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Class Information
Number: 257/87
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Incoherent light emitter structure > Active layer of indirect band gap semiconductor > With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gap)
Description: Subject matter wherein the light emitting active region with an indirect band gap layer has means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gallium phosphide).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7453096 |
Method of fabricating a semiconductor light-emitting device |
Nov. 18, 2008 |
| 7432533 |
Encapsulation of electronic devices with shaped spacers |
Oct. 7, 2008 |
| 7329898 |
Transition metal complex and light-emitting device |
Feb. 12, 2008 |
| 7329902 |
IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers |
Feb. 12, 2008 |
| 7329942 |
Array-type modularized light-emitting diode structure and a method for packaging the structure |
Feb. 12, 2008 |
| 7274041 |
Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials |
Sep. 25, 2007 |
| 7247885 |
Carrier confinement in light-emitting group IV semiconductor devices |
Jul. 24, 2007 |
| 7244964 |
Light emitting device |
Jul. 17, 2007 |
| 7180100 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
Feb. 20, 2007 |
| 7180154 |
Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same |
Feb. 20, 2007 |
| 7176498 |
Terahertz radiating device based on semiconductor coupled quantum wells |
Feb. 13, 2007 |
| 7173286 |
Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide |
Feb. 6, 2007 |
| 7166870 |
Light emitting devices with improved extraction efficiency |
Jan. 23, 2007 |
| 7157741 |
Silicon optoelectronic device and optical signal input and/or output apparatus using the same |
Jan. 2, 2007 |
| 7095042 |
Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same |
Aug. 22, 2006 |
| 7067838 |
Gallium-nitride-based light-emitting apparatus |
Jun. 27, 2006 |
| 7053422 |
Solid-state self-emission display and its production method |
May. 30, 2006 |
| 7048872 |
Codoped direct-gap semiconductor scintillators |
May. 23, 2006 |
| 7030419 |
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof |
Apr. 18, 2006 |
| 6998721 |
Stacking and encapsulation of multiple interconnected integrated circuits |
Feb. 14, 2006 |
| 6974974 |
Light emitting devices with layered III -V semiconductor structures, and modules and systems for computer, network and optical communication, using such devices |
Dec. 13, 2005 |
| 6970490 |
Organic light emitting devices based on the formation of an electron-hole plasma |
Nov. 29, 2005 |
| 6956240 |
Light emitting device |
Oct. 18, 2005 |
| 6940098 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
Sep. 6, 2005 |
| 6930330 |
Silicon optoelectronic device and light emitting apparatus using the same |
Aug. 16, 2005 |
| 6911675 |
Active matrix display device and manufacturing method thereof |
Jun. 28, 2005 |
| 6894307 |
Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
May. 17, 2005 |
| 6881978 |
Semiconductor epitaxial structure and semiconductor light-emitting device |
Apr. 19, 2005 |
| 6876002 |
Semiconductor laser device and method for manufacturing the same |
Apr. 5, 2005 |
| 6870193 |
Semiconductor light emitting device and its manufacturing method |
Mar. 22, 2005 |
| 6861674 |
Electroluminescent device |
Mar. 1, 2005 |
| 6858876 |
Semiconductor diode device |
Feb. 22, 2005 |
| 6855959 |
Nitride based semiconductor photo-luminescent device |
Feb. 15, 2005 |
| 6847045 |
High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
Jan. 25, 2005 |
| 6831302 |
Light emitting devices with improved extraction efficiency |
Dec. 14, 2004 |
| 6803603 |
Semiconductor light-emitting element |
Oct. 12, 2004 |
| 6797991 |
Nitride semiconductor device |
Sep. 28, 2004 |
| 6791115 |
Light emitting device, display device and electronic instrument |
Sep. 14, 2004 |
| 6777724 |
Light-emitting device with organic layer doped with photoluminescent material |
Aug. 17, 2004 |
| 6677059 |
EL device and making method |
Jan. 13, 2004 |
| 6653663 |
Nitride semiconductor device |
Nov. 25, 2003 |
| 6649943 |
Group III nitride compound semiconductor light-emitting element |
Nov. 18, 2003 |
| 6639354 |
Light emitting device, production method thereof, and light emitting apparatus and display unit using the same |
Oct. 28, 2003 |
| 6607932 |
High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region |
Aug. 19, 2003 |
| 6599133 |
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
Jul. 29, 2003 |
| 6566688 |
Compound semiconductor structures for optoelectronic devices |
May. 20, 2003 |
| 6515298 |
Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
Feb. 4, 2003 |
| 6504178 |
Indirect back surface contact to semiconductor devices |
Jan. 7, 2003 |
| 6479312 |
Gallium phosphide luminescent device |
Nov. 12, 2002 |
| 6476420 |
P-N homojunction-based structures utilizing HVPE growth III-V compound layers |
Nov. 5, 2002 |
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