007
7183662 Memory devices with memory cell transistors having gate sidewell spacers with different dielectric properties Feb. 27, 2007
7157374 Method for removing a cap from the gate of an embedded silicon germanium semiconductor device Jan. 2, 2007
7148552 High voltage transistor having side-wall width different from side-wall width of a low voltage transistor Dec. 12, 2006
7135707 Semiconductor device having insulated gate electrode Nov. 14, 2006
7132704 Transistor sidewall spacer stress modulation Nov. 7, 2006
7122833 Semiconductor integrated circuit and method of fabricating same Oct. 17, 2006
7119435 Semiconductor device with source/drain extension layer Oct. 10, 2006
7112859 Stepped tip junction with spacer layer Sep. 26, 2006
7112847 Smooth fin topology in a FinFET device Sep. 26, 2006
7105934 FinFET with low gate capacitance and low extrinsic resistance Sep. 12, 2006
7094636 Method of forming a conductive line Aug. 22, 2006
7091567 Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same Aug. 15, 2006
7081652 Semiconductor device having a side wall insulating film and a manufacturing method thereof Jul. 25, 2006
7078287 Method of manufacturing semiconductor device Jul. 18, 2006
7042107 Scalable two transistor memory devices May. 9, 2006
7042050 Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof May. 9, 2006
7034407 Semiconductor device and method for fabricating the same Apr. 25, 2006
7023064 Temperature stable metal nitride gate electrode Apr. 4, 2006
7015542 MONOS memory device Mar. 21, 2006
7015567 Method for fabricating a semiconductor structure using a protective layer, and semiconductor structure Mar. 21, 2006

1 2 3 4 5 6 7 8 9


 
 
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