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Class Information
Number: 257/9
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
Description: Subject matter wherein the active material is a thin physical layer of material located between materials which have different electrical properties than the thin layer and wherein the thin active physical layer is (1) a potential well layer thin enough to establish discrete quantum energy levels or (2) a potential barrier layer thin enough to permit quantum mechanical tunneling or (3) a layer thin enough to permit carrier transmission therethrough with substantially no scattering of the carriers.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608902 |
Nanowire composite and preparation method thereof |
Oct. 27, 2009 |
| 7601979 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
Oct. 13, 2009 |
| 7602069 |
Micro electronic component with electrically accessible metallic clusters |
Oct. 13, 2009 |
| 7598516 |
Self-aligned process for nanotube/nanowire FETs |
Oct. 6, 2009 |
| 7582890 |
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof |
Sep. 1, 2009 |
| 7582891 |
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon |
Sep. 1, 2009 |
| 7566897 |
Quantum interference device |
Jul. 28, 2009 |
| 7566896 |
Lattice platforms for performing quantum computations |
Jul. 28, 2009 |
| 7557367 |
Stretchable semiconductor elements and stretchable electrical circuits |
Jul. 7, 2009 |
| 7550823 |
Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same |
Jun. 23, 2009 |
| 7550791 |
Transistor and its method of manufacture |
Jun. 23, 2009 |
| 7547907 |
Non-blocking switch having carbon nanostructures and Mach-Zehnder interferometer |
Jun. 16, 2009 |
| 7547910 |
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device |
Jun. 16, 2009 |
| 7535014 |
Integrally gated carbon nanotube field ionizer device and method of manufacture therefor |
May. 19, 2009 |
| 7521292 |
Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
Apr. 21, 2009 |
| 7518138 |
Systems and methods for quantum braiding |
Apr. 14, 2009 |
| 7501649 |
Sensor including porous body with metal particles loaded in the pores of the body and measuring apparatus using the same |
Mar. 10, 2009 |
| 7488970 |
Semiconductor device |
Feb. 10, 2009 |
| 7485908 |
Insulated gate silicon nanowire transistor and method of manufacture |
Feb. 3, 2009 |
| 7479652 |
Qubit readout via controlled coherent tunnelling to probe state |
Jan. 20, 2009 |
| 7470925 |
Magnetic body, magnetic device using the same, and method of manufacturing the same |
Dec. 30, 2008 |
| 7465953 |
Positioning of nanoparticles and fabrication of single election devices |
Dec. 16, 2008 |
| 7456422 |
Semiconductor device |
Nov. 25, 2008 |
| 7435670 |
Bit line barrier metal layer for semiconductor device and process for preparing the same |
Oct. 14, 2008 |
| 7432550 |
Semiconductor structure including mixed rare earth oxide formed on silicon |
Oct. 7, 2008 |
| 7427771 |
Universal gates for ising TQFT via time-tilted interferometry |
Sep. 23, 2008 |
| 7420261 |
Bulk nitride mono-crystal including substrate for epitaxy |
Sep. 2, 2008 |
| 7417227 |
Scanning interference electron microscope |
Aug. 26, 2008 |
| 7414294 |
Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix |
Aug. 19, 2008 |
| 7394092 |
Quasi-particle interferometry for logical gates |
Jul. 1, 2008 |
| 7378870 |
Programmable crossbar signal processor with rectification layer |
May. 27, 2008 |
| 7375368 |
Superlattice for fabricating nanowires |
May. 20, 2008 |
| 7374613 |
Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparatio |
May. 20, 2008 |
| 7355261 |
Thin film device, thin film device module, and method of forming thin film device module |
Apr. 8, 2008 |
| 7348589 |
Low power consumption magnetic memory and magnetic information recording device |
Mar. 25, 2008 |
| 7348591 |
Switch element, memory element and magnetoresistive effect element |
Mar. 25, 2008 |
| 7345296 |
Nanotube transistor and rectifying devices |
Mar. 18, 2008 |
| 7332738 |
Quantum phase-charge coupled device |
Feb. 19, 2008 |
| 7323709 |
Method for increasing efficiency of thermotunnel devices |
Jan. 29, 2008 |
| 7321131 |
Universal gates for ising TQFT via time-tilted interferometry |
Jan. 22, 2008 |
| 7317202 |
Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip |
Jan. 8, 2008 |
| 7310623 |
Games using pair-wise entanglements |
Dec. 18, 2007 |
| 7307272 |
Nanotube based multi-level memory structure |
Dec. 11, 2007 |
| 7301199 |
Nanoscale wires and related devices |
Nov. 27, 2007 |
| 7301183 |
Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
Nov. 27, 2007 |
| 7282731 |
Quantum supermemory |
Oct. 16, 2007 |
| 7276725 |
Bit line barrier metal layer for semiconductor device and process for preparing the same |
Oct. 2, 2007 |
| 7276432 |
Fiber incorporating quantum dots as programmable dopants |
Oct. 2, 2007 |
| 7262991 |
Nanotube- and nanocrystal-based non-volatile memory |
Aug. 28, 2007 |
| 7250624 |
Quasi-particle interferometry for logical gates |
Jul. 31, 2007 |
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