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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4451838 |
Semiconductor photoelectric conversion device |
May. 29, 1984 |
| 4417262 |
Green light emitting device |
Nov. 22, 1983 |
| 4408217 |
GaN Electroluminescent semiconductor device and method for making the same |
Oct. 4, 1983 |
| 4396929 |
Gallium nitride light-emitting element and method of manufacturing the same |
Aug. 2, 1983 |
| 4364077 |
P.sup.+ N Gallium phosphide photodiodes |
Dec. 14, 1982 |
| 4342879 |
Thin film photovoltaic device |
Aug. 3, 1982 |
| 4297717 |
Semiconductor device |
Oct. 27, 1981 |
| 4287383 |
Cadmium sulfide photovoltaic cell of improved efficiency |
Sep. 1, 1981 |
| 4286842 |
Solid state circuit |
Sep. 1, 1981 |
| 4283590 |
Method for production of solar cells and solar cells produced thereby |
Aug. 11, 1981 |
| 4268842 |
Electroluminescent gallium nitride semiconductor device |
May. 19, 1981 |
| 4264914 |
Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same |
Apr. 28, 1981 |
| 4215577 |
Utilization of diodes as wide range responsive thermometers |
Aug. 5, 1980 |
| 4180423 |
Method of manufacturing red light-emitting gallium phosphide device |
Dec. 25, 1979 |
| 4141756 |
Method of making a gap UV photodiode by multiple ion-implantations |
Feb. 27, 1979 |
| 4139858 |
Solar cell with a gallium nitride electrode |
Feb. 13, 1979 |
| 4128843 |
GaP Directed field UV photodiode |
Dec. 5, 1978 |
| 4107723 |
High bandgap window layer for GaAs solar cells and fabrication process therefor |
Aug. 15, 1978 |
| 4080245 |
Process for manufacturing a gallium phosphide electroluminescent device |
Mar. 21, 1978 |
| 4075654 |
Semiconductor photoelectron emission device |
Feb. 21, 1978 |
| 4063276 |
Semiconductor photoelectron emission device |
Dec. 13, 1977 |
| 4063269 |
Semiconductor photoelectron emission device |
Dec. 13, 1977 |
| 4034396 |
Light sensor having good sensitivity to visible light |
Jul. 5, 1977 |
| 3984263 |
Method of producing defectless epitaxial layer of gallium |
Oct. 5, 1976 |
| 3972060 |
Semiconductor cold electron emission device |
Jul. 27, 1976 |
| 3964940 |
Methods of producing gallium phosphide yellow light emitting diodes |
Jun. 22, 1976 |
| 3934260 |
Red light-emitting gallium phosphide device |
Jan. 20, 1976 |
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