Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Patents

Resources

Home

Browse by:

Browse by Category: Main > Physics

Class Information
Number: 257/9
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
Description: Subject matter wherein the active material is a thin physical layer of material located between materials which have different electrical properties than the thin layer and wherein the thin active physical layer is (1) a potential well layer thin enough to establish discrete quantum energy levels or (2) a potential barrier layer thin enough to permit quantum mechanical tunneling or (3) a layer thin enough to permit carrier transmission therethrough with substantially no scattering of the carriers.

Sub-classes under this class:

Class Number	Class Name	Patents
257/29	Ballistic transport device (e.g., hot electron transistor)	75
257/12	Heterojunction	266
257/10	Low workfunction layer for electron emission (e.g., photocathode electron emissive layer)	332
257/28	Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)	83
257/30	Tunneling through region of reduced conductivity	220

Patents under this class:

1 2 3 4 5 6

Patent Number	Title Of Patent	Date Issued
5021841	Semiconductor device with controlled negative differential resistance characteristic	Jun. 4, 1991
4926230	Multiple junction solar power generation cells	May. 15, 1990
4903088	Semiconductor laser with large bandgap connection layer	Feb. 20, 1990
4882609	Semiconductor devices with at least one monoatomic layer of doping atoms	Nov. 21, 1989
4633287	Semiconductor photoelectric conversion device	Dec. 30, 1986
4598304	Thin film devices of silicon	Jul. 1, 1986
4583110	Intermetallic semiconductor ohmic contact	Apr. 15, 1986
4447823	SOS p--n Junction device with a thick oxide wiring insulation layer	May. 8, 1984
4410902	Planar doped barrier semiconductor device	Oct. 18, 1983
4119992	Integrated circuit structure and method for making same	Oct. 10, 1978
3958266	Deep depletion insulated gate field effect transistors	May. 18, 1976