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Class Information
Number: 257/770
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Refractory or platinum group metal or alloy or silicide thereof > Molybdenum, tungsten, or titanium or their silicides
Description: Subject matter wherein the specified contact or lead material is molybdenum (Mo), tungsten (W), titanium (Ti), or their silicides, (i.e., a binary compound of one of them with silicon).


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
7615867 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same Nov. 10, 2009
7550782 Semiconductor device having an undercoat layer and method of manufacturing the same Jun. 23, 2009
7550851 Adhesion of tungsten nitride films to a silicon surface Jun. 23, 2009
7485965 Through via in ultra high resistivity wafer and related methods Feb. 3, 2009
7459788 Ohmic electrode structure of nitride semiconductor device Dec. 2, 2008
7443032 Memory device with chemical vapor deposition of titanium for titanium silicide contacts Oct. 28, 2008
7385260 Semiconductor device having silicide thin film and method of forming the same Jun. 10, 2008
7372160 Barrier film deposition over metal for reduction in metal dishing after CMP May. 13, 2008
7312531 Semiconductor device and fabrication method thereof Dec. 25, 2007
7294893 Titanium silicide boride gate electrode Nov. 13, 2007
7294565 Method of fabricating a wire bond pad with Ni/Au metallization Nov. 13, 2007
7256501 Semiconductor device and manufacturing method of the same Aug. 14, 2007
7245018 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof Jul. 17, 2007
7179743 Titanium underlayer for lines in semiconductor devices Feb. 20, 2007
7161211 Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition Jan. 9, 2007
7148570 Low resistivity titanium silicide on heavily doped semiconductor Dec. 12, 2006
7129531 Programmable resistance memory element with titanium rich adhesion layer Oct. 31, 2006
7122903 Contact plug processing and a contact plug Oct. 17, 2006
7119443 Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element Oct. 10, 2006
7087997 Copper to aluminum interlayer interconnect using stud and via liner Aug. 8, 2006
7071563 Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer Jul. 4, 2006
7045831 Semiconductor device May. 16, 2006
6984891 Methods for making copper and other metal interconnections in integrated circuits Jan. 10, 2006
6953996 Low-loss coplanar waveguides and method of fabrication Oct. 11, 2005
6940094 Electronic device and method for manufacturing the same Sep. 6, 2005
6906420 Semiconductor device Jun. 14, 2005
6900461 Conductive thin film for semiconductor device, semiconductor device, and method of manufacturing the same May. 31, 2005
6882052 Plasma enhanced liner Apr. 19, 2005
6879043 Electrode structure and method for fabricating the same Apr. 12, 2005
6870266 Oxide semiconductor electrode and process for producing the same Mar. 22, 2005
6867130 Enhanced silicidation of polysilicon gate electrodes Mar. 15, 2005
6861758 Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process Mar. 1, 2005
6844601 Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same Jan. 18, 2005
6833625 Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect Dec. 21, 2004
6822307 Semiconductor triode device having a compound-semiconductor channel layer Nov. 23, 2004
6815819 In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications Nov. 9, 2004
6806573 Low angle, low energy physical vapor deposition of alloys Oct. 19, 2004
6787833 Integrated circuit having a barrier structure Sep. 7, 2004
6777811 Semiconductor device and its fabrication method Aug. 17, 2004
6774036 Integrated circuit trenched features and method of producing same Aug. 10, 2004
6770972 Method for electrical interconnection employing salicide bridge Aug. 3, 2004
6764948 Method of manufacturing a semiconductor device and the semiconductor device manufactured by the method Jul. 20, 2004
6759683 Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications Jul. 6, 2004
6753605 Passivation scheme for bumped wafers Jun. 22, 2004
6727593 Semiconductor device with improved bonding Apr. 27, 2004
6717271 Semiconductor device with mushroom electrode and manufacture method thereof Apr. 6, 2004
6693354 Semiconductor structure with substantially etched nitride defects protruding therefrom Feb. 17, 2004
6690094 High aspect ratio metallization structures Feb. 10, 2004
6690093 Metal contact structure in semiconductor device and method for forming the same Feb. 10, 2004
6683357 Semiconductor constructions Jan. 27, 2004

1 2 3 4 5 6 7


 
 
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