| |
 |
|
Class Information
Number: 257/78
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas > Ii-vi compound
Description: Subject matter wherein the specified wide band gap material is a compound, one element of which comes from group II, and the other element of which comes from group VI of the periodic table of elements.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442254 |
Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer |
Oct. 28, 2008 |
| 7420235 |
Solid-state imaging device and method for producing the same |
Sep. 2, 2008 |
| 7417255 |
Methods of forming a high conductivity diamond film and structures formed thereby |
Aug. 26, 2008 |
| 7404913 |
Codoped direct-gap semiconductor scintillators |
Jul. 29, 2008 |
| 7399692 |
III-nitride semiconductor fabrication |
Jul. 15, 2008 |
| 7368794 |
Boron carbide particle detectors |
May. 6, 2008 |
| 7348200 |
Method of growing non-polar a-plane gallium nitride |
Mar. 25, 2008 |
| 7291865 |
Light-emitting semiconductor device |
Nov. 6, 2007 |
| 7259398 |
Semiconductor light emitting apparatus and method of fabricating the same |
Aug. 21, 2007 |
| 7253446 |
Light emitting device and illumination apparatus |
Aug. 7, 2007 |
| 7202503 |
III-V and II-VI compounds as template materials for growing germanium containing film on silicon |
Apr. 10, 2007 |
| 7176497 |
Group III nitride compound semiconductor |
Feb. 13, 2007 |
| 7173286 |
Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide |
Feb. 6, 2007 |
| 7154128 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
Dec. 26, 2006 |
| 7105875 |
Lateral power diodes |
Sep. 12, 2006 |
| 7102171 |
Magnetic semiconductor material and method for preparation thereof |
Sep. 5, 2006 |
| 7084422 |
Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers |
Aug. 1, 2006 |
| 7071047 |
Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions |
Jul. 4, 2006 |
| 7064354 |
Color mixing light emitting diode |
Jun. 20, 2006 |
| 7042011 |
Compound semiconductor laser |
May. 9, 2006 |
| 7030417 |
Semiconductor light emitting device and fabrication method thereof |
Apr. 18, 2006 |
| 7026179 |
Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate |
Apr. 11, 2006 |
| 7026652 |
Semiconductor light emitting diode |
Apr. 11, 2006 |
| 7009209 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
Mar. 7, 2006 |
| 6998697 |
Non-volatile resistance variable devices |
Feb. 14, 2006 |
| 6992317 |
Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
Jan. 31, 2006 |
| 6982494 |
Semiconductor device with signal line having decreased characteristic impedance |
Jan. 3, 2006 |
| 6930329 |
Method for manufacturing gallium nitride compound semiconductor |
Aug. 16, 2005 |
| 6906351 |
Group III-nitride growth on Si substrate using oxynitride interlayer |
Jun. 14, 2005 |
| 6893950 |
Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof |
May. 17, 2005 |
| 6855992 |
Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
Feb. 15, 2005 |
| 6835966 |
Method for manufacturing gallium nitride compound semiconductor |
Dec. 28, 2004 |
| 6818926 |
Method for manufacturing gallium nitride compound semiconductor |
Nov. 16, 2004 |
| 6791257 |
Photoelectric conversion functional element and production method thereof |
Sep. 14, 2004 |
| 6664570 |
P-type contact electrode device and light-emitting device |
Dec. 16, 2003 |
| 6657290 |
Semiconductor device having insulation layer and adhesion layer between chip lamination |
Dec. 2, 2003 |
| 6639247 |
Semi-insulating silicon carbide without vanadium domination |
Oct. 28, 2003 |
| 6590236 |
Semiconductor structure for use with high-frequency signals |
Jul. 8, 2003 |
| 6580098 |
Method for manufacturing gallium nitride compound semiconductor |
Jun. 17, 2003 |
| 6555847 |
Nitride based semiconductor light emitting element |
Apr. 29, 2003 |
| 6469319 |
Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same |
Oct. 22, 2002 |
| 6456639 |
Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same |
Sep. 24, 2002 |
| 6407409 |
Method and apparatus for single crystal gallium nitride (GAN) bulk synthesis |
Jun. 18, 2002 |
| 6403982 |
Semi-insulating silicon carbide without vanadium domination |
Jun. 11, 2002 |
| 6396080 |
Semi-insulating silicon carbide without vanadium domination |
May. 28, 2002 |
| 6388272 |
W/WC/TAC ohmic and rectifying contacts on SiC |
May. 14, 2002 |
| 6372536 |
II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction |
Apr. 16, 2002 |
| 6365918 |
Method and device for interconnected radio frequency power SiC field effect transistors |
Apr. 2, 2002 |
| 6326654 |
Hybrid ultraviolet detector |
Dec. 4, 2001 |
| 6284395 |
Nitride based semiconductors and devices |
Sep. 4, 2001 |
|
|
|
