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Class Information
Number: 257/768
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Refractory or platinum group metal or alloy or silicide thereof
Description: Subject matter wherein the specified contact or lead material is a refractory metal or a platinum group metal, i.e., a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements or a silicide (i.e., a binary compound of silicon), usually with a more electropositive element or radical, thereof.

Sub-classes under this class:

Class Number Class Name Patents
257/770 Molybdenum, tungsten, or titanium or their silicides 364
257/769 Platinum group metal or silicide thereof 212

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8648464 Semiconductor device and manufacturing method thereof Feb. 11, 2014
8648444 Wafer scribe line structure for improving IC reliability Feb. 11, 2014
8643119 Substantially L-shaped silicide for contact Feb. 4, 2014
8637937 Through silicon via for use in integrated circuit chips Jan. 28, 2014
8581404 Structure of gold bumps and gold conductors on one IC die and methods of manufacturing the structures Nov. 12, 2013
8501623 Method of forming a semiconductor device having a metal silicide and alloy layers as electrode Aug. 6, 2013
8497580 Noble metal cap for interconnect structures Jul. 30, 2013
8466555 Gold-free ohmic contacts Jun. 18, 2013
8450204 Structure and process for metallization in high aspect ratio features May. 28, 2013
8378490 Semiconductor apparatus including a metal alloy between a first contact and a second contact Feb. 19, 2013
8349730 Transitional interface between metal and dielectric in interconnect structures Jan. 8, 2013
8344438 Electrode of an integrated circuit Jan. 1, 2013
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8247836 Nickel tin bonding system with barrier layer for semiconductor wafers and devices Aug. 21, 2012
8248810 Electronic device Aug. 21, 2012
8237167 Semiconductor device and manufacturing method thereof Aug. 7, 2012
8232647 Structure and process for metallization in high aspect ratio features Jul. 31, 2012
8159068 Semiconductor device Apr. 17, 2012
8154130 Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby Apr. 10, 2012
8129844 Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices Mar. 6, 2012
8114720 Semiconductor device and manufacturing method thereof Feb. 14, 2012
8115264 Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same Feb. 14, 2012
8101871 Aluminum bond pads with enhanced wire bond stability Jan. 24, 2012
8076781 Semiconductor device and manufacturing method of the same Dec. 13, 2011
8072076 Bond pad structures and integrated circuit chip having the same Dec. 6, 2011
8044514 Semiconductor integrated circuit Oct. 25, 2011
8030777 Protection of Cu damascene interconnects by formation of a self-aligned buffer layer Oct. 4, 2011
8022482 Device configuration of asymmetrical DMOSFET with schottky barrier source Sep. 20, 2011
8013446 Nitrogen-containing metal cap for interconnect structures Sep. 6, 2011
7998858 Vertical interconnect structure, memory device and associated production method Aug. 16, 2011
7985668 Method for forming a metal silicide having a lower potential for containing material defects Jul. 26, 2011
7960832 Integrated circuit arrangement with layer stack Jun. 14, 2011
7955908 Thin film transistor array panel and manufacturing method thereof Jun. 7, 2011
7928571 Device having dual etch stop liner and reformed silicide layer and related methods Apr. 19, 2011
7915735 Selective metal deposition over dielectric layers Mar. 29, 2011
7851916 Strain silicon wafer with a crystal orientation (100) in flip chip BGA package Dec. 14, 2010
7847410 Interconnect of group III-V semiconductor device and fabrication method for making the same Dec. 7, 2010
7830010 Surface treatment for selective metal cap applications Nov. 9, 2010
7825516 Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures Nov. 2, 2010
7807538 Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers Oct. 5, 2010
7807571 Semiconductor device and methods of forming the same Oct. 5, 2010
7799682 Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor Sep. 21, 2010
7786837 Semiconductor power device having a stacked discrete inductor structure Aug. 31, 2010
7777344 Transitional interface between metal and dielectric in interconnect structures Aug. 17, 2010
7750471 Metal and alloy silicides on a single silicon wafer Jul. 6, 2010
7732331 Copper interconnect structure having stuffed diffusion barrier Jun. 8, 2010
7719044 Platinum-containing integrated circuits and capacitor constructions May. 18, 2010
7692301 Stitched micro-via to enhance adhesion and mechanical strength Apr. 6, 2010
7655567 Methods for improving uniformity and resistivity of thin tungsten films Feb. 2, 2010

1 2 3 4 5 6 7 8 9

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