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Class Information
Number: 257/77
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas > Diamond or silicon carbide
Description: Subject matter wherein the specified wide band gap material is diamond or silicon carbide.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618884 |
Method and device with durable contact on silicon carbide |
Nov. 17, 2009 |
| 7619257 |
Devices including graphene layers epitaxially grown on single crystal substrates |
Nov. 17, 2009 |
| 7615203 |
Single crystal diamond |
Nov. 10, 2009 |
| 7615788 |
Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry |
Nov. 10, 2009 |
| 7612501 |
Plasma display apparatus comprising connector |
Nov. 3, 2009 |
| 7608524 |
Method of and system for forming SiC crystals having spatially uniform doping impurities |
Oct. 27, 2009 |
| 7601986 |
Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
Oct. 13, 2009 |
| 7601441 |
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
Oct. 13, 2009 |
| 7591699 |
Method of manufacturing light-emitting element including the emission layer and the carrier transfer layer |
Sep. 22, 2009 |
| 7582932 |
Silicon carbide semiconductor device and method for manufacturing the same |
Sep. 1, 2009 |
| 7579626 |
Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure device |
Aug. 25, 2009 |
| 7569425 |
Method for manufacturing thermal interface material with carbon nanotubes |
Aug. 4, 2009 |
| 7569496 |
Method for manufacturing SiC semiconductor device |
Aug. 4, 2009 |
| 7569900 |
Silicon carbide high breakdown voltage semiconductor device |
Aug. 4, 2009 |
| 7564062 |
Electrode for p-type SiC |
Jul. 21, 2009 |
| 7557378 |
Boron aluminum nitride diamond heterostructure |
Jul. 7, 2009 |
| 7557377 |
Semiconductor device having thin film transistor |
Jul. 7, 2009 |
| 7553693 |
Method for making a field effect transistor with diamond-like carbon channel and resulting transistor |
Jun. 30, 2009 |
| 7544249 |
Large-diameter SiC wafer and manufacturing method thereof |
Jun. 9, 2009 |
| 7544970 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
Jun. 9, 2009 |
| 7538352 |
Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same |
May. 26, 2009 |
| 7538353 |
Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures |
May. 26, 2009 |
| 7535025 |
Structure and manufacturing method for a silicon carbide semiconductor device |
May. 19, 2009 |
| 7531840 |
Light emitting diode with metal coupling structure |
May. 12, 2009 |
| 7528413 |
Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it |
May. 5, 2009 |
| 7528424 |
Integrated circuitry |
May. 5, 2009 |
| 7525129 |
Organic light-emitting display |
Apr. 28, 2009 |
| 7508045 |
SiC Schottky barrier semiconductor device |
Mar. 24, 2009 |
| 7508000 |
Method of fabricating self-aligned silicon carbide semiconductor devices |
Mar. 24, 2009 |
| 7507999 |
Semiconductor device and method for manufacturing same |
Mar. 24, 2009 |
| 7495249 |
Radiation-emitting semiconducting body with confinement layer |
Feb. 24, 2009 |
| 7488973 |
High-heat-resistant semiconductor device |
Feb. 10, 2009 |
| 7488984 |
Doping of SiC structures and methods associated with same |
Feb. 10, 2009 |
| 7485895 |
Silicon carbide semiconductor device |
Feb. 3, 2009 |
| 7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
Jan. 27, 2009 |
| 7482068 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Jan. 27, 2009 |
| 7473930 |
Use of patterned CNT arrays for display purposes |
Jan. 6, 2009 |
| 7473929 |
Semiconductor device and method for fabricating the same |
Jan. 6, 2009 |
| 7470930 |
Silicon carbide semiconductor device |
Dec. 30, 2008 |
| 7470967 |
Self-aligned silicon carbide semiconductor devices and methods of making the same |
Dec. 30, 2008 |
| 7466019 |
Rectangular semi-conducting support for microelectronics and method for making same |
Dec. 16, 2008 |
| 7462886 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
Dec. 9, 2008 |
| 7459763 |
Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material |
Dec. 2, 2008 |
| 7439563 |
High-breakdown-voltage semiconductor device |
Oct. 21, 2008 |
| 7435993 |
High temperature, high voltage SiC void-less electronic package |
Oct. 14, 2008 |
| 7432534 |
III-nitride semiconductor light emitting device |
Oct. 7, 2008 |
| 7432532 |
Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat |
Oct. 7, 2008 |
| 7432148 |
Shallow trench isolation by atomic-level silicon reconstruction |
Oct. 7, 2008 |
| 7417255 |
Methods of forming a high conductivity diamond film and structures formed thereby |
Aug. 26, 2008 |
| 7414268 |
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
Aug. 19, 2008 |
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