| |
 |
|
Class Information
Number: 257/79
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Incoherent light emitter structure
Description: Subject matter wherein the active solid-state device generates incoherent light when subjected to an appropriate input signal.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/86 |
Active layer of indirect band gap semiconductor |
152 |
| 257/100 |
Encapsulated |
582 |
| 257/80 |
In combination with or also constituting light responsive device |
431 |
| 257/88 |
Plural light emitting devices (e.g., matrix, 7-segment array) |
668 |
| 257/94 |
With heterojunction |
927 |
| 257/99 |
With housing or contact structure |
1,430 |
| 257/101 |
With particular dopant concentration or concentration profile (e.g., graded junction) |
321 |
| 257/102 |
With particular dopant material (e.g., zinc as dopant in gaas) |
424 |
| 257/103 |
With particular semiconductor material |
1,593 |
| 257/98 |
With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package |
1,729 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5710441 |
Microcavity LED with photon recycling |
Jan. 20, 1998 |
| 5705834 |
Increased efficiency LED |
Jan. 6, 1998 |
| 5703394 |
Integrated electro-optical package |
Dec. 30, 1997 |
| 5686738 |
Highly insulating monocrystalline gallium nitride thin films |
Nov. 11, 1997 |
| 5661313 |
Electroluminescent device in silicon on sapphire |
Aug. 26, 1997 |
| 5659184 |
III-V compound semiconductor device with a polycrystalline structure with minimum grain size of 0.6 .mu.m and printer and display device utilizing the same |
Aug. 19, 1997 |
| 5652434 |
Gallium nitride-based III-V group compound semiconductor |
Jul. 29, 1997 |
| 5641582 |
Thin-film EL element |
Jun. 24, 1997 |
| 5641611 |
Method of fabricating organic LED matrices |
Jun. 24, 1997 |
| 5627386 |
Silicon nanostructure light-emitting diode |
May. 6, 1997 |
| 5619058 |
Light emitting diode device having four discrete regions |
Apr. 8, 1997 |
| 5606181 |
Edge emitting type light emitting diode array heads |
Feb. 25, 1997 |
| 5563422 |
Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
Oct. 8, 1996 |
| 5561679 |
Radioluminescent semiconductor light source |
Oct. 1, 1996 |
| 5541423 |
Monocrystalline diamond semiconductor device and several electronic components employing same |
Jul. 30, 1996 |
| 5521934 |
Materials for II-VI lasers |
May. 28, 1996 |
| 5444268 |
Thin film el device |
Aug. 22, 1995 |
| 5440575 |
Article comprising a semiconductor laser with stble facet coating |
Aug. 8, 1995 |
| 5434939 |
Optical fiber module with surface emitting laser |
Jul. 18, 1995 |
| 5424573 |
Semiconductor package having optical interconnection access |
Jun. 13, 1995 |
| 5394422 |
Materials for II-VI lasers |
Feb. 28, 1995 |
| 5386139 |
Semiconductor light emitting element with improved structure of groove therein |
Jan. 31, 1995 |
| 5384517 |
Electroluminescent element including a thin-film transistor for charge control |
Jan. 24, 1995 |
| 5382813 |
Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers |
Jan. 17, 1995 |
| 5373172 |
Semiconducting diamond light-emitting element |
Dec. 13, 1994 |
| 5369290 |
Light emission element using a polycrystalline semiconductor material of III-V group compound |
Nov. 29, 1994 |
| 5357121 |
Optoelectronic integrated circuit |
Oct. 18, 1994 |
| 5349208 |
GaP light emitting element substrate with oxygen doped buffer |
Sep. 20, 1994 |
| 5347147 |
Light emitting diamond device |
Sep. 13, 1994 |
| 5344518 |
Pyroelectric IR-sensor |
Sep. 6, 1994 |
| 5329135 |
Light emitting device for achieving high luminous efficiency and high saturation level of light output |
Jul. 12, 1994 |
| 5324965 |
Light emitting diode with electro-chemically etched porous silicon |
Jun. 28, 1994 |
| 5323025 |
Pyroelectric IR-sensor having a low thermal conductive ceramic substrate |
Jun. 21, 1994 |
| 5323084 |
Light emitting diode printhead |
Jun. 21, 1994 |
| 5315272 |
Light emitting tunnel diode oscillator |
May. 24, 1994 |
| 5313324 |
Solid state optical converter |
May. 17, 1994 |
| 5300806 |
Separation of diode array chips during fabrication thereof |
Apr. 5, 1994 |
| 5299217 |
Semiconductor light-emitting device with cadmium zinc selenide layer |
Mar. 29, 1994 |
| 5299057 |
Monolithically integrated optical amplifier and photodetector tap |
Mar. 29, 1994 |
| 5299218 |
Multi-tip semiconductor laser |
Mar. 29, 1994 |
| 5291037 |
Light-emitting device |
Mar. 1, 1994 |
| 5291507 |
Blue-green laser diode |
Mar. 1, 1994 |
| 5281829 |
Optical semiconductor device having semiconductor laser and photodetector |
Jan. 25, 1994 |
| 5278433 |
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
Jan. 11, 1994 |
| 5270555 |
Pyroelectric IR-sensor with a molded inter connection device substrate having a low thermal conductivity coefficient |
Dec. 14, 1993 |
| 5264714 |
Thin-film electroluminescence device |
Nov. 23, 1993 |
| 5262657 |
Optically activated wafer-scale pulser with AlGaAs epitaxial layer |
Nov. 16, 1993 |
| 5260958 |
Materials for II-VI lasers |
Nov. 9, 1993 |
| 5258628 |
Linearizing emitted light intensity from a light-emitting device |
Nov. 2, 1993 |
| 5243200 |
Semiconductor device having a substrate recess forming semiconductor regions |
Sep. 7, 1993 |
|
|
|
