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Class Information
Number: 257/9
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
Description: Subject matter wherein the active material is a thin physical layer of material located between materials which have different electrical properties than the thin layer and wherein the thin active physical layer is (1) a potential well layer thin enough to establish discrete quantum energy levels or (2) a potential barrier layer thin enough to permit quantum mechanical tunneling or (3) a layer thin enough to permit carrier transmission therethrough with substantially no scattering of the carriers.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6559471 |
Quantum well infrared photodetector and method for fabricating same |
May. 6, 2003 |
| 6531414 |
Method of oxidizing strain-compensated superlattice of group III-V semiconductor |
Mar. 11, 2003 |
| 6518588 |
Magnetic random access memory with thermally stable magnetic tunnel junction cells |
Feb. 11, 2003 |
| 6515339 |
Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
Feb. 4, 2003 |
| 6508919 |
Optimized liners for dual damascene metal wiring |
Jan. 21, 2003 |
| 6501090 |
Semiconductor laser and method of manufacturing the same |
Dec. 31, 2002 |
| 6489645 |
Integrated circuit device including a layered superlattice material with an interface buffer layer |
Dec. 3, 2002 |
| 6486489 |
Transistor |
Nov. 26, 2002 |
| 6479365 |
Single electron transistor using porous silicon and manufacturing method thereof |
Nov. 12, 2002 |
| 6465375 |
Single electron MOSFET memory device and method |
Oct. 15, 2002 |
| 6460170 |
Connection block for interfacing a plurality of printed circuit boards |
Oct. 1, 2002 |
| 6452831 |
Single electron resistor memory device and method |
Sep. 17, 2002 |
| 6452204 |
Tunneling magnetoresistance transducer and method for manufacturing the same |
Sep. 17, 2002 |
| 6429494 |
Semiconductor read-only memory and method of manufacturing the same |
Aug. 6, 2002 |
| 6424004 |
Semiconductor device having quantum dots |
Jul. 23, 2002 |
| 6420197 |
Semiconductor device and method of fabricating the same |
Jul. 16, 2002 |
| 6417519 |
Field effect transistor with suppressed threshold change |
Jul. 9, 2002 |
| 6414333 |
Single electron transistor using porous silicon |
Jul. 2, 2002 |
| 6413880 |
Strongly textured atomic ridge and dot fabrication |
Jul. 2, 2002 |
| 6410935 |
Semiconductor assisted metal deposition for nanolithography applications |
Jun. 25, 2002 |
| 6406795 |
Compliant universal substrates for optoelectronic and electronic devices |
Jun. 18, 2002 |
| 6388268 |
Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor |
May. 14, 2002 |
| 6383829 |
Optical semiconductor device and method of fabricating the same |
May. 7, 2002 |
| 6384422 |
Method for manufacturing semiconductor device and ultrathin semiconductor device |
May. 7, 2002 |
| 6359288 |
Nanowire arrays |
Mar. 19, 2002 |
| 6348700 |
Monomolecular rectifying wire and logic based thereupon |
Feb. 19, 2002 |
| 6344670 |
Solid-state sensor and system |
Feb. 5, 2002 |
| 6339030 |
Fabrication of photonic band gap materials |
Jan. 15, 2002 |
| 6337293 |
Method of forming a quantum memory element having a film of amorphous silicon |
Jan. 8, 2002 |
| 6326671 |
Semiconductor memory device and method for manufacturing the same |
Dec. 4, 2001 |
| 6326637 |
Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device |
Dec. 4, 2001 |
| 6326311 |
Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure |
Dec. 4, 2001 |
| 6320216 |
Memory device with barrier portions having defined capacitance |
Nov. 20, 2001 |
| 6310359 |
Structures containing quantum conductive barrier layers |
Oct. 30, 2001 |
| 6303516 |
Method for forming dot element |
Oct. 16, 2001 |
| 6297515 |
Integrated acoustic thin film resonator |
Oct. 2, 2001 |
| 6271130 |
Semiconductor assisted metal deposition for nanolithography applications |
Aug. 7, 2001 |
| 6255150 |
Use of crystalline SiOx barriers for Si-based resonant tunneling diodes |
Jul. 3, 2001 |
| 6222254 |
Thermal conducting trench in a semiconductor structure and method for forming the same |
Apr. 24, 2001 |
| 6194736 |
Quantum conductive recrystallization barrier layers |
Feb. 27, 2001 |
| 6188082 |
Diodes with quantum-wave interference layers |
Feb. 13, 2001 |
| 6175123 |
Semiconductor devices with quantum-wave interference layers |
Jan. 16, 2001 |
| 6153500 |
Atomic wire and atomic wire switch |
Nov. 28, 2000 |
| 6103600 |
Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method |
Aug. 15, 2000 |
| 6097036 |
Semiconductor logic element and apparatus using thereof |
Aug. 1, 2000 |
| 6064075 |
Field emission displays with reduced light leakage having an extractor covered with a silicide nitride formed at a temperature above 1000.degree. C. |
May. 16, 2000 |
| 6060743 |
Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same |
May. 9, 2000 |
| 6057555 |
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
May. 2, 2000 |
| 6057564 |
Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode |
May. 2, 2000 |
| 6043507 |
Thin film transistors and methods of making |
Mar. 28, 2000 |
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