| Class Number |
Class Name |
Patents |
| 257/1 |
Bulk effect device |
78 |
| 257/104 |
Tunneling pn junction (e.g., esaki diode) device |
150 |
| 257/107 |
Regenerative type switching device (e.g., scr, comfet, thyristor) |
193 |
| 257/183 |
Heterojunction device |
244 |
| 257/202 |
Gate arrays |
382 |
| 257/212 |
Conductivity modulation device (e.g., unijunction transistor, double-base diode, conductivity-modulated transistor) |
94 |
| 257/213 |
Field effect device |
289 |
| 257/40 |
Organic semiconductor material |
1,426 |
| 257/41 |
Point contact device |
46 |
| 257/414 |
Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) |
613 |
| 257/42 |
Semiconductor is selenium or tellurium in elemental form |
62 |
| 257/43 |
Semiconductor is an oxide of a metal (e.g., cuo, zno) or copper sulfide |
218 |
| 257/44 |
With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure |
33 |
| 257/471 |
Schottky barrier |
211 |
| 257/48 |
Test or calibration structure |
974 |
| 257/487 |
With means to increase breakdown voltage threshold |
149 |
| 257/49 |
Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) |
207 |
| 257/497 |
Punchthrough structure device (e.g., punchthrough transistor, camel barrier diode) |
74 |
| 257/499 |
Integrated circuit structure with electrically isolated components |
289 |
| 257/565 |
Bipolar transistor structure |
440 |
| 257/594 |
With groove to define plural diodes |
63 |
| 257/595 |
Voltage variable capacitance device |
104 |
| 257/603 |
Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) |
207 |
| 257/607 |
With specified dopant (e.g., plural dopants of same conductivity in same region) |
258 |
| 257/613 |
Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) |
198 |
| 257/617 |
Including region containing crystal damage |
189 |
| 257/618 |
Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.) |
454 |
| 257/629 |
With means to control surface effects |
132 |
| 257/653 |
With specified shape of pn junction |
178 |
| 257/655 |
With specified impurity concentration gradient |
251 |
| 257/658 |
Plate type rectifier array |
34 |
| 257/659 |
With shielding (e.g., electrical or magnetic shielding, or from electromagnetic radiation or charged particles) |
575 |
| 257/661 |
Superconductive contact or lead |
80 |
| 257/664 |
Transmission line lead (e.g., stripline, coax, etc.) |
357 |
| 257/665 |
Contacts or leads including fusible link means or noise suppression means |
278 |
| 257/666 |
Lead frame |
2,055 |
| 257/678 |
Housing or package |
1,468 |
| 257/734 |
Combined with electrical contact or lead |
783 |
| 257/76 |
Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas |
277 |
| 257/787 |
Encapsulated |
1,767 |
| 257/79 |
Incoherent light emitter structure |
978 |
| 257/797 |
Alignment marks |
674 |
| 257/798 |
Miscellaneous |
167 |
| 257/9 |
Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) |
235 |
| 257/900 |
Mosfet type gate sidewall insulating spacer |
435 |
| 257/901 |
Mosfet substrate bias |
73 |
| 257/902 |
Fet with metal source region |
23 |
| 257/903 |
Fet configuration adapted for use as static memory cell |
609 |
| 257/905 |
Plural dram cells share common contact or common trench |
120 |
| 257/906 |
Dram with capacitor electrodes used for accessing (e.g., bit line is capacitor plate) |
153 |
| 257/907 |
Folded bit line dram configuration |
66 |
| 257/908 |
Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines |
105 |
| 257/909 |
Macrocell arrays (e.g., gate arrays with variable size or configuration of cells) |
86 |
| 257/910 |
Diode arrays (e.g., diode read-only memory array) |
60 |
| 257/911 |
Light sensitive array adapted to be scanned by electron beam (e.g.,vidicon device) |
28 |
| 257/912 |
Charge transfer device using both electron and hole signal carriers |
23 |
| 257/913 |
With means to absorb or localize unwanted impurities or defects from semiconductors (e.g., heavy metal gettering) |
68 |
| 257/914 |
Polysilicon containing oxygen, nitrogen, or carbon (e.g., sipos) |
79 |
| 257/915 |
With titanium nitride portion or region |
188 |
| 257/916 |
Narrow band gap semiconductor material (>>1ev) |
41 |
| 257/917 |
Plural dopants of same conductivity type in same region |
37 |
| 257/918 |
Light emitting regenerative switching device (e.g., light emitting scr) arrays, circuitry, etc. |
68 |
| 257/919 |
Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics |
27 |
| 257/920 |
Conductor layers on different levels connected in parallel (e.g., to reduce resistance) |
50 |
| 257/921 |
Radiation hardened semiconductor device |
35 |
| 257/922 |
With means to prevent inspection of or tampering with an integrated circuit (e.g., "smart card", anti-tamper) |
63 |
| 257/923 |
With means to optimize electrical conductor current carrying capacity (e.g., particular conductor aspect ratio) |
79 |
| 257/924 |
With passive device (e.g., capacitor), or battery, as integral part of housing or housing element (e.g., cap) |
101 |
| 257/925 |
Bridge rectifier module |
24 |
| 257/926 |
Elongated lead extending axially through another elongated lead |
90 |
| 257/927 |
Different doping levels in different parts of pn junction to produce shaped depletion layer |
27 |
| 257/928 |
With shorted pn or schottky junction other than emitter junction |
41 |
| 257/929 |
Pn junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer (e.g., diffused from both surfaces of epitaxial layer) |
19 |
| 257/930 |
Thermoelectric (e.g., peltier effect) cooling |
133 |
| 257/E21.001 |
Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) |
86 |
| 257/E23.001 |
Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) |
59 |
| 257/E25.001 |
Assemblies consisting of plurality of individual semiconductor or other solid-state devices (epo) |
2 |
| 257/E27.001 |
Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) |
36 |
| 257/E29.001 |
Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) |
14 |
| 257/E31.001 |
Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) |
30 |
| 257/E33.001 |
Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof |
66 |
| 257/E39.001 |
Devices using superconductivity, processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) |
9 |
| 257/E43.001 |
Semiconductor or solid-state devices using galvano-magnetic or similar magnetic effects, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) |
13 |
| 257/E45.001 |
Solid-state devices adapted for rectifying, amplifying, oscillating, or switching without potential-jump barrier or surface barrier, e.g., dielectric triodes; ovshinsky-effect devices, processes, or apparatus peculiar to manufacture or treatment thereof, or of parts thereof (epo) |
119 |
| 257/E47.001 |
Bulk negative resistance effect devices, e.g., gunn-effect devices, processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) |
11 |
| 257/E49.001 |
Solid-state devices with at least one potential-jump barrier or surface barrier using active layer of lower electrical conductivity than material adjacent thereto and through which carrier tunneling occurs, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) |
28 |
| 257/E51.001 |
Organic solid state devices, processes or apparatus peculiar to manufacture or treatment of such devices or of parts thereof |
35 |
