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Class Information
Number: 257/761
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum
Description: Subject matter wherein a layered electrical contact or lead has at least one layer which contains vanadium (V), hafnium (Hf), niobium (Nb), zirconium (Zr), or tantalum (Ta).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459788 |
Ohmic electrode structure of nitride semiconductor device |
Dec. 2, 2008 |
| 7456490 |
Sealing porous dielectrics with silane coupling reagents |
Nov. 25, 2008 |
| 7456468 |
Semiconductor device including high-k insulating layer and method of manufacturing the same |
Nov. 25, 2008 |
| 7435670 |
Bit line barrier metal layer for semiconductor device and process for preparing the same |
Oct. 14, 2008 |
| 7402883 |
Back end of the line structures with liner and noble metal layer |
Jul. 22, 2008 |
| 7400042 |
Substrate with adhesive bonding metallization with diffusion barrier |
Jul. 15, 2008 |
| 7319270 |
Multi-layer electrode and method of forming the same |
Jan. 15, 2008 |
| RE39932 |
Semiconductor interconnect formed over an insulation and having moisture resistant material |
Dec. 4, 2007 |
| 7300869 |
Integrated barrier and seed layer for copper interconnect technology |
Nov. 27, 2007 |
| 7297630 |
Methods of fabricating via hole and trench |
Nov. 20, 2007 |
| 7279732 |
Enhanced atomic layer deposition |
Oct. 9, 2007 |
| 7276801 |
Designs and methods for conductive bumps |
Oct. 2, 2007 |
| 7262473 |
Metal to polysilicon contact in oxygen environment |
Aug. 28, 2007 |
| 7256500 |
Semiconductor device using metal nitride as insulating film |
Aug. 14, 2007 |
| 7253501 |
High performance metallization cap layer |
Aug. 7, 2007 |
| 7253519 |
Chip packaging structure having redistribution layer with recess |
Aug. 7, 2007 |
| 7253522 |
Integrated capacitor for RF applications with Ta adhesion layer |
Aug. 7, 2007 |
| 7250679 |
Semiconductor device and method for fabricating the same |
Jul. 31, 2007 |
| 7230337 |
Semiconductor device including ladder-shaped siloxane hydride and method for manufacturing same |
Jun. 12, 2007 |
| 7193327 |
Barrier structure for semiconductor devices |
Mar. 20, 2007 |
| 7187085 |
Semiconductor device including dual damascene interconnections |
Mar. 6, 2007 |
| 7183601 |
Semiconductor device and method for manufacturing thereof |
Feb. 27, 2007 |
| 7164207 |
Wiring structure for semiconductor device |
Jan. 16, 2007 |
| 7145241 |
Semiconductor device having a multilayer interconnection structure and fabrication process thereof |
Dec. 5, 2006 |
| 7145245 |
Low-k dielectric film with good mechanical strength that varies in local porosity depending on location on substrate--therein |
Dec. 5, 2006 |
| 7135707 |
Semiconductor device having insulated gate electrode |
Nov. 14, 2006 |
| 7135775 |
Enhancement of an interconnect |
Nov. 14, 2006 |
| 7129534 |
Magneto-resistive memory and method of manufacturing the same |
Oct. 31, 2006 |
| 7126220 |
Miniaturized contact spring |
Oct. 24, 2006 |
| 7122901 |
Semiconductor device |
Oct. 17, 2006 |
| 7119443 |
Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element |
Oct. 10, 2006 |
| 7091609 |
Semiconductor devices including an alloy layer and a wetting layer on an interlayer dielectric |
Aug. 15, 2006 |
| 7091568 |
Electronic device including dielectric layer, and a process for forming the electronic device |
Aug. 15, 2006 |
| 7087997 |
Copper to aluminum interlayer interconnect using stud and via liner |
Aug. 8, 2006 |
| 7078810 |
Semiconductor device and fabrication method thereof |
Jul. 18, 2006 |
| 7071564 |
Composite tantalum capped inlaid copper with reduced electromigration and reduced stress migration |
Jul. 4, 2006 |
| 7071562 |
Interconnects with improved barrier layer adhesion |
Jul. 4, 2006 |
| 7067917 |
Gradient barrier layer for copper back-end-of-line technology |
Jun. 27, 2006 |
| 7061113 |
Semiconductor apparatus, led head, and image forming apparatus |
Jun. 13, 2006 |
| 7057286 |
Semiconductor device and method of manufacturing the same |
Jun. 6, 2006 |
| 7053455 |
Semiconductor device and method of manufacturing semiconductor device |
May. 30, 2006 |
| 7049679 |
Capacitor and production method therefor |
May. 23, 2006 |
| 7042093 |
Semiconductor device using metal nitride as insulating film |
May. 9, 2006 |
| 7030450 |
Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor |
Apr. 18, 2006 |
| 7026721 |
Method of improving copper pad adhesion |
Apr. 11, 2006 |
| 7015096 |
Bimetallic oxide compositions for gate dielectrics |
Mar. 21, 2006 |
| 7002252 |
Wiring structure of a semiconductor integrated circuit and a method of forming the wiring structure |
Feb. 21, 2006 |
| 6995475 |
I/C chip suitable for wire bonding |
Feb. 7, 2006 |
| 6984891 |
Methods for making copper and other metal interconnections in integrated circuits |
Jan. 10, 2006 |
| 6975033 |
Semiconductor device and method for manufacturing the same |
Dec. 13, 2005 |
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