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Class Information
Number: 257/87
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Incoherent light emitter structure > Active layer of indirect band gap semiconductor > With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gap)
Description: Subject matter wherein the light emitting active region with an indirect band gap layer has means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gallium phosphide).










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
6265726 Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity Jul. 24, 2001
6265732 Light emitting diode Jul. 24, 2001
6236794 Multi-section electro-optical monolithic component May. 22, 2001
6218681 Gallium arsenide phosphide epitaxial wafer and light emitting diode Apr. 17, 2001
6078062 II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation Jun. 20, 2000
6072196 semiconductor light emitting devices Jun. 6, 2000
6005258 Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities Dec. 21, 1999
5949089 Organic light emitting diode having thin insulating layer Sep. 7, 1999
5900642 Semiconductor light emitting device May. 4, 1999
5886369 Epitaxial wafer for GaP pure green light-emitting diode and GaP pure green light-emitting diode Mar. 23, 1999
5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements Jun. 16, 1998
5751014 Semiconductor light emitting device May. 12, 1998
5751026 Epitaxial wafer of gallium arsenide phosphide May. 12, 1998
5646419 n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same Jul. 8, 1997
5442201 Semiconductor light emitting device with nitrogen doping Aug. 15, 1995
5300792 Gap red light emitting diode Apr. 5, 1994
5293896 Arrangement for measuring the level of liquified gases Mar. 15, 1994
5291037 Light-emitting device Mar. 1, 1994
4827318 Silicon based light emitting devices May. 2, 1989
4675709 Quantized layered structures with adjusted indirect bandgap transitions Jun. 23, 1987
4510515 Epitaxial wafer of compound semiconductor display device Apr. 9, 1985
4417262 Green light emitting device Nov. 22, 1983
4303931 Monolithic electroluminescent semiconductor assembly Dec. 1, 1981
4252576 Epitaxial wafer for use in production of light emitting diode Feb. 24, 1981
4224632 Green light emitting device Sep. 23, 1980
4154630 Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process May. 15, 1979
RE29845 GaAs.sub.1-x P.sub.x electroluminescent device doped with isoelectronic impurities Nov. 21, 1978
4101920 Green light emitting diode Jul. 18, 1978
4001056 Epitaxial deposition of III-V compounds containing isoelectronic impurities Jan. 4, 1977
3942185 Polychromatic electroluminescent device Mar. 2, 1976
3934260 Red light-emitting gallium phosphide device Jan. 20, 1976
3931631 Gallium phosphide light-emitting diodes Jan. 6, 1976

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