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Class Information
Number: 257/768
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Refractory or platinum group metal or alloy or silicide thereof
Description: Subject matter wherein the specified contact or lead material is a refractory metal or a platinum group metal, i.e., a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements or a silicide (i.e., a binary compound of silicon), usually with a more electropositive element or radical, thereof.


Sub-classes under this class:

Class Number Class Name Patents
257/770 Molybdenum, tungsten, or titanium or their silicides 311
257/769 Platinum group metal or silicide thereof 179


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7449782 Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby Nov. 11, 2008
7436067 Methods for forming conductive structures and structures regarding same Oct. 14, 2008
7432202 Method of substrate manufacture that decreases the package resistance Oct. 7, 2008
7429781 Memory package Sep. 30, 2008
7422707 Highly conductive composition for wafer coating Sep. 9, 2008
7420227 Cu-metalized compound semiconductor device Sep. 2, 2008
7420998 Semiconductor laser device Sep. 2, 2008
7414291 Semiconductor device and method of manufacturing the same Aug. 19, 2008
7399702 Methods of forming silicide Jul. 15, 2008
7385287 Preventing damage to low-k materials during resist stripping Jun. 10, 2008
7368823 Semiconductor device and method of manufacturing the same May. 6, 2008
7348265 Semiconductor device having a silicided gate electrode and method of manufacture therefor Mar. 25, 2008
7332435 Silicide structure for ultra-shallow junction for MOS devices Feb. 19, 2008
7323783 Electrode, method for producing same and semiconductor device using same Jan. 29, 2008
7303988 Methods of manufacturing multi-level metal lines in semiconductor devices Dec. 4, 2007
7291920 Semiconductor structures Nov. 6, 2007
7256498 Resistance-reduced semiconductor device and methods for fabricating the same Aug. 14, 2007
7244996 Structure of a field effect transistor having metallic silicide and manufacturing method thereof Jul. 17, 2007
7230304 Electric contacts and method of manufacturing thereof, and vacuum interrupter and vacuum circuit breaker using thereof Jun. 12, 2007
7180109 Field effect transistor and method of fabrication Feb. 20, 2007
7161246 Interconnect alloys and methods and apparatus using same Jan. 9, 2007
7157798 Selective refractory metal and nitride capping Jan. 2, 2007
7115997 Seedless wirebond pad plating Oct. 3, 2006
7098503 Circuitry and capacitors comprising roughened platinum layers Aug. 29, 2006
7078733 Aluminum alloyed layered structure for an optical device Jul. 18, 2006
7038318 Compound structure for reduced contact resistance May. 2, 2006
7009279 Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof Mar. 7, 2006
6998714 Selectively coating bond pads Feb. 14, 2006
6998649 Semiconductor light-emitting device Feb. 14, 2006
6989599 Semiconductor device with layered interconnect structure Jan. 24, 2006
6949827 Semiconductor device with novel film composition Sep. 27, 2005
6919636 Interconnects with a dielectric sealant layer Jul. 19, 2005
6917112 Conductive semiconductor structures containing metal oxide regions Jul. 12, 2005
6917111 Semiconductor device having cell plugs Jul. 12, 2005
6906420 Semiconductor device Jun. 14, 2005
6906370 Semiconductor component having a material reinforced contact area Jun. 14, 2005
6896976 Tin antimony solder for MOSFET with TiNiAg back metal May. 24, 2005
6891274 Under-bump-metallurgy layer for improving adhesion May. 10, 2005
6882052 Plasma enhanced liner Apr. 19, 2005
6873020 High/low work function metal alloys for integrated circuit electrodes Mar. 29, 2005
6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Mar. 29, 2005
6867130 Enhanced silicidation of polysilicon gate electrodes Mar. 15, 2005
6853081 Method for fabricating semiconductor integrated circuit Feb. 8, 2005
6841879 Semiconductor device Jan. 11, 2005
6835980 Semiconductor device with novel film composition Dec. 28, 2004
6833625 Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect Dec. 21, 2004
6830820 Chemical vapor deposition of titanium Dec. 14, 2004
6822307 Semiconductor triode device having a compound-semiconductor channel layer Nov. 23, 2004
6812569 Semiconductor device using bumps, method for fabricating same, and method for forming bumps Nov. 2, 2004
6806573 Low angle, low energy physical vapor deposition of alloys Oct. 19, 2004

1 2 3 4 5 6 7 8


 
 
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