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Class Information
Number: 257/760
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Combined with electrical contact or lead > Of specified material other than unalloyed aluminum > Layered > Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) > Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride)
Description: Subject matter wherein there is at least one separating insulator layer between different metal layers, which separating insulator layer is itself made up of plural sublayers, or which separating insulator layer is a composite such as a mixture of silicon oxide and silicon nitride.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459389 |
Method of forming a semiconductor device having air gaps and the structure so formed |
Dec. 2, 2008 |
| 7459761 |
High performance system-on-chip using post passivation process |
Dec. 2, 2008 |
| 7452802 |
Method of forming metal wiring for high voltage element |
Nov. 18, 2008 |
| 7453159 |
Semiconductor chip having bond pads |
Nov. 18, 2008 |
| 7446395 |
Device having dual etch stop liner and protective layer |
Nov. 4, 2008 |
| 7446418 |
Semiconductor device for preventing defective filling of interconnection and cracking of insulating film |
Nov. 4, 2008 |
| 7446417 |
Semiconductor integrated circuit device and fabrication method thereof |
Nov. 4, 2008 |
| 7443031 |
Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluation |
Oct. 28, 2008 |
| 7429793 |
Semiconductor device having an electronic circuit disposed therein |
Sep. 30, 2008 |
| 7425735 |
Multi-layer phase-changeable memory devices |
Sep. 16, 2008 |
| 7425764 |
Top layers of metal for high performance IC's |
Sep. 16, 2008 |
| 7423346 |
Post passivation interconnection process and structures |
Sep. 9, 2008 |
| 7423300 |
Single-mask phase change memory element |
Sep. 9, 2008 |
| 7420275 |
Boron-doped SIC copper diffusion barrier films |
Sep. 2, 2008 |
| 7416996 |
Method of making circuitized substrate |
Aug. 26, 2008 |
| 7414315 |
Damascene structure with high moisture-resistant oxide and method for making the same |
Aug. 19, 2008 |
| 7411301 |
Semiconductor integrated circuit device |
Aug. 12, 2008 |
| 7408260 |
Microelectronic assemblies having compliant layers |
Aug. 5, 2008 |
| 7405482 |
High-k dielectric film, method of forming the same and related semiconductor device |
Jul. 29, 2008 |
| 7402846 |
Electrostatic discharge (ESD) protection structure and a circuit using the same |
Jul. 22, 2008 |
| 7402513 |
Method for forming interlayer insulation film |
Jul. 22, 2008 |
| 7397135 |
Top layers of metal for high performance IC's |
Jul. 8, 2008 |
| 7394156 |
Semiconductor integrated circuit device and method of producing the same |
Jul. 1, 2008 |
| 7391115 |
Semiconductor device and manufacturing method thereof |
Jun. 24, 2008 |
| 7391114 |
Electrode pad section for external connection |
Jun. 24, 2008 |
| 7388291 |
Semiconductor device and method of fabricating the same |
Jun. 17, 2008 |
| 7388292 |
Top layers of metal for high performance IC's |
Jun. 17, 2008 |
| 7385291 |
Top layers of metal for high performance IC's |
Jun. 10, 2008 |
| 7385241 |
Vertical-type capacitor structure |
Jun. 10, 2008 |
| 7384866 |
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer |
Jun. 10, 2008 |
| 7384865 |
Semiconductor device with a metal line and method of forming the same |
Jun. 10, 2008 |
| 7382058 |
Top layers of metal for high performance IC's |
Jun. 3, 2008 |
| 7378740 |
Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit |
May. 27, 2008 |
| 7372155 |
Top layers of metal for high performance IC's |
May. 13, 2008 |
| 7372163 |
Semiconductor device and production method therefor |
May. 13, 2008 |
| 7372158 |
HDP-based ILD capping layer |
May. 13, 2008 |
| 7372154 |
Semiconductor device |
May. 13, 2008 |
| 7372152 |
Copper interconnect systems |
May. 13, 2008 |
| 7372090 |
Magnetic random access memory device and method of forming the same |
May. 13, 2008 |
| 7372085 |
Top layers of metal for high performance IC's |
May. 13, 2008 |
| 7371678 |
Semiconductor device with a metal line and method of forming the same |
May. 13, 2008 |
| 7372157 |
Semiconductor device including titanium wires and manufacturing method therefor |
May. 13, 2008 |
| 7368779 |
Hemi-spherical structure and method for fabricating the same |
May. 6, 2008 |
| 7361991 |
Closed air gap interconnect structure |
Apr. 22, 2008 |
| 7361992 |
Semiconductor device including interconnects formed by damascene process and manufacturing method thereof |
Apr. 22, 2008 |
| 7361993 |
Terminal pad structures and methods of fabricating same |
Apr. 22, 2008 |
| 7358610 |
Top layers of metal for high performance IC's |
Apr. 15, 2008 |
| 7358170 |
Methods of forming conductive interconnects, and methods of depositing nickel |
Apr. 15, 2008 |
| 7352064 |
Multiple layer resist scheme implementing etch recipe particular to each layer |
Apr. 1, 2008 |
| 7341957 |
Masking structure having multiple layers including amorphous carbon layer |
Mar. 11, 2008 |
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