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Class Information
Number: 257/9
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
Description: Subject matter wherein the active material is a thin physical layer of material located between materials which have different electrical properties than the thin layer and wherein the thin active physical layer is (1) a potential well layer thin enough to establish discrete quantum energy levels or (2) a potential barrier layer thin enough to permit quantum mechanical tunneling or (3) a layer thin enough to permit carrier transmission therethrough with substantially no scattering of the carriers.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6023124 |
Electron emission device and display device using the same |
Feb. 8, 2000 |
| 5982014 |
Microfabricated silicon thermopile sensor |
Nov. 9, 1999 |
| 5962863 |
Laterally disposed nanostructures of silicon on an insulating substrate |
Oct. 5, 1999 |
| 5908699 |
Cold cathode electron emitter and display structure |
Jun. 1, 1999 |
| 5886380 |
Semiconductor memory elements having quantum box floating gates |
Mar. 23, 1999 |
| 5882952 |
Semiconductor device including quantum wells or quantum wires and method of making semiconductor device |
Mar. 16, 1999 |
| 5883396 |
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
Mar. 16, 1999 |
| 5852303 |
Amorphous matrices having dispersed cesium |
Dec. 22, 1998 |
| 5847406 |
Thin film field effect transistor |
Dec. 8, 1998 |
| 5838021 |
Single electron digital circuits |
Nov. 17, 1998 |
| 5747827 |
Optoelectronic semiconductor device having a miniband |
May. 5, 1998 |
| 5719894 |
Extended wavelength strained layer lasers having nitrogen disposed therein |
Feb. 17, 1998 |
| 5665979 |
Coulomb-blockade element and method of manufacturing the same |
Sep. 9, 1997 |
| 5663570 |
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
Sep. 2, 1997 |
| 5650634 |
Interchannel nonequilibrium confined-phonon exchange device |
Jul. 22, 1997 |
| 5596205 |
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
Jan. 21, 1997 |
| 5581091 |
Nanoelectric devices |
Dec. 3, 1996 |
| 5572040 |
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
Nov. 5, 1996 |
| 5541422 |
Tunnel diode with several permanent switching states |
Jul. 30, 1996 |
| 5530263 |
Three dot computing elements |
Jun. 25, 1996 |
| 5508555 |
Thin film field effect transistor having a doped sub-channel region |
Apr. 16, 1996 |
| 5489539 |
Method of making quantum well structure with self-aligned gate |
Feb. 6, 1996 |
| 5486704 |
Semiconductor device and electronic device by use of the semiconductor |
Jan. 23, 1996 |
| 5481397 |
Quantum well structures |
Jan. 2, 1996 |
| 5426311 |
Solid-state variable-conductance device |
Jun. 20, 1995 |
| 5422497 |
Superconducting device having layered structure composed of oxide thin film and insulator thin film |
Jun. 6, 1995 |
| 5401980 |
2D/1D junction device as a Coulomb blockade gate |
Mar. 28, 1995 |
| 5384517 |
Electroluminescent element including a thin-film transistor for charge control |
Jan. 24, 1995 |
| 5374831 |
Quantum well phonon modulator |
Dec. 20, 1994 |
| 5373186 |
Bipolar transistor with monoatomic base layer between emitter and collector layers |
Dec. 13, 1994 |
| 5367274 |
Quantum wave guiding electronic switch |
Nov. 22, 1994 |
| 5342804 |
Method of fabrication of devices with different operating characteristics through a single selective epitaxial growth process |
Aug. 30, 1994 |
| 5329150 |
Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers |
Jul. 12, 1994 |
| 5317168 |
Superconducting field effect transistor |
May. 31, 1994 |
| 5270225 |
Method of making a resonant tunneling semiconductor device |
Dec. 14, 1993 |
| 5244828 |
Method of fabricating a quantum device |
Sep. 14, 1993 |
| 5229845 |
Electroconductive thin film of organic charge transfer complexes of bisethylenedithiatetrathiafulvalene |
Jul. 20, 1993 |
| 5225895 |
Velocity-modulation transistor with quantum well wire layer |
Jul. 6, 1993 |
| 5216260 |
Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers |
Jun. 1, 1993 |
| 5194922 |
Luminescent semiconductor element |
Mar. 16, 1993 |
| 5191453 |
Active matrix substrate for liquid-crystal display and method of fabricating the active matrix substrate |
Mar. 2, 1993 |
| 5179615 |
Optical waveguide having a variable refractive index and an optical laser having such an optical waveguide |
Jan. 12, 1993 |
| 5173753 |
Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance |
Dec. 22, 1992 |
| 5159413 |
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
Oct. 27, 1992 |
| 5140001 |
Integrated microelectronic assembly comprising photoconductor with superconducting leads |
Aug. 18, 1992 |
| 5138191 |
Photoemitter |
Aug. 11, 1992 |
| 5101242 |
Thin film transistor |
Mar. 31, 1992 |
| 5060234 |
Injection laser with at least one pair of monoatomic layers of doping atoms |
Oct. 22, 1991 |
| 5021841 |
Semiconductor device with controlled negative differential resistance characteristic |
Jun. 4, 1991 |
| 4926230 |
Multiple junction solar power generation cells |
May. 15, 1990 |
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