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Class Information
Number: 257/764
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > At least one layer of molybdenum, titanium, or tungsten > Alloy containing molybdenum, titanium, or tungsten
Description: Subject matter wherein at least one layer containing molybdenum, titanium, or tungsten contains an alloy thereof.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4862243 |
Scalable fuse link element |
Aug. 29, 1989 |
| 4845050 |
Method of making mo/tiw or w/tiw ohmic contacts to silicon |
Jul. 4, 1989 |
| 4840302 |
Chromium-titanium alloy |
Jun. 20, 1989 |
| 4823182 |
Semiconductor device with a diffusion barrier contact of a refractory metal nitride and either carbon or boron |
Apr. 18, 1989 |
| 4816424 |
Method of producing semiconductor device having multilayer conductive lines |
Mar. 28, 1989 |
| 4807016 |
Dry etch of phosphosilicate glass with selectivity to undoped oxide |
Feb. 21, 1989 |
| 4795722 |
Method for planarization of a semiconductor device prior to metallization |
Jan. 3, 1989 |
| 4796075 |
Fusible link structure for integrated circuits |
Jan. 3, 1989 |
| 4787958 |
Method of chemically etching TiW and/or TiWN |
Nov. 29, 1988 |
| 4782380 |
Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
Nov. 1, 1988 |
| 4782032 |
Method of making self-aligned GaAs devices having TiWN.sub.x gate/interconnect |
Nov. 1, 1988 |
| 4753851 |
Multiple layer, tungsten/titanium/titanium nitride adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection |
Jun. 28, 1988 |
| 4748490 |
Deep polysilicon emitter antifuse memory cell |
May. 31, 1988 |
| 4740485 |
Method for forming a fuse |
Apr. 26, 1988 |
| 4672420 |
Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking |
Jun. 9, 1987 |
| 4609936 |
Semiconductor chip with direct-bonded external leadframe |
Sep. 2, 1986 |
| 4577396 |
Method of forming electrical contact to a semiconductor substrate via a metallic silicide or silicon alloy layer formed in the substrate |
Mar. 25, 1986 |
| 4570328 |
Method of producing titanium nitride MOS device gate electrode |
Feb. 18, 1986 |
| 4561009 |
Semiconductor device |
Dec. 24, 1985 |
| 4491860 |
TiW.sub.2 N Fusible links in semiconductor integrated circuits |
Jan. 1, 1985 |
| 4486946 |
Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing |
Dec. 11, 1984 |
| 4394678 |
Elevated edge-protected bonding pedestals for semiconductor devices |
Jul. 19, 1983 |
| 4330343 |
Refractory passivated ion-implanted GaAs ohmic contacts |
May. 18, 1982 |
| 4267012 |
Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer |
May. 12, 1981 |
| 4231058 |
Tungsten-titanium-chromium/gold semiconductor metallization |
Oct. 28, 1980 |
| 4206472 |
Thin film structures and method for fabricating same |
Jun. 3, 1980 |
| 4124455 |
Method of making solar cell with multiple-metal contacts |
Nov. 7, 1978 |
| 4097889 |
Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z |
Jun. 27, 1978 |
| 4091406 |
Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z |
May. 23, 1978 |
| 4091407 |
Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z |
May. 23, 1978 |
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