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Class Information
Number: 257/770
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Refractory or platinum group metal or alloy or silicide thereof > Molybdenum, tungsten, or titanium or their silicides
Description: Subject matter wherein the specified contact or lead material is molybdenum (Mo), tungsten (W), titanium (Ti), or their silicides, (i.e., a binary compound of one of them with silicon).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615867 |
Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same |
Nov. 10, 2009 |
| 7550782 |
Semiconductor device having an undercoat layer and method of manufacturing the same |
Jun. 23, 2009 |
| 7550851 |
Adhesion of tungsten nitride films to a silicon surface |
Jun. 23, 2009 |
| 7485965 |
Through via in ultra high resistivity wafer and related methods |
Feb. 3, 2009 |
| 7459788 |
Ohmic electrode structure of nitride semiconductor device |
Dec. 2, 2008 |
| 7443032 |
Memory device with chemical vapor deposition of titanium for titanium silicide contacts |
Oct. 28, 2008 |
| 7385260 |
Semiconductor device having silicide thin film and method of forming the same |
Jun. 10, 2008 |
| 7372160 |
Barrier film deposition over metal for reduction in metal dishing after CMP |
May. 13, 2008 |
| 7312531 |
Semiconductor device and fabrication method thereof |
Dec. 25, 2007 |
| 7294893 |
Titanium silicide boride gate electrode |
Nov. 13, 2007 |
| 7294565 |
Method of fabricating a wire bond pad with Ni/Au metallization |
Nov. 13, 2007 |
| 7256501 |
Semiconductor device and manufacturing method of the same |
Aug. 14, 2007 |
| 7245018 |
Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
Jul. 17, 2007 |
| 7179743 |
Titanium underlayer for lines in semiconductor devices |
Feb. 20, 2007 |
| 7161211 |
Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition |
Jan. 9, 2007 |
| 7148570 |
Low resistivity titanium silicide on heavily doped semiconductor |
Dec. 12, 2006 |
| 7129531 |
Programmable resistance memory element with titanium rich adhesion layer |
Oct. 31, 2006 |
| 7122903 |
Contact plug processing and a contact plug |
Oct. 17, 2006 |
| 7119443 |
Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element |
Oct. 10, 2006 |
| 7087997 |
Copper to aluminum interlayer interconnect using stud and via liner |
Aug. 8, 2006 |
| 7071563 |
Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
Jul. 4, 2006 |
| 7045831 |
Semiconductor device |
May. 16, 2006 |
| 6984891 |
Methods for making copper and other metal interconnections in integrated circuits |
Jan. 10, 2006 |
| 6953996 |
Low-loss coplanar waveguides and method of fabrication |
Oct. 11, 2005 |
| 6940094 |
Electronic device and method for manufacturing the same |
Sep. 6, 2005 |
| 6906420 |
Semiconductor device |
Jun. 14, 2005 |
| 6900461 |
Conductive thin film for semiconductor device, semiconductor device, and method of manufacturing the same |
May. 31, 2005 |
| 6882052 |
Plasma enhanced liner |
Apr. 19, 2005 |
| 6879043 |
Electrode structure and method for fabricating the same |
Apr. 12, 2005 |
| 6870266 |
Oxide semiconductor electrode and process for producing the same |
Mar. 22, 2005 |
| 6867130 |
Enhanced silicidation of polysilicon gate electrodes |
Mar. 15, 2005 |
| 6861758 |
Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process |
Mar. 1, 2005 |
| 6844601 |
Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same |
Jan. 18, 2005 |
| 6833625 |
Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect |
Dec. 21, 2004 |
| 6822307 |
Semiconductor triode device having a compound-semiconductor channel layer |
Nov. 23, 2004 |
| 6815819 |
In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications |
Nov. 9, 2004 |
| 6806573 |
Low angle, low energy physical vapor deposition of alloys |
Oct. 19, 2004 |
| 6787833 |
Integrated circuit having a barrier structure |
Sep. 7, 2004 |
| 6777811 |
Semiconductor device and its fabrication method |
Aug. 17, 2004 |
| 6774036 |
Integrated circuit trenched features and method of producing same |
Aug. 10, 2004 |
| 6770972 |
Method for electrical interconnection employing salicide bridge |
Aug. 3, 2004 |
| 6764948 |
Method of manufacturing a semiconductor device and the semiconductor device manufactured by the method |
Jul. 20, 2004 |
| 6759683 |
Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications |
Jul. 6, 2004 |
| 6753605 |
Passivation scheme for bumped wafers |
Jun. 22, 2004 |
| 6727593 |
Semiconductor device with improved bonding |
Apr. 27, 2004 |
| 6717271 |
Semiconductor device with mushroom electrode and manufacture method thereof |
Apr. 6, 2004 |
| 6693354 |
Semiconductor structure with substantially etched nitride defects protruding therefrom |
Feb. 17, 2004 |
| 6690094 |
High aspect ratio metallization structures |
Feb. 10, 2004 |
| 6690093 |
Metal contact structure in semiconductor device and method for forming the same |
Feb. 10, 2004 |
| 6683357 |
Semiconductor constructions |
Jan. 27, 2004 |
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