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Class Information
Number: 257/9
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
Description: Subject matter wherein the active material is a thin physical layer of material located between materials which have different electrical properties than the thin layer and wherein the thin active physical layer is (1) a potential well layer thin enough to establish discrete quantum energy levels or (2) a potential barrier layer thin enough to permit quantum mechanical tunneling or (3) a layer thin enough to permit carrier transmission therethrough with substantially no scattering of the carriers.










Sub-classes under this class:

Class Number Class Name Patents
257/29 Ballistic transport device (e.g., hot electron transistor) 144
257/12 Heterojunction 397
257/10 Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) 383
257/28 Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers) 111
257/30 Tunneling through region of reduced conductivity 275


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8710489 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same Apr. 29, 2014
8704204 Ferroelectric nanoshell devices Apr. 22, 2014
8686395 Bond type flip-chip light-emitting structure and method of manufacturing the same Apr. 1, 2014
8679949 Silicon nanowire comprising high density metal nanoclusters and method of preparing the same Mar. 25, 2014
8679951 Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure Mar. 25, 2014
8680592 Method of forming a magnetic tunnel junction device Mar. 25, 2014
8669544 High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign catalysis Mar. 11, 2014
8664642 Nonplanar graphite-based devices having multiple bandgaps Mar. 4, 2014
8663491 ION etching of growing InP nanocrystals using microwave Mar. 4, 2014
8659009 Locally gated graphene nanostructures and methods of making and using Feb. 25, 2014
8653550 Inverted light emitting diode having plasmonically enhanced emission Feb. 18, 2014
8648328 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces Feb. 11, 2014
8629422 Deposition of materials Jan. 14, 2014
8629519 Tunneling magnetoresistance sensor Jan. 14, 2014
8624224 Nanotube array bipolar transistors Jan. 7, 2014
8624223 Side-gate defined tunable nanoconstriction in double-gated graphene multilayers Jan. 7, 2014
8618581 Nanofludic field effect transistor based on surface charge modulated nanochannel Dec. 31, 2013
8614434 MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate Dec. 24, 2013
8610103 Flexible microcavities through spin coating Dec. 17, 2013
8610111 Bistable carbazole compounds Dec. 17, 2013
8610125 Nanotube array light emitting diodes Dec. 17, 2013
8604559 Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure Dec. 10, 2013
8604462 Photodetector Dec. 10, 2013
8604459 Electrical devices containing a carbon nanotube switching layer with a passivation layer disposed thereon and methods for production thereof Dec. 10, 2013
8604458 Two-terminal resistance switching device and semiconductor device Dec. 10, 2013
8598564 Nonvolatile semiconductor memory device and manufacturing method thereof Dec. 3, 2013
8592799 Graphene electronic device and method of fabricating the same Nov. 26, 2013
8580658 Methods for fabricating graphene device topography and devices formed therefrom Nov. 12, 2013
8581227 Quantum computational systems Nov. 12, 2013
8575591 Apparatus for forming a nanoscale semiconductor structure on a substrate by applying a carrier fluid Nov. 5, 2013
8569900 Nanowire sensor with angled segments that are differently functionalized Oct. 29, 2013
8562868 Ternary metal transition metal non-oxide nano-particles, methods and applications thereof Oct. 22, 2013
8564025 Nanowire FET having induced radial strain Oct. 22, 2013
8564130 Vertical organic transistor, method for manufacturing the vertical organic transistor, and light emitting element Oct. 22, 2013
8558214 Electronic component, methods for the production thereof, and use thereof Oct. 15, 2013
8551868 Irradiation assisted nucleation of quantum confinements by atomic layer deposition Oct. 8, 2013
8540892 Ion etching of growing InP nanocrystals using microwave Sep. 24, 2013
8541770 Select devices including an open volume, memory devices and systems including same, and methods for forming same Sep. 24, 2013
8536563 Nanowire field effect transistors Sep. 17, 2013
8535635 Method of manufacturing carbon cylindrical structures and biopolymer detection device Sep. 17, 2013
8530257 Band offset in alingap based light emitters to improve temperature performance Sep. 10, 2013
8530881 Optical device and method for its manufacture Sep. 10, 2013
8524544 MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate Sep. 3, 2013
8525147 Semiconductor devices including a transistor with elastic channel Sep. 3, 2013
8513641 Core-shell nanowire comprising silicon rich oxide core and silica shell Aug. 20, 2013
8513642 Patterned doping of semiconductor substrates using photosensitive monolayers Aug. 20, 2013
8507890 Photoconversion device with enhanced photon absorption Aug. 13, 2013
8502197 Layer assembly Aug. 6, 2013
8496844 Ion etching of growing InP nanocrystals using microwave Jul. 30, 2013
8492249 Methods of forming catalytic nanopads Jul. 23, 2013

1 2 3 4 5 6 7 8 9 10 11










 
 
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