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Class Information
Number: 257/76
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
Description: Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5352909 |
Field effect transistor and method for manufacturing the same |
Oct. 4, 1994 |
| 5349207 |
Silicon carbide wafer bonded to a silicon wafer |
Sep. 20, 1994 |
| 5347147 |
Light emitting diamond device |
Sep. 13, 1994 |
| 5338944 |
Blue light-emitting diode with degenerate junction structure |
Aug. 16, 1994 |
| 5322573 |
InP solar cell with window layer |
Jun. 21, 1994 |
| 5309000 |
Diamond films with heat-resisting ohmic electrodes |
May. 3, 1994 |
| 5300793 |
Hetero crystalline structure and semiconductor device using it |
Apr. 5, 1994 |
| 5274251 |
Semiconductor light emitting element |
Dec. 28, 1993 |
| 5264713 |
Junction field-effect transistor formed in silicon carbide |
Nov. 23, 1993 |
| 5247192 |
Heterojunction bipolar transistor |
Sep. 21, 1993 |
| 5240877 |
Process for manufacturing an ohmic electrode for n-type cubic boron nitride |
Aug. 31, 1993 |
| 5239188 |
Gallium nitride base semiconductor device |
Aug. 24, 1993 |
| 5187560 |
Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same |
Feb. 16, 1993 |
| 5184199 |
Silicon carbide semiconductor device |
Feb. 2, 1993 |
| 5182670 |
Narrow band algan filter |
Jan. 26, 1993 |
| 5173751 |
Semiconductor light emitting device |
Dec. 22, 1992 |
| 5164810 |
Cubic boron nitride bipolar transistor |
Nov. 17, 1992 |
| 5122845 |
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode |
Jun. 16, 1992 |
| 5122844 |
Quantum well structure and semiconductor device using the same |
Jun. 16, 1992 |
| 5117270 |
Photosensor with AU diffused Pb.sub.2 CrO.sub.5 or similar film |
May. 26, 1992 |
| 5117267 |
Semiconductor heterojunction structure |
May. 26, 1992 |
| 5093692 |
Tunnel diode detector for microwave frequency applications |
Mar. 3, 1992 |
| 5091758 |
Semiconductor light-emitting devices |
Feb. 25, 1992 |
| 5089862 |
Monocrystalline three-dimensional integrated circuit |
Feb. 18, 1992 |
| 5055141 |
Enhancement of short-circuit current by use of wide bandgap N-layers in P-I-N amorphous silicon photovoltaic cells |
Oct. 8, 1991 |
| 5006908 |
Epitaxial Wurtzite growth structure for semiconductor light-emitting device |
Apr. 9, 1991 |
| 5005057 |
Semiconductor light-emitting diode and method of manufacturing the same |
Apr. 2, 1991 |
| 4990989 |
Restricted contact planar photodiode |
Feb. 5, 1991 |
| 4987460 |
Light emitting device |
Jan. 22, 1991 |
| 4969025 |
Amorphous silicon photosensor with oxygen doped layer |
Nov. 6, 1990 |
| 4958202 |
Semiconductor light-emitting device and method of manufacturing the same |
Sep. 18, 1990 |
| 4935795 |
Avalanche photodiode with uniform avalanche multiplication |
Jun. 19, 1990 |
| 4906583 |
Making a semiconductor photodetector |
Mar. 6, 1990 |
| 4907043 |
Polycrstalline electroluminescent device with Langmuir-Blodgett film |
Mar. 6, 1990 |
| 4903088 |
Semiconductor laser with large bandgap connection layer |
Feb. 20, 1990 |
| 4889831 |
Method of forming a high temperature stable ohmic contact to a III-V substrate |
Dec. 26, 1989 |
| 4885614 |
Semiconductor device with crystalline silicon-germanium-carbon alloy |
Dec. 5, 1989 |
| 4873556 |
Hetero-junction device |
Oct. 10, 1989 |
| 4819058 |
Semiconductor device having a pn junction |
Apr. 4, 1989 |
| 4794439 |
Rear entry photodiode with three contacts |
Dec. 27, 1988 |
| 4769682 |
Boron doped semiconductor materials and method for producing same |
Sep. 6, 1988 |
| 4722913 |
Doped semiconductor vias to contacts |
Feb. 2, 1988 |
| 4695859 |
Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits |
Sep. 22, 1987 |
| 4675708 |
Semiconductor superlattice structure |
Jun. 23, 1987 |
| 4614961 |
Tunable cut-off UV detector based on the aluminum gallium nitride material system |
Sep. 30, 1986 |
| 4608581 |
Semiconductor light emitter based on gallium nitride and process for manufacture thereof |
Aug. 26, 1986 |
| 4603340 |
Semiconductor device having superlattice structure |
Jul. 29, 1986 |
| 4577209 |
Photodiodes having a hole extending therethrough |
Mar. 18, 1986 |
| 4529996 |
Indium phosphide-boron phosphide heterojunction bipolar transistor |
Jul. 16, 1985 |
| 4523214 |
Solid state image pickup device utilizing microcrystalline and amorphous silicon |
Jun. 11, 1985 |
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