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Class Information
Number: 257/775
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified configuration > Varying width or thickness of conductor
Description: Subject matter wherein an electrical contact or lead has a width or thickness which varies over the length of the contact or lead.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4949157 |
Large scale integrated circuit |
Aug. 14, 1990 |
| 4935637 |
Linear element array with wire bonding arrangement |
Jun. 19, 1990 |
| 4935797 |
Heterojunction bipolar transistors |
Jun. 19, 1990 |
| 4924290 |
Semiconductor device having improved multilayered wirings |
May. 8, 1990 |
| 4916509 |
Method for obtaining low interconnect resistance on a grooved surface and the resulting structure |
Apr. 10, 1990 |
| 4905068 |
Semiconductor device having interconnection layers of T-shape cross section |
Feb. 27, 1990 |
| 4882607 |
Optical semiconductor device |
Nov. 21, 1989 |
| 4847674 |
High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism |
Jul. 11, 1989 |
| 4839510 |
Optical sensor including shortcircuit protection having notched electrode regions |
Jun. 13, 1989 |
| 4835591 |
Wiring arrangement for semiconductor devices |
May. 30, 1989 |
| 4807013 |
Polysilicon fillet |
Feb. 21, 1989 |
| 4807017 |
Semiconductor memory device with wirings having ensured cross-sections |
Feb. 21, 1989 |
| 4754318 |
Semiconductor device |
Jun. 28, 1988 |
| 4747076 |
Method of writing information into a fuse-type ROM |
May. 24, 1988 |
| 4728627 |
Method of making multilayered interconnects using hillock studs formed by sintering |
Mar. 1, 1988 |
| 4718977 |
Process for forming semiconductor device having multi-thickness metallization |
Jan. 12, 1988 |
| 4695868 |
Patterned metallization for integrated circuits |
Sep. 22, 1987 |
| 4654692 |
Semiconductor device of resin-seal type |
Mar. 31, 1987 |
| 4652812 |
One-sided ion migration velocity measurement and electromigration failure warning device |
Mar. 24, 1987 |
| 4625227 |
Resin molded type semiconductor device having a conductor film |
Nov. 25, 1986 |
| 4605470 |
Method for interconnecting conducting layers of an integrated circuit device |
Aug. 12, 1986 |
| 4601781 |
Method for improving step coverage of dielectrics in VLSI circuits |
Jul. 22, 1986 |
| 4600663 |
Microstrip line |
Jul. 15, 1986 |
| 4583111 |
Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients |
Apr. 15, 1986 |
| 4571559 |
High-power waveguide limiter comprising PIN diodes for millimeter waves |
Feb. 18, 1986 |
| 4499484 |
Integrated circuit manufactured by master slice method |
Feb. 12, 1985 |
| 4495511 |
Permeable base transistor structure |
Jan. 22, 1985 |
| 4475119 |
Integrated circuit power transmission array |
Oct. 2, 1984 |
| 4467345 |
Semiconductor integrated circuit device |
Aug. 21, 1984 |
| 4413272 |
Semiconductor devices having fuses |
Nov. 1, 1983 |
| 4335392 |
Semiconductor device with at least two semiconductor elements |
Jun. 15, 1982 |
| 4259684 |
Packages for microwave integrated circuits |
Mar. 31, 1981 |
| 4228452 |
Silicon device with uniformly thick polysilicon |
Oct. 14, 1980 |
| 4204218 |
Support structure for thin semiconductor wafer |
May. 20, 1980 |
| 4184933 |
Method of fabricating two level interconnects and fuse on an IC |
Jan. 22, 1980 |
| 4173768 |
Contact for semiconductor devices |
Nov. 6, 1979 |
| 4151546 |
Semiconductor device having electrode-lead layer units of differing thicknesses |
Apr. 24, 1979 |
| 4145707 |
Semiconductor luminescent display apparatus |
Mar. 20, 1979 |
| 4080512 |
Substrate for integrated circuit |
Mar. 21, 1978 |
| 4067039 |
Ultrasonic bonding head |
Jan. 3, 1978 |
| 4012764 |
Semiconductor integrated circuit device |
Mar. 15, 1977 |
| 3943546 |
Transistor |
Mar. 9, 1976 |
| 3938177 |
Narrow lead contact for automatic face down bonding of electronic chips |
Feb. 10, 1976 |
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