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Class Information
Number: 257/77
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas > Diamond or silicon carbide
Description: Subject matter wherein the specified wide band gap material is diamond or silicon carbide.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459763 |
Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material |
Dec. 2, 2008 |
| 7439563 |
High-breakdown-voltage semiconductor device |
Oct. 21, 2008 |
| 7435993 |
High temperature, high voltage SiC void-less electronic package |
Oct. 14, 2008 |
| 7432532 |
Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat |
Oct. 7, 2008 |
| 7432148 |
Shallow trench isolation by atomic-level silicon reconstruction |
Oct. 7, 2008 |
| 7432534 |
III-nitride semiconductor light emitting device |
Oct. 7, 2008 |
| 7417255 |
Methods of forming a high conductivity diamond film and structures formed thereby |
Aug. 26, 2008 |
| 7414268 |
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
Aug. 19, 2008 |
| 7410923 |
SiC material, semiconductor device fabricating system and SiC material forming method |
Aug. 12, 2008 |
| 7411219 |
Uniform contact |
Aug. 12, 2008 |
| 7411218 |
Method and device with durable contact on silicon carbide |
Aug. 12, 2008 |
| 7407837 |
Method of manufacturing silicon carbide semiconductor device |
Aug. 5, 2008 |
| 7405422 |
Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD |
Jul. 29, 2008 |
| 7405430 |
Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
Jul. 29, 2008 |
| 7399692 |
III-nitride semiconductor fabrication |
Jul. 15, 2008 |
| 7394103 |
All diamond self-aligned thin film transistor |
Jul. 1, 2008 |
| 7391057 |
High voltage silicon carbide devices having bi-directional blocking capabilities |
Jun. 24, 2008 |
| 7391058 |
Semiconductor devices and methods of making same |
Jun. 24, 2008 |
| 7381992 |
Silicon carbide power devices with self-aligned source and well regions |
Jun. 3, 2008 |
| 7381993 |
High-breakdown-voltage insulated gate semiconductor device |
Jun. 3, 2008 |
| 7378325 |
Semiconductor device and manufacturing method thereof |
May. 27, 2008 |
| 7374609 |
Optically variable pigments having an asymmetrical layer structure |
May. 20, 2008 |
| 7375377 |
Ingan-based light-emitting diode chip and a method for the production thereof |
May. 20, 2008 |
| 7372087 |
Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage |
May. 13, 2008 |
| 7368763 |
Semiconductor device and manufacturing method thereof |
May. 6, 2008 |
| 7365363 |
Silicon carbide semiconductor device and method for manufacturing the same |
Apr. 29, 2008 |
| 7355207 |
Silicon carbide semiconductor device and method for manufacturing the same |
Apr. 8, 2008 |
| RE40163 |
Semiconductor light-emitting element |
Mar. 25, 2008 |
| 7345309 |
SiC metal semiconductor field-effect transistor |
Mar. 18, 2008 |
| 7345310 |
Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof |
Mar. 18, 2008 |
| 7339776 |
Silicon carbide diode voltage limiter |
Mar. 4, 2008 |
| 7335929 |
Transistor with a strained region and method of manufacture |
Feb. 26, 2008 |
| 7326962 |
Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
Feb. 5, 2008 |
| 7312491 |
Charge trapping semiconductor memory element with improved trapping dielectric |
Dec. 25, 2007 |
| 7307313 |
Semiconductor device including a vertical field effect transistor, having trenches, and a diode |
Dec. 11, 2007 |
| 7301173 |
Group III-nitride light emitting device |
Nov. 27, 2007 |
| 7297626 |
Process for nickel silicide Ohmic contacts to n-SiC |
Nov. 20, 2007 |
| 7294860 |
Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same |
Nov. 13, 2007 |
| 7294858 |
Semiconductor device and method of manufacturing the same |
Nov. 13, 2007 |
| 7294859 |
Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
Nov. 13, 2007 |
| 7282739 |
Silicon carbide semiconductor device |
Oct. 16, 2007 |
| 7274025 |
Detector for detecting particle beams and method for the production thereof |
Sep. 25, 2007 |
| 7274040 |
Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
Sep. 25, 2007 |
| 7271416 |
Strain compensated semiconductor structures |
Sep. 18, 2007 |
| 7268361 |
Electron emission device |
Sep. 11, 2007 |
| 7265388 |
Semiconductor device |
Sep. 4, 2007 |
| 7262434 |
Semiconductor device with a silicon carbide substrate and ohmic metal layer |
Aug. 28, 2007 |
| 7256425 |
Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof |
Aug. 14, 2007 |
| 7253442 |
Thermal interface material with carbon nanotubes |
Aug. 7, 2007 |
| 7247513 |
Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
Jul. 24, 2007 |
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