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Class Information
Number: 257/769
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Refractory or platinum group metal or alloy or silicide thereof > Platinum group metal or silicide thereof
Description: Subject matter wherein the specified contact or lead material is a platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os) or iridium (Ir)) or a silicide i.e., a binary compound of silicon, usually with a more electropositive element or radical, thereof.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449782 |
Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby |
Nov. 11, 2008 |
| 7448395 |
Process method to facilitate silicidation |
Nov. 11, 2008 |
| 7436067 |
Methods for forming conductive structures and structures regarding same |
Oct. 14, 2008 |
| 7400042 |
Substrate with adhesive bonding metallization with diffusion barrier |
Jul. 15, 2008 |
| 7372152 |
Copper interconnect systems |
May. 13, 2008 |
| 7319270 |
Multi-layer electrode and method of forming the same |
Jan. 15, 2008 |
| 7256501 |
Semiconductor device and manufacturing method of the same |
Aug. 14, 2007 |
| 7244973 |
Field-effect semiconductor device and method for making the same |
Jul. 17, 2007 |
| 7208414 |
Method for enhanced uni-directional diffusion of metal and subsequent silicide formation |
Apr. 24, 2007 |
| 7115997 |
Seedless wirebond pad plating |
Oct. 3, 2006 |
| 7081676 |
Structure for controlling the interface roughness of cobalt disilicide |
Jul. 25, 2006 |
| 7053462 |
Planarization of metal container structures |
May. 30, 2006 |
| 7038306 |
Semiconductor integrated circuit device and method of manufacturing the same |
May. 2, 2006 |
| 7030493 |
Semiconductor device having layered interconnect structure with a copper or platinum conducting film and a neighboring film |
Apr. 18, 2006 |
| 7026714 |
Copper interconnect systems which use conductive, metal-based cap layers |
Apr. 11, 2006 |
| 7012312 |
Semiconductor device with multilayer conductive structure formed on a semiconductor substrate |
Mar. 14, 2006 |
| 7009279 |
Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof |
Mar. 7, 2006 |
| 6998714 |
Selectively coating bond pads |
Feb. 14, 2006 |
| 6917112 |
Conductive semiconductor structures containing metal oxide regions |
Jul. 12, 2005 |
| 6914336 |
Semiconductor device structure and method for manufacturing the same |
Jul. 5, 2005 |
| 6906417 |
Ball grid array utilizing solder balls having a core material covered by a metal layer |
Jun. 14, 2005 |
| 6870203 |
Field-effect semiconductor device and method for making the same |
Mar. 22, 2005 |
| 6867130 |
Enhanced silicidation of polysilicon gate electrodes |
Mar. 15, 2005 |
| 6822307 |
Semiconductor triode device having a compound-semiconductor channel layer |
Nov. 23, 2004 |
| 6806573 |
Low angle, low energy physical vapor deposition of alloys |
Oct. 19, 2004 |
| 6787833 |
Integrated circuit having a barrier structure |
Sep. 7, 2004 |
| 6756678 |
Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby |
Jun. 29, 2004 |
| 6747343 |
Aluminum leadframes with two nickel layers |
Jun. 8, 2004 |
| 6703291 |
Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions |
Mar. 9, 2004 |
| 6690055 |
Devices containing platinum-rhodium layers and methods |
Feb. 10, 2004 |
| 6653737 |
Interconnection structure and method for fabricating same |
Nov. 25, 2003 |
| 6639316 |
Electrode having substrate and surface electrode components for a semiconductor device |
Oct. 28, 2003 |
| 6627964 |
Gas sensor |
Sep. 30, 2003 |
| 6624514 |
Semiconductor device and manufacturing method thereof |
Sep. 23, 2003 |
| 6624513 |
Semiconductor device with multilayer conductive structure formed on a semiconductor substrate |
Sep. 23, 2003 |
| 6573599 |
Electrical contact for compound semiconductor device and method for forming same |
Jun. 3, 2003 |
| 6570257 |
IMD film composition for dual damascene process |
May. 27, 2003 |
| 6563202 |
Lead frame, manufacturing method of a lead frame, semiconductor device, assembling method of a semiconductor device, and electronic apparatus |
May. 13, 2003 |
| 6534863 |
Common ball-limiting metallurgy for I/O sites |
Mar. 18, 2003 |
| 6534871 |
Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same |
Mar. 18, 2003 |
| 6518647 |
Plated aluminum leadframes for semiconductor devices, including two nickel layers, and method of fabrication |
Feb. 11, 2003 |
| 6512299 |
Semiconductor device and a manufacturing process therefor |
Jan. 28, 2003 |
| 6507123 |
Nickel silicide process using UDOX to prevent silicide shorting |
Jan. 14, 2003 |
| 6483194 |
Semiconductor device having capacitor and method thereof |
Nov. 19, 2002 |
| 6455938 |
Integrated circuit interconnect shunt layer |
Sep. 24, 2002 |
| 6448648 |
Metalization of electronic semiconductor devices |
Sep. 10, 2002 |
| 6437423 |
Method for fabricating semiconductor components with high aspect ratio features |
Aug. 20, 2002 |
| 6404058 |
Semiconductor device having interconnection implemented by refractory metal nitride layer and refractory metal silicide layer and process of fabrication thereof |
Jun. 11, 2002 |
| 6400025 |
Highly purified titanium material, method for preparation of it and sputtering target using it |
Jun. 4, 2002 |
| 6344663 |
Silicon carbide CMOS devices |
Feb. 5, 2002 |
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