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Class Information
Number: 257/769
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Refractory or platinum group metal or alloy or silicide thereof > Platinum group metal or silicide thereof
Description: Subject matter wherein the specified contact or lead material is a platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os) or iridium (Ir)) or a silicide i.e., a binary compound of silicon, usually with a more electropositive element or radical, thereof.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8618677 Wirebonded semiconductor package Dec. 31, 2013
8614106 Liner-free tungsten contact Dec. 24, 2013
8614107 Liner-free tungsten contact Dec. 24, 2013
8610280 Platinum-containing constructions, and methods of forming platinum-containing constructions Dec. 17, 2013
8598705 Composite substrate for a semiconductor chip Dec. 3, 2013
8545998 Electroless deposition of platinum on copper Oct. 1, 2013
8456011 Method to control metal semiconductor micro-structure Jun. 4, 2013
8450204 Structure and process for metallization in high aspect ratio features May. 28, 2013
8426971 Top tri-metal system for silicon power semiconductor devices Apr. 23, 2013
8395261 Semiconductor device Mar. 12, 2013
8378448 Chip inductor with frequency dependent inductance Feb. 19, 2013
8378490 Semiconductor apparatus including a metal alloy between a first contact and a second contact Feb. 19, 2013
8344438 Electrode of an integrated circuit Jan. 1, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8329569 Deposition of ruthenium or ruthenium dioxide Dec. 11, 2012
8304873 Manufacturing method for display device and display device Nov. 6, 2012
8232647 Structure and process for metallization in high aspect ratio features Jul. 31, 2012
8026606 Interconnect layers without electromigration Sep. 27, 2011
8022482 Device configuration of asymmetrical DMOSFET with schottky barrier source Sep. 20, 2011
8013446 Nitrogen-containing metal cap for interconnect structures Sep. 6, 2011
7956445 Packaged integrated circuit having gold removed from a lead frame Jun. 7, 2011
7872328 Capacitor electrode that contains oxygen and nitrogen Jan. 18, 2011
7872274 n-Electrode for III group nitride based compound semiconductor element Jan. 18, 2011
7834461 Semiconductor apparatus Nov. 16, 2010
7812425 Semiconductor device with lower capacitor electrode that includes islands of conductive oxide films arranged on a noble metal film Oct. 12, 2010
7709961 Implantable microelectronic device and method of manufacture May. 4, 2010
7701062 Semiconductor device and method for producing the same Apr. 20, 2010
7692303 Semiconductor device and manufacturing method thereof Apr. 6, 2010
7649263 Semiconductor device Jan. 19, 2010
7626264 Substrate for device bonding and method for manufacturing same Dec. 1, 2009
7618890 Methods for forming conductive structures and structures regarding same Nov. 17, 2009
7573133 Interconnect structures and methods for their fabrication Aug. 11, 2009
7541284 Method of depositing Ru films having high density Jun. 2, 2009
7448395 Process method to facilitate silicidation Nov. 11, 2008
7449782 Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby Nov. 11, 2008
7436067 Methods for forming conductive structures and structures regarding same Oct. 14, 2008
7400042 Substrate with adhesive bonding metallization with diffusion barrier Jul. 15, 2008
7372152 Copper interconnect systems May. 13, 2008
7319270 Multi-layer electrode and method of forming the same Jan. 15, 2008
7256501 Semiconductor device and manufacturing method of the same Aug. 14, 2007
7244973 Field-effect semiconductor device and method for making the same Jul. 17, 2007
7208414 Method for enhanced uni-directional diffusion of metal and subsequent silicide formation Apr. 24, 2007
7115997 Seedless wirebond pad plating Oct. 3, 2006
7081676 Structure for controlling the interface roughness of cobalt disilicide Jul. 25, 2006
7053462 Planarization of metal container structures May. 30, 2006
7038306 Semiconductor integrated circuit device and method of manufacturing the same May. 2, 2006
7030493 Semiconductor device having layered interconnect structure with a copper or platinum conducting film and a neighboring film Apr. 18, 2006
7026714 Copper interconnect systems which use conductive, metal-based cap layers Apr. 11, 2006
7012312 Semiconductor device with multilayer conductive structure formed on a semiconductor substrate Mar. 14, 2006
7009279 Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof Mar. 7, 2006

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